Effect of alloying temperature on the capacitance–voltage and current–voltage characteristics of low‐pressure chemical vapor deposition SiN_x/n‐GaN MIS structures

Abstract

The first three authors contributed equally to this work.The low-pressure chemical vapor deposition (LPCVD)-SiN x layer is deposited prior to the ohmic alloying as the passivation layer and gate dielectric layer in GaN device fabrication. The effect of alloying temperature on the LPCVD-SiN x /GaN interface and LPCVD-SiN x dielectric film is evaluated by the capacitance-voltage (C-V) and current-voltage (I-V) characteristics. The C-V analysis by frequency-dependent method and Terman method shows that the higher density of interface states occurs at the higher alloying temperature, while I-V analysis indicates that the higher alloying temperature can lead to smaller current density with slightly deeper traps for PooleFrenkel conduction. The hydrogen-related bonds may be the cause and affects the interfacial properties of LPCVD-SiN x / GaN as well as the electrical properties of LPCVD-SiN x film.

Insight into the Near-Conduction Band States at the Crystallized Interface between GaN and SiNx Grown by Low-Pressure Chemical Vapor Deposition

“…However, the states located close to the conduction band ( E C ) of (Al)­GaN are still relatively high and are commonly higher than 10 13 cm –2 eV –1 . ,− Due to few reports about the experimental value of the capture cross section (σ n ), , σ n is typically inadequately assumed to be constant across the whole interface at a value of 10 –14 –10 –16 cm –2 . Such an assumption would enormously underestimate the emission time constant (τ e ), which could give rise to a current collapse at low frequencies (e.g., <1 MHz), if the actual σ n is lower than 10 –16 cm –2 .…”

An ultrathin-barrier AlGaN/GaN heterostructure: a recess-free technology for the fabrication and integration of GaN-based power devices and power-driven circuits

“…Moreover, their thermal stability has also been investigated using different post-deposition alloying conditions. A slight degradation of the LPCVD-SiN x /GaN interface as well as the leakage-current blocking capability occurs as the alloying temperature is increased from 650 • C to 830 • C [51]. On the other hand, the SiN x dielectric deposited at high temperatures also delivers good time-dependent dielectric breakdown behavior [52].…”

Impact of hydrogen plasma treatment on fluorine-contained silicon nitride films

“…Silicon nitride (SiN) films have been widely used as insulative material in LSIs. For instance, SiN films are used as gate dielectrics in GaN power devices, [1][2][3] InGaZnO thin-film transistors, [4][5][6] and so on. Especially SiN charge trapping memory technology has provided an attractive solution for the MONOS type three-dimensional (3D) NAND flash memories.…”