“…The usual combination includes wide bandgap MOS of n-type as the host material and second-phase constituents commonly chosen from noble metals (e.g., Pt, Pd, Ag, Au) [43][44][45] or other transition metal oxides (e.g., p-type: NiO, CuO, Cr 2 O 3 , Fe 2 O 3 , Co 3 O 4 , Mn 3 O 4 ; n-type: SnO 2 , ZnO, In 2 O 3 , WO 3 , TiO 2 ) [46,47]. Recent combinations also make use of carbon-based materials (e.g., carbon nanotubes, graphene) [48,49] and two-dimensional (2D) inorganic materials (e.g., transition metal dichalcogenides TMDC, transition metal carbides and nitrides MXenes, phosphorene) [50].…”