GaSb p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors with Ni/Pt/Au Source/Drain Ohmic Contacts

Wu, Li-Shu; Sun, Bing; Chang, Hudong; Zhao, Wei; Xue, Bin; Zhang, Xiong; Liu, Honggang

doi:10.1088/0256-307x/29/12/127303

Cited by 3 publications

(2 citation statements)

References 20 publications

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“…16,[21][22][23][24][25] In addition, (In) GaSb-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) have been fabricated and have the attractive advantage of much lower gate leakage current, which is necessary for lowpower logic circuits. [26][27][28] Implementation of III-V CMOS technology on large-scale Si wafers is a key requirement, and significant progress has been made in this area for both InGaAs n-channel and SiGe/Ge p-channel materials. 29,30 The growth of n-and p-channel material using a common buffer layer may ease fabrication constraints associated with integration of the two different materials, as in the case of InGaAs and SiGe.…”

Section: Introductionmentioning

confidence: 99%

Strained InGaSb/AlGa(As)Sb Quantum Wells for p-Channel Transistors

Bennett

Podpirka

Boos

et al. 2016

Journal of Elec Materi

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Quantum wells of InGaSb clad by AlGa(As)Sb were grown by molecular beam epitaxy. Well and barrier compositions were chosen to yield biaxial compressive strain and enhanced hole mobility in the InGaSb. Wells with thickness of 7.5 nm exhibited room-temperature mobilities of 1000 cm 2 /V s to 1100 cm 2 / V s, with the surface-layer material influencing two-dimensional hole densities. The introduction of As into the barrier material allows a wider range of p-channel well/barrier combinations and lattice constants. These could be compatible with n-channel InGaAs wells for complementary field-effect transistor circuits which utilize a common buffer layer. InGaSb wells with thicknesses of 20 nm to 30 nm and compressive strains of 1.0% to 1.5% exhibited hole mobilities of 700 cm 2 /V s to 900 cm 2 /V s.

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Section: Introductionmentioning

confidence: 99%

Strained InGaSb/AlGa(As)Sb Quantum Wells for p-Channel Transistors

Bennett

Podpirka

Boos

et al. 2016

Journal of Elec Materi

View full text Add to dashboard Cite

show abstract

“…MBE-Y 2 O 3 is used in our work and all the other reported GaSb MOSFETs are passivated by ALD-Al 2 O 3 using a reduced thermal budget 28,29 or surface chemical pre-treatment, i.e., (NH 4 ) 2 S, prior to the oxide deposition. 30 Among the representative work, the TiN/Al 2 O 3 / HT-Y 2 O 3 /n-GaSb p-MOSFETs demonstrated the highest I d and G m under relatively low driving voltages of À1.5 V along with the lowest S.S. and comparable l h,FE . The S.S.'s of $250 mV/decade or higher were commonly reported for GaSb inversion-channel p-MOSFETs.…”

mentioning

confidence: 96%