Abstract:Microstructured single- and double-layered sensor devices based on p-type hydrogen-terminated nanocrystalline diamond (NCD) films and/or n-type ZnO nanorods (NRs) have been obtained via a facile microwave-plasma-enhanced chemical vapour deposition process or a hydrothermal growth procedure. The morphology and crystal structure of the synthesized materials was analysed with scanning electron microscopy, X-ray diffraction measurements and Raman spectroscopy. The gas sensing properties of the sensors based on i) … Show more
“…Cu 2 O, 16 GaN, 17 graphene, 18 NiO, 7 B-doped diamond lm (BDD) [19][20][21][22] and organic materials, 23 have been exploited as the candidate to replace p-type ZnO semiconductors for the fabrication of pn heterojunctions. Among them, the B-doped diamond lm (bandgap 5.47 eV) is appropriate as a hightemperature p-type conductive material.…”
A heterojunction of n-ZnO nanowire (NW)/p-B-doped diamond (BDD) was fabricated. The rectifying behavior was observed with the turn on voltage of a low value (0.8 V). The forward current at 5 V is 12 times higher than that of a larger diameter n-ZnO nanorod (NR)/p-BDD heterojunction. The electrical transport behaviors for the comparison of n-ZnO NWs/p-BDD and n-ZnO NRs/p-BDD heterojunctions are investigated over various bias voltages. The carrier injection process mechanism for ZnO NWs/BDD is analyzed on the basis of the proposed equilibrium energy band diagrams. The ZnO NWs/BDD heterojunction displays improved I-V characteristics and relatively high performance for the electrical transport properties.
“…Cu 2 O, 16 GaN, 17 graphene, 18 NiO, 7 B-doped diamond lm (BDD) [19][20][21][22] and organic materials, 23 have been exploited as the candidate to replace p-type ZnO semiconductors for the fabrication of pn heterojunctions. Among them, the B-doped diamond lm (bandgap 5.47 eV) is appropriate as a hightemperature p-type conductive material.…”
A heterojunction of n-ZnO nanowire (NW)/p-B-doped diamond (BDD) was fabricated. The rectifying behavior was observed with the turn on voltage of a low value (0.8 V). The forward current at 5 V is 12 times higher than that of a larger diameter n-ZnO nanorod (NR)/p-BDD heterojunction. The electrical transport behaviors for the comparison of n-ZnO NWs/p-BDD and n-ZnO NRs/p-BDD heterojunctions are investigated over various bias voltages. The carrier injection process mechanism for ZnO NWs/BDD is analyzed on the basis of the proposed equilibrium energy band diagrams. The ZnO NWs/BDD heterojunction displays improved I-V characteristics and relatively high performance for the electrical transport properties.
“…All the measurements were performed in a closed chamber with the relative humidity (RH) of 50 ± 20% and the temperature of 20.0 ± 10.0 • C (RT), which was maintained at the same humidity and temperature with the normal indoor condition. The electrical resistance of the sensor devices was measured by a source meter (Keithley 2400, Keithley Instruments Inc., Solon, OH, USA) in constant-current operation using a computer-controlled measurement system with the UV illumination (approximately 2.0 W) [21,22]. A custom written LabView program was used, which allowed temperatures and gas-flow rates to be automatically controlled by a computer.…”
Prolonged exposure to NO2 can cause lung tissue inflammation, bronchiolitis fibrosa obliterans, and silo filler’s disease. In recent years, nanostructured semiconducting metal oxides have been widely used to fabricate gas sensors because of their unique structure and surface-to-volume ratio compared to layered materials. In particular, the different morphologies of ZnO-based nanostructures significantly affect the detection property of NO2 gas sensors. However, because of the large interaction energy of chemisorption (1–10 eV), metal oxide-based gas sensors are typically operated above 100 °C, overcoming the energy limits to attain high sensitivity and fast reaction. High operating temperature negatively affects the reliability and durability of semiconductor-based sensors; at high temperature, the diffusion and sintering effects at the metal oxide grain boundaries are major factors causing undesirable long-term drift problems and preventing stability improvements. Therefore, we demonstrate NO2 gas sensors consisting of ZnO hemitubes (HTs) and nanotubes (NTs) covered with TiO2 nanoparticles (NPs). To operate the gas sensor at room temperature (RT), we measured the gas-sensing properties with ultraviolet illumination onto the active region of the gas sensor for photoactivation instead of conventional thermal activation by heating. The performance of these gas sensors was enhanced by the change of barrier potential at the ZnO/TiO2 interfaces, and their depletion layer was expanded by the NPs formation. The gas sensor based on ZnO HTs showed 1.2 times higher detection property than those consisting of ZnO NTs at the 25 ppm NO2 gas.
“…Zinc oxide (ZnO) is a semiconductor material that can be prepared in various forms and sizes and it is commonly available commercially. It is well known as a material for transparent conductive electrodes and light‐emitting [ 2 ] and gas‐sensor devices [ 3 ] as well for its photocatalytic [ 4 ] and bactericidal properties, [ 5 ] in particular in nanoparticle form. ZnO nanomaterials can be prepared by various methods, from magnetron sputtering, [ 6 ] wet chemical synthesis on substrates [ 1,7 ] and in solutions [ 8 ] to green eco‐friendly approaches.…”
Section: Introductionmentioning
confidence: 99%
“…The mutual interaction of ZnO nanomaterials and biological environment can manifest itself in various ways and can be very specific for particular material and its surface modification. [ 8 ] The surface, shape, size, and doping effects of ZnO provided opportunities for various gas sensors [ 3 ] or biosensors. [ 11 ] Free carrier concentration in ZnO can be significantly increased and photoluminescence altered by hydrogen plasma treatment.…”
Properties and functions of various ZnO materials are intensively investigated in biological systems for diagnostics, therapy, health risks assessment as well as bactericidal and decontamination purposes. Herein, the interface between ZnO and biological environment is studied by characterizing adsorption of bovine serum albumin (BSA) and fetal bovine serum (FBS) using atomic force microscopy with CF4‐treated tips. Similar molecular morphologies (thickness around 2 nm) yet different binding forces to ZnO (10–25 nN) are observed. These observations are corroborated by atomic scale simulations of BSA on (0001) ZnO surface using force‐field method and showing rearrangements of Zn surface atoms. Such binding may have an impact also on other properties of ZnO–BSA complex.
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