Impact of hydrogen plasma treatment on fluorine-contained silicon nitride films
Takumi Kobayashi,
Haruto Omata,
Kiyokazu Nakagawa
et al.
Abstract:It has been suggested that the trap energy level in Silicon nitride (SiN) films becomes shallow due to hydrogen and fluorine incorporation, which causes a charge migration in the MONOS memory cells and deteriorates the data retention characteristics. To solve these issues, we have proposed the hydrogen plasma treatment and demonstrated the reduction of the shallow trap density consequent to the removal of hydrogen from SiN films. In this study, the hydrogen plasma treatment is applied to the fluorine-contained… Show more
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