Because the oxides of nitrogen (NOx) cause detrimental effects on not only the environment but humans, developing a high-performance NO2 gas sensor is a crucial issue for real-time monitoring. To this end, metal oxide semiconductors have been employed for sensor materials. Because in general, semiconductor-type gas sensors require a high working temperature, photoactivation has emerged as an alternative method for realizing the sensor working at room temperature. In this regard, titanium dioxide (TiO2) is a promising material for its photocatalytic ability with ultraviolet (UV) photonic energy. However, TiO2-based sensors inevitably encounter a problem of recombination of photogenerated electron-hole pairs, which occurs in a short time. To address this challenge, in this study, TiO2 nanorods (NRs) and Pt nanoparticles (NPs) under a UV-LED were used as an NO2 gas sensor to utilize the Schottky barrier formed at the TiO2-Pt junction, thereby capturing the photoactivated electrons by Pt NPs. The separation between the electron-hole pairs might be further enhanced by plasmonic effects. In addition, it is reported that annealing TiO2 NRs can achieve noteworthy improvements in sensing performance. Elucidation of the performance enhancement is suggested with the investigation of the X-ray diffraction patterns, which implies that the crystallinity was improved by the annealing process.

Nanostructured semiconducting metal oxides such as SnO2, ZnO, TiO2, and CuO have been widely used to fabricate high performance gas sensors. To improve the sensitivity and stability of gas sensors,...

Prolonged exposure to NO2 can cause lung tissue inflammation, bronchiolitis fibrosa obliterans, and silo filler’s disease. In recent years, nanostructured semiconducting metal oxides have been widely used to fabricate gas sensors because of their unique structure and surface-to-volume ratio compared to layered materials. In particular, the different morphologies of ZnO-based nanostructures significantly affect the detection property of NO2 gas sensors. However, because of the large interaction energy of chemisorption (1–10 eV), metal oxide-based gas sensors are typically operated above 100 °C, overcoming the energy limits to attain high sensitivity and fast reaction. High operating temperature negatively affects the reliability and durability of semiconductor-based sensors; at high temperature, the diffusion and sintering effects at the metal oxide grain boundaries are major factors causing undesirable long-term drift problems and preventing stability improvements. Therefore, we demonstrate NO2 gas sensors consisting of ZnO hemitubes (HTs) and nanotubes (NTs) covered with TiO2 nanoparticles (NPs). To operate the gas sensor at room temperature (RT), we measured the gas-sensing properties with ultraviolet illumination onto the active region of the gas sensor for photoactivation instead of conventional thermal activation by heating. The performance of these gas sensors was enhanced by the change of barrier potential at the ZnO/TiO2 interfaces, and their depletion layer was expanded by the NPs formation. The gas sensor based on ZnO HTs showed 1.2 times higher detection property than those consisting of ZnO NTs at the 25 ppm NO2 gas.

Advancements in nanotechnology have facilitated the increased use of ZnO nanostructures. In particular, hierarchical and core–shell nanostructures, providing a graded refractive index change, have recently been applied to enhance the photon extraction efficiency of photonic emitters. In this study, we demonstrate self-aligned hierarchical ZnO nanorod (ZNR)/NiO nanosheet arrays on a conventional photonic emitter (C-emitter) with a wavelength of 430 nm. These hierarchical nanostructures were synthesized through a two-step hydrothermal process at low temperature, and their optical output power was approximately 17% higher than that of ZNR arrays on a C-emitter and two times higher than that of a C-emitter. These results are due to the graded index change in refractive index from the GaN layer inside the device toward the outside as well as decreases in the total internal reflection and Fresnel reflection of the photonic emitter.