Gas field ion source and liquid metal ion source charged particle material interaction study for semiconductor nanomachining applications

Tan, Sheng; Livengood, Richard H.; Shima, Darryl M.; Notte, John; McVey, Shawn

doi:10.1116/1.3511509

Cited by 58 publications

(44 citation statements)

References 13 publications

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“…As silicon changes from crystalline to amorphous above a well-defined disorder threshold, the observed shape in the TEM is a good indicator of the range of ions. By comparing the shape of the bell-like amorphous region with the MC simulation, it was thus possible to confirm that the N 2 molecules are ionized to N þ 2 .As energetic ions are instantaneously neutralized upon impact onto a solid through the pickup of an electron, the impact of a N 2 molecule onto silicon was calculated by atomistic simulation as well [39]. It confirmed that the N-N bond is broken within a few atomic layer, and the N atoms Figure 5.…”

Section: Field Ionization Of Molecular Nitrogen Gas and Solid-ion Intmentioning

confidence: 99%

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Nitrogen Ion Microscopy

Schmidt¹,

Akabori²,

Mizuta³

2018

Ion Beam Applications

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The gas field ion source (GFIS) can be used to generate beams of helium, neon, hydrogen, and nitrogen ions, among others. Due to the low energy spread and the atomically small virtual source size, highly focused ion beams (FIB) can be obtained. We discuss the history of the GFIS and explain the field ionization and field evaporation process in general. Then, the unique properties of the nitrogen ionization, originating from the molecular nature, are explained. We show how the nitrogen ion microscopy (N2IM) can be used to image and pattern samples. The unique contrast observed in samples with graphene or carbon is reported. Finally, we conclude with an outlook of the technology and possible key applications such as spatially localized nitrogen-vacancy center implantation.

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Section: Field Ionization Of Molecular Nitrogen Gas and Solid-ion Intmentioning

confidence: 99%

“…(g) Atomic resolution HAADF-STEM image of the area indicated by the rectangle in (a), which shows the dumbbell structure of Si(110). Reprinted with permission [39]. Copyright 2017, American Vacuum Society.…”

Section: Field Ionization Of Molecular Nitrogen Gas and Solid-ion Intmentioning

confidence: 99%

Nitrogen Ion Microscopy

Schmidt¹,

Akabori²,

Mizuta³

2018

Ion Beam Applications

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“…Recent advances in novel ion beam technologies seem poised to negate these drawbacks of traditional LMIS FIB systems. The most advanced technology so far has been gas field‐ionization sources (GFIS), in which an atomically sharp tungsten tip is used to ionize light noble gas species, which are then used for imaging and milling (Tan et al ., ). This technology is potentially advantageous for TEM sample preparation as compared to a Ga FIB for two reasons.…”

Section: Introductionmentioning

confidence: 97%

“…Secondly, as He and Ne are noble gases with low atomic weights, they do not form alloys in metallic materials or concentrate into precipitates that could obscure imaging in the TEM. The drawbacks and the damage caused by the GFIS beams are less well understood, but bubble formation has been found to occur after milling with both He and Ne (Tan et al ., ; Gonzalez et al ., ). The focus of this work is to compare the damage from a Ne GFIS beam with a traditional Ga LMIS FIB to evaluate its efficacy in TEM sample preparation.…”

Section: Introductionmentioning

confidence: 99%

Evaluation of neon focused ion beam milling for TEM sample preparation

Pekin

Allen

Minor

2016

Journal of Microscopy

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Gallium-based focused ion beams generated from liquid-metal sources are widely used in micromachining and sample preparation for transmission electron microscopy, with well-known drawbacks such as sample damage and contamination. In this work, an alternative (neon) focused ion beam generated by a gas field-ionization source is evaluated for the preparation of electron-transparent specimens. To do so, electron-transparent sections of Si and an Al alloy are prepared with both Ga and Ne ion beams for direct comparison. Diffraction-contrast imaging and energy dispersive x-ray spectroscopy are used to evaluate the relative damage induced by the two beams, and cross-sections of milled trenches are examined to compare the implantation depth with theoretical predictions from Monte Carlo simulations. Our results show that for the beam voltages and materials systems investigated, Ne ion beam milling does not significantly reduce the focused ion beam induced artefacts. However, the Ne ion beam does enable more precise milling and may be of interest in cases where Ga contamination cannot be tolerated.

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“…The attempt of performing BS in a HIM is connected to a very small beam size and low primary ion energies. It thus is clear that in order to prevent sample damage (by sputtering and/or bubble formation [26][27][28][29]) backscattered particle detection has to be sensitive to both backscattered ions as well as neutrals.…”

Section: Introductionmentioning

confidence: 99%

Nanometer scale elemental analysis in the helium ion microscope using time of flight spectrometry

et al. 2016

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Time of flight backscattering spectrometry (ToF-BS) was successfully implemented in a helium ion microscope (HIM). Its integration introduces the ability to perform laterally resolved elemental analysis as well as elemental depth profiling on the nm scale. A lateral resolution of ≤54nm and a time resolution of Δt≤17ns(Δt/t≤5.4%) are achieved. By using the energy of the backscattered particles for contrast generation, we introduce a new imaging method to the HIM allowing direct elemental mapping as well as local spectrometry. In addition laterally resolved time of flight secondary ion mass spectrometry (ToF-SIMS) can be performed with the same setup. Time of flight is implemented by pulsing the primary ion beam. This is achieved in a cost effective and minimal invasive way that does not influence the high resolution capabilities of the microscope when operating in standard secondary electron (SE) imaging mode. This technique can thus be easily adapted to existing devices. The particular implementation of ToF-BS and ToF-SIMS techniques are described, results are presented and advantages, difficulties and limitations of this new techniques are discussed.

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Gas field ion source and liquid metal ion source charged particle material interaction study for semiconductor nanomachining applications

Cited by 58 publications

References 13 publications

Nitrogen Ion Microscopy

Nitrogen Ion Microscopy

Evaluation of neon focused ion beam milling for TEM sample preparation

Nanometer scale elemental analysis in the helium ion microscope using time of flight spectrometry

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