GaN Nanowire Schottky Barrier Diodes

Sabui, Gourab; Zubialevich, Vitaly Z.; White, Mark H.; Pampili, Pietro; Parbrook, P. J.; McLaren, Mathew; Arredondo, Miryam; Shen, Z. John

doi:10.1109/ted.2017.2679727

Cited by 22 publications

(18 citation statements)

References 34 publications

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“…Both growth modes are important for the preparation of advanced nanoheterostructures such as core–shell NCs and structures with lateral modulation of conductivity. They can be used in various optoelectronics and power electronics devices like core–shell NC-based LEDs, solar cells, photoelectrodes for photoelectrochemical water splitting, and vertical Schottky diodes …”

Section: Discussionmentioning

confidence: 99%

Thermal Stability of Crystallographic Planes of GaN Nanocolumns and Their Overgrowth by Metal Organic Vapor Phase Epitaxy

Zubialevich

Pampili

Parbrook

2020

Crystal Growth & Design

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Thermal annealing of top−down fabricated GaN nanocolumns (NCs) was investigated over a wide range of temperatures for ammonia-rich atmospheres of both nitrogen and hydrogen. It was found that in contrast to the annealing of planar GaN layers, where surface morphology change is governed purely by material decomposition, reshaping of GaN NCs is strongly affected by competition between different crystallographic facets, which in turn depends on ambient atmosphere and temperature. A qualitative mechanism explaining the observed behavior has been proposed. On the basis of the analysis of these annealing results, growth conditions suitable for either predominantly lateral expansion of the NCs turning their sidewalls into six well-defined vertical m-plane facets, or, vice versa, their infilling from the base regions between the NCs were determined. GaN NC arrays of increased filling factors as compared to the as top−down fabricated ones have been demonstrated using these optimized growth conditions.

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Section: Discussionmentioning

confidence: 99%

Thermal Stability of Crystallographic Planes of GaN Nanocolumns and Their Overgrowth by Metal Organic Vapor Phase Epitaxy

Zubialevich

Pampili

Parbrook

2020

Crystal Growth & Design

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“…The GaN NWs fabricated in this way were used as a template to study the core–shell structured LEDs as mentioned above. ,,,, The applications on the power transistors with a wrap gate and Schottky barrier diodes were also reported recently. ,,− As was recently highlighted in the plenary talk given at the International Workshop on Nitride Semiconductors 2018 in Kanazawa by Prof. Tomas Palacios, vertical gated all-around n+ n n+ NWs seem to solve many of the issues encountered by planar high electron mobility transistor technology such as increase in the breakdown voltage as well as increase of the effective current density . This is a natural next step to the previously demonstrated vertical fin-FET technology .…”

Section: Iii-nitride Nanowire Materials and Devicesmentioning

confidence: 99%

Synthesis and Applications of III–V Nanowires

et al. 2019

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Low-dimensional semiconductor materials structures, where nanowires are needle-like one-dimensional examples, have developed into one of the most intensely studied fields of science and technology. The subarea described in this review is compound semiconductor nanowires, with the materials covered limited to III−V materials (like GaAs, InAs, GaP, InP,...) and III-nitride materials (GaN, InGaN, AlGaN,...). We review the way in which several innovative synthesis methods constitute the basis for the realization of highly controlled nanowires, and we combine this perspective with one of how the different families of nanowires can contribute to applications. One reason for the very intense research in this field is motivated by what they can offer to main-stream semiconductors, by which ultrahigh performing electronic (e.g., transistors) and photonic (e.g., photovoltaics, photodetectors or LEDs) technologies can be merged with silicon and CMOS. Other important aspects, also covered in the review, deals with synthesis methods that can lead to dramatic reduction of cost of fabrication and opportunities for up-scaling to mass production methods.

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“…Those NCs with remained dislocations are nevertheless characterized by sidewall surfaces free of them (the only dislocations remaining are those completely "buried" in the middle of NC bodies). Taking into account this feature, one can predict that besides using these NCs for applications of power electronics (the intended use of the present NC arrays was Schottky diodes [45]), they might be especially promising for optoelectronic devices based on heterostructures with a core-shell architecture.…”

Section: Discussionmentioning

confidence: 96%

Reduction of threading dislocation density in top-down fabricated GaN nanocolumns via their lateral overgrowth by MOCVD

Zubialevich

McLaren

Pampili

et al. 2020

Journal of Applied Physics

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Reduction of threading dislocation density in top-down fabricated GaN nanocolumns (NCs) via their successive lateral shrinkage by anisotropic wet etch and lateral overgrowth by metalorganic chemical vapor deposition is studied by transmission electron microscopy. The fabrication process involves a combination of dry and wet etches to produce NC arrays of a low fill factor (<5%), which are then annealed and laterally overgrown to increase the array fill factor to around 20%–30%. The resulting NC arrays show a reduction in threading dislocation density of at least 25 times, allowing for the reduction in material volume due to the array fill factor, with dislocations being observed to bend into the voids between NCs during the overgrowth process.

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GaN Nanowire Schottky Barrier Diodes

Cited by 22 publications

References 34 publications

Thermal Stability of Crystallographic Planes of GaN Nanocolumns and Their Overgrowth by Metal Organic Vapor Phase Epitaxy

Thermal Stability of Crystallographic Planes of GaN Nanocolumns and Their Overgrowth by Metal Organic Vapor Phase Epitaxy

Synthesis and Applications of III–V Nanowires

Reduction of threading dislocation density in top-down fabricated GaN nanocolumns via their lateral overgrowth by MOCVD

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