AlGaN/GaN devices with metal–semiconductor or insulator–semiconductor interfacial layers: Vacuum level step due to dipole and interface fixed charge
Yuchen Deng,
Jieensi Gelan,
Kazuya Uryu
et al.
Abstract:We have systematically investigated effects of metal–semiconductor or insulator–semiconductor interfacial layers (ILs) in AlGaN/GaN devices, where AlOx, TiOx, or NiOx is employed as an IL. From capacitance–voltage characteristics of metal/IL/AlGaN/GaN devices with a metal–semiconductor IL between the gate metal and AlGaN, it is shown that the IL modulates the threshold voltage Vth, attributed to the vacuum level step induced by the dipole of the IL. We find negative vacuum level steps for AlOx and TiOx ILs, an… Show more
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