Gate-control efficiency and interface state density evaluated from capacitance-frequency-temperature mapping for GaN-based metal-insulator-semiconductor devices

Abstract

Articles you may be interested inModeling small-signal response of GaN-based metal-insulator-semiconductor high electron mobility transistor gate stack in spill-over regime: Effect of barrier resistance and interface states Interface trap characterization of atomic layer deposition Al2O3/GaN metal-insulator-semiconductor capacitors using optically and thermally based deep level spectroscopies Analysis of AlN/AlGaN/GaN metal-insulator-semiconductor structure by using capacitance-frequencytemperature mapping Appl. Phys. Lett. 101, 043501 (2012); 10.1063/1.4737876 Effects of interface states and temperature on the C -V behavior of metal/insulator/AlGaN/GaN heterostructure capacitorsWe present an analysis method for GaN-based metal-insulator-semiconductor (MIS) devices by using capacitance-frequency-temperature (C-f-T) mapping to evaluate the gate-control efficiency and the interface state density, both exhibiting correlations with the linear-region intrinsic transconductance. The effectiveness of the method was exemplified by application to AlN/AlGaN/GaN MIS devices to elucidate the properties of AlN-AlGaN interfaces depending on their formation processes. Using the C-f-T mapping, we extract the gate-bias-dependent activation energy with its derivative giving the gate-control efficiency, from which we evaluate the AlN-AlGaN interface state density through the Lehovec equivalent circuit in the DC limit. It is shown that the gatecontrol efficiency and the interface state density have correlations with the linear-region intrinsic transconductance, all depending on the interface formation processes. In addition, we give characterization of the AlN-AlGaN interfaces by using X-ray photoelectron spectroscopy, in relation with the results of the analysis. V C 2014 AIP Publishing LLC. [http://dx.

Effect of alloying temperature on the capacitance–voltage and current–voltage characteristics of low‐pressure chemical vapor deposition SiNx/n‐GaN MIS structures

“…The energy level depth of the interface states ( E C – E T ) can be derived from trapped electron emitting time constant τ e by the Shockley–Read–Hall (SRH) statistics: where υ th is thermal electron velocity, σ n is electron capture cross section, and N C is the effective density of states in conduction band in GaN. By frequency‐dependent C–V method , D it can be estimated from the following equation: where V 1 and V 2 are the on‐set voltages for f 1 and f 2 ( f 1 < f 2 ), respectively. E AVG is the average energy between trap energy depth E 1 and E 2 .…”

AlGaN/GaN devices with metal–semiconductor or insulator–semiconductor interfacial layers: Vacuum level step due to dipole and interface fixed charge

“…6 On the other hand, in the case of the MIS devices, V th is affected by the insulator-semiconductor conduction band offset w and the fixed charge density σ int of the insulator-semiconductor interface. Various insulators such as oxides Al 2 O 3 , 7 HfO 2 , 8,9 TiO 2 , 10 AlSiO, 11,12 AlTiO, [13][14][15][16][17][18][19] oxynitrides TaON, 20 AlON, 21 and nitrides BN, 22,23 AlN [24][25][26][27][28] have been employed as a gate insulator for GaN-based devices, where V th can be modulated by both w and σ int . Similarly to f S , w is not uniquely determined by the electron affinity difference between the insulator and the semiconductor, and is affected by insulator-semiconductor interface treatments.…”

Low-frequency noise in AlTiO/AlGaN/GaN metal-insulator-semiconductor field-effect transistors with non-gate-recessed or partially-gate-recessed structures

“…For high-speed and high-power applications, GaN-based metal-insulator-semiconductor field-effect transistors (MIS-FETs) have been extensively investigated using various gate insulators, such as high-dielectric-constant (high-k) oxides Al 2 O 3 [1], HfO 2 [2,3], TiO 2 [4], AlSiO [5,6], AlTiO [7][8][9][10][11][12], high-k oxynitrides TaON [13], AlON [14], and high-k nitrides BN [15,16], AlN [17][18][19][20][21]. In particular, Al x Ti y O (AlTiO), an alloy of Al 2 O 3 and TiO 2 , is an important insulator, because it can be applied to dielectric constant engineering, energy gap engineering, and interface charge engineering [11].…”