Improved electrical transport properties of an n-ZnO nanowire/p-diamond heterojunction

Abstract

A heterojunction of n-ZnO nanowire (NW)/p-B-doped diamond (BDD) was fabricated. The rectifying behavior was observed with the turn on voltage of a low value (0.8 V). The forward current at 5 V is 12 times higher than that of a larger diameter n-ZnO nanorod (NR)/p-BDD heterojunction. The electrical transport behaviors for the comparison of n-ZnO NWs/p-BDD and n-ZnO NRs/p-BDD heterojunctions are investigated over various bias voltages. The carrier injection process mechanism for ZnO NWs/BDD is analyzed on the basis of the proposed equilibrium energy band diagrams. The ZnO NWs/BDD heterojunction displays improved I-V characteristics and relatively high performance for the electrical transport properties.

Electrical Characterization of Si/ZnO Nanorod PN Heterojunction Diode

“…e value of L less than 2 ascribes that the current is attributed to the trap charge limiting current (TCLC) which is associated with the distribution of trapped charges in a junction. is behaviour is usually observed in materials with low free charge carrier concentration [22][23][24][25].…”

Negative Differential Resistance of n-ZnO Nanorods/p-degenerated Diamond Heterojunction at High Temperatures

“…The diamond films displayed a thickness of 4 µm with a deposition time of 4 h. The ZnO NRs fabricated on p-degenerated diamond film were synthesized in a quartz tube within a horizontal tube furnace via the thermal evaporation method. The mixed raw powders of ZnO and aluminum were heated in the quartz tube at 850 • C. P-degenerated diamond substrates were placed downstream from the source to the other end of the tube at ∼500 • C. The experiments were performed under a constant pressure of 6 × 10 4 Pa. After evaporation and growth, the samples were drawn out and cooled to room temperature (Sang et al, 2012(Sang et al, , 2015(Sang et al, , 2018.…”

“…P-degenerated diamond substrates were placed downstream from the source to the other end of the tube at ~500°C. The experiments were performed under a constant pressure of 6 × 10 4 Pa. After evaporation and growth, the samples were drawn out and cooled to room temperature (Sang et al, 2012 , 2015 , 2018 ). To obtain the n-ZnO NRs/p-degenerated diamond tunneling diode, a transparent conductive indium-tin-oxide (ITO) glass was pressed on the top of ZnO NRs as the negative electrode and a silver (Ag) wire was employed as the positive electrode for p-degenerated diamond.…”

Review on the Properties of Boron-Doped Diamond and One-Dimensional-Metal-Oxide Based P-N Heterojunction

“…When combining 1D metal oxide with p-type diamond, one has to explore the carrier transport behavior of the formed heterojunction devices, which has both theoretical and application importance for designing new photoelectronic devices for extremely harsh environments, such as outer space or nuclear energetics industries. In recent years, p-type BDD has been used in combination with various 1D-structured metal oxides (for instance ZnO [ 22 , 30 , 31 , 32 , 33 ], WO 3 [ 34 , 35 , 36 ] and TiO 2 [ 37 , 38 , 39 , 40 , 41 ]) to form heterojunctions demonstrating effects of rectification and negative differential resistance (NDR), which may be widely used in various technologies. However, no comprehensive discussion focusing specifically on electrical characteristic of diamond-based p-n heterojunctions has been published.…”