Gate-Induced Fermi Level Tuning in InP Nanowires at Efficiency Close to the Thermal Limit

Storm, Kristian; Nylund, Gustav; Borgström, Magnus T.; Wallentin, Jesper; Fasth, Carina; Thelander, Claes; Samuelson, Lars

doi:10.1021/nl104032s

Cited by 21 publications

(34 citation statements)

References 25 publications

(38 reference statements)

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“…We do not expect significant short-channel effects in our devices, and accordingly, the threshold shift direction is opposite that expected for drain-induced barrier lowering (DIBL). The threshold shift direction is instead indicative of the increased I sd that naturally follows increased V sd at fixed V g , consistent with other nanowire transistors [5,10]. Finally, we comment briefly on the field-effect mobility for our device.…”

Section: Resultssupporting

confidence: 82%

“…This is caused by several key challenges for p-type devices including lower intrinsic carrier mobility and difficulties in growth, doping and fabrication of high quality ohmic contacts and gates. Hence III-V nanowire CMOS typically features p-type transistors far less ideal than their n-type counterparts [5,10,11]. Here we present polymer electrolyte gated Be-doped p + -GaAs NWFETs with near-thermal limit gating that point out a path to filling this significant performance gap.…”

Section: Introductionmentioning

confidence: 99%

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Near-thermal limit gating in heavily doped III-V semiconductor nanowires using polymer electrolytes

Ullah

Carrad

Krogstrup

et al. 2018

Phys. Rev. Materials

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Doping is a common route to reducing nanowire transistor on-resistance but has limits. High doping level gives significant loss in gate performance and ultimately complete gate failure. We show that electrolyte gating remains effective even when the Be doping in our GaAs nanowires is so high that traditional metal-oxide gates fail. In this regime we obtain a combination of subthreshold swing and contact resistance that surpasses the best existing p-type nanowire MOSFETs. Our sub-threshold swing of 75 mV/dec is within 25% of the room-temperature thermal limit and comparable with n-InP and n-GaAs nanowire MOSFETs. Our results open a new path to extending the performance and application of nanowire transistors, and motivate further work on improved solid electrolytes for nanoscale device applications.

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Section: Resultssupporting

confidence: 82%

Section: Introductionmentioning

confidence: 99%

Near-thermal limit gating in heavily doped III-V semiconductor nanowires using polymer electrolytes

Ullah

Carrad

Krogstrup

et al. 2018

Phys. Rev. Materials

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“…Improved electrostatic control can be achieved by using a top gate [35,118] or creating a vertical transistor with a wrap gate [119].…”

Section: Electrical Methodsmentioning

confidence: 99%

Doping of semiconductor nanowires

2011

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9Populärvetenskaplig sammanfattning 11List of papers 15 AbstractIn this thesis, in situ doping during growth of III-V semiconductor nanowires, primarily for photovoltaic applications, is investigated. The nanowires were grown by metalorganic vapor phase epitaxy (MOVPE), with gold seed particles. After growth the nanowires were characterized using various techniques, including photoluminescence, transmission electron microscopy and electrical measurements of contacted nanowires. Different III-V materials were studed, both binary materials such as InP and GaAs, and ternary materials such as Ga x In 1-x P. To achieve p-and n-doping, different precursors were employed.The results show that successful p-and n-doping can be achieved in many materials. The in situ doping is shown to affect the nanowire growth strongly, but differently depending on the combination of material and dopant. The main effects are related to the growth rate and the crystal structure. It is shown that the ndopant H 2 S increases the growth rate and induces wurtzite crystal structure in InP nanowires, while the p-dopant DEZn gives an unchanged growth rate with zinc blende crystal structure. En solcells förmåga att omvandla solljus till elektricitet kallas för verkningsgrad. Idag baseras de flesta solceller på grundämnet kisel, vilket är samma material som är basen för elektroniken i alla datorer. Detta material ger en medelmåttig verkningsgrad för ett medelmåttigt pris. För att göra solceller ännu mer användningsbara utvecklar många forskare och företag nya sorters solceller, som är billigare eller bättre än kiselceller. De mest effektiva solcellerna görs av så kallade III-V ("tre-fem") material, som kan ge ungefär dubbelt så mycket eleffekt som kiselceller. Tyvärr är III-V material dyra, vilket gör dessa solceller olönsamma för de flesta tillämpningar.Ett möjligt sätt att sänka kostnaderna är att göra III-V materialet i form av små, avlånga kristaller som kallas nanotrådar. Dessa nanotrådar är ungefär en tusendel så tjocka som ett hårstrå, vilket betyder att deras diameter är ungefär samma som ljusets våglängd. Mängden III-V material som används kan då minskas på två sätt. Dels kan man använda ett annat, billigare material som bärande substrat, dels behöver man bara täcka ungefär en tiondel av ytan. Nanotrådarna fungerar som små antenner som effektivt fångar in solljuset. I en solcell absorberas ljusenergin av elektroner, som tvingas i en bestämd riktning vilket skapar en elektrisk ström. För att göra detta används så kallad dopning, 13 vilket innebär att man stoppar in kontrollerade mängder av speciella föroreningar i den annars mycket rena kristallen. Med n-dopning skapar man ett överskott av elektroner, och med p-dopning skapar man ett underskott. Kombinerar man ett pdopat och ett n-dopat område får man en p-n övergång, som också kallas en diod. Det är i övergången mellan p-dopning och n-dopning som elektronerna tvingas i en speciell riktning, nämligen mot den n-dopade sidan. För att nanotrådarna ska fungera som solceller måste dä...

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“…We have also demonstrated excellent electrostatic control of charge carriers in wrap-gated intrinsic InP NWs, allowing the Fermi level to be shifted across the entire band gap, inducing both n-type and p-type behavior [3]. By using two gates positioned sequentially along the length of the nanowire and biased with voltages of opposite polarity, we have created an artificial, doping-free p-n junction in which the built-in voltage can be tuned by the applied gate voltages [4].…”

Section: Transparently Wrap-gated Semiconductor Nanowire Arrays For Smentioning

confidence: 98%

Transparently wrap-gated semiconductor nanowire arrays for studies of gate-controlled photoluminescence

Nylund¹,

Storm²,

Torstensson³

et al. 2013

AIP Conference Proceedings

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Gate-Induced Fermi Level Tuning in InP Nanowires at Efficiency Close to the Thermal Limit

Cited by 21 publications

References 25 publications

Near-thermal limit gating in heavily doped III-V semiconductor nanowires using polymer electrolytes

Near-thermal limit gating in heavily doped III-V semiconductor nanowires using polymer electrolytes

Doping of semiconductor nanowires

Transparently wrap-gated semiconductor nanowire arrays for studies of gate-controlled photoluminescence

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