“…16,[21][22][23][24][25] In addition, (In) GaSb-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) have been fabricated and have the attractive advantage of much lower gate leakage current, which is necessary for lowpower logic circuits. [26][27][28] Implementation of III-V CMOS technology on large-scale Si wafers is a key requirement, and significant progress has been made in this area for both InGaAs n-channel and SiGe/Ge p-channel materials. 29,30 The growth of n-and p-channel material using a common buffer layer may ease fabrication constraints associated with integration of the two different materials, as in the case of InGaAs and SiGe.…”