GaN Nanowire n-MOSFET With 5 nm Channel Length for Applications in Digital Electronics

Chowdhury, Nadim; Iannaccone, Giuseppe; Fiori, Gianluca; Antoniadis, D.A.; Palacios, Tomás

doi:10.1109/led.2017.2703953

Cited by 53 publications

(38 citation statements)

References 19 publications

(18 reference statements)

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“…We have used a sub-10 nm transistor in our simulation. This is because of the remarkable attributes with a wide bandgap (∼3.4 eV) of GaN which proves it useful for sub-10 nm transistor technology [1]. The performance characteristics of the proposed GaN based nanoscale FinFET is analysed using Synopsys TCAD [10] tools by incorporating suitable models, such as Fermi Dirac Statistics which is enabled to report the specific distribution of carriers [10].…”

Section: Simulation Deckmentioning

confidence: 99%

“…Due to the lowest SS value, the GaN as the channel material shows the lowest V th when tuned at the same I OFF . To meet the targeted I OFF , we have used a gate metal work function of 5.2 eV and t min = 0 s for electrons and holes, t max = 1 × 10 −5 s for electrons and 3 × 10 −6 s for holes, N ref = 1 × 10 16 cm −3 , g = 1, and E trap = 0 eV for both electrons and holes Masetti [13] m min1 , m min2 , m 1 are the reference mobility parameters, P c , C r , C s are the reference concentration parameters, and a and b are the fitting parameters μ min1 = μ min2 = 52.2 cm 2 /Vs for electron and μ min1 = 44.9 cm 2 /Vs and μ min2 = 0 cm 2 /Vs for hole, μ 1 = 43.3 cm 2 /Vs for electron and 29.0 cm 2 /Vs for hole, P c = 0 cm −3 and 9.23 × 10 16 cm −3 for electron and hole, C r = 9.68 × 10 16 cm −3 and 2.23 × 10 17 cm −3 for electron and hole, C s = 3.43 × 10 20 cm −3 and 6.10 × 10 20 cm −3 , α = 0.680 for the electron and 0.719 for the hole, and β = 2 for both of the electron and hole is varied in the range of 10 −3 eV [1]. The ON and OFF-state device performances are observed by plotting g m versus SS as demonstrated in Fig.…”

Section: Simulation Deckmentioning

confidence: 99%

“…It has a wide range of applications in high temperature, high frequency, and low and high power electronics when GaN is used as a channel material. This is due to the qualitative properties of GaN like high electron and hole mobilities, high bandgap [1, 2], strong polarisation field, high peak and saturation electron velocity [2], high critical electric field [3], high breakdown voltage, and high sheet carrier density [4]. The aforesaid qualities of the GaN material make it suitable for sub‐10 nm transistor technology [1].…”

Section: Introductionmentioning

confidence: 99%

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Analysis of GaN nanoscale FinFET for low power circuit applications

Das

Baishya

2018

Micro & Nano Letters

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This work introduces a structure of GaN FinFET at the nanoscale (channel length L = 5 nm) and characterises its performance in low power circuit applications. The simulated outcomes justify its application in circuits having I ON , I OFF , and I ON /I OFF of the order of 10 −3 A, 10 −13 A, and 10 10 A, respectively, with quality factor Q = 1.11 × 10 −5 S-dec/mV computed at I OFF 10 −13 A and V DS = 0.5 V. The measured observations are compared with other materials and we observed significant improvement, of the orders of 1 in the case of I ON and 3 in the case of I OFF ; while the same for the Q witnesses a growth of 42%, especially with respect to silicon. The prospect of the proposed device architecture has also been investigated by implementing it in the digital circuits such as the inverter and universal logic gates (NAND and NOR gates), where it showed improved performance like high gain and absence of overshoot and undershoot in the switching characteristics.

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Section: Simulation Deckmentioning

confidence: 99%

Section: Simulation Deckmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Analysis of GaN nanoscale FinFET for low power circuit applications

Das

Baishya

2018

Micro & Nano Letters

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“…These drawbacks have encouraged the use of high-performance channel material and mobility enhancement technology. Hence, to have unique semiconductors as the channel material which enhances both mobility and electrostatics at every stage is the solution [11][12][13][14]. After evaluations of all possible emerging devices, researchers from the industry have suggested the use of carbonbased nanoelectronics, especially carbon nanotubes (CNTs) and graphene.…”

Section: Introductionmentioning

confidence: 99%

Investigation of Carbon Nanotube FET with Coaxial Geometry

Vimala¹,

L²,

Maheshwari³

et al. 2020

J. Nano- Electron. Phys.

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This paper aims to study the behavior of a Carbon Nanotube Field Effect Transistor (CNTFET) which is one of the nanoelectronic devices and a major replacement for Complementary Metal Oxide Semiconductor (CMOS) and MOSFETs, which have a wide range of short channel effects that play a prominent role in their disadvantages and, thus, have made us today to look for a better device. One such device is CNTFET which is better in terms of execution with low power consumption, faster switching speed, high carrier mobility, and very large scale integrated circuits. The channel of this transistor is surrounded by a carbon nanotube, and this paper mainly revolves around the simulation of its current-voltage (I-V) characteristics. The efficiency of this device on the whole depends on device parameters that are shown in the simulation of CNTFET, and the geometry of this device has an excellent dominance on carrier transport and permits for superior electrostatics while the gate contact wraps throughout the channel of a carbon nanotube. A carbon nanotube used for coaxial geometry has a zigzag structure and is semiconducting in nature. To ensure the efficient execution of CNTFETs as a vital part of nanoelectronic devices, chirality factor (n, m) values play an important role whose effect is shown on drain current. Further, the source/drain doping level variations that affect drain current are inspected. Also, I-V characteristics at different temperature conditions are examined which indirectly gives us an idea of the movement of electrons in this device with respect to change in temperature. Additionally, the analysis is also made to see the effect of nanotube length, coaxial gate voltage and gate thickness on I-V characteristics and also to reveal the impact of high-k materials on I-V characteristics.

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“…GaN embedded nanotube FET replaces the substrate of GAA with the inner gate as the second gate and provides effective charge control [6]. GaN as a channel material has a wide electronic band gap, which can significantly reduce inter-band tunneling and gate induced drain leakage, thus providing excellent subthreshold characteristics for GaN embedded nanotube FET [7], [8]. In addition, the electric field across the channel region becomes stronger as the embedded gate structure, leading to the enhancement This work was supported by a project of the National High Technology Research and Development Program ("863" Program,14 nm technology generation silicon-based novel devices and key crafts research,2015AA016501) of China and the Fundamental Research Funds for the Central Universities(2019PTB-016).…”

Section: Introductionmentioning

confidence: 99%

GaN Nanotube FET With Embedded Gate for High Performance, Low Power Applications

Han

Deng

et al. 2020

IEEE J. Electron Devices Soc.

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On the road of CMOS device continuously scaling, there are lots of challenges regarding the device structure and material engineering. GaN channel has recently been used in MOSFETs and achieved excellent performance. In this paper, we study a novel embedded gate GaN nanotube field effect transistor of 5 nm gate length with ION /IOF F as high as 10 6 , and subthreshold swing (SS) as small as 64 mV/dec using Sentaurus TCAD simulation. The device can effectively improve subthreshold characteristics due to the GaN channel and embedded gate design. Compared with Si nanotube FET and GaN nanowire FET, GaN embedded nanotube FET exhibits low SS and high ION /IOF F at the same channel thickness. GaN embedded nanotube FET has also been determined to superior temperature adaptability and performs better in terms of threshold voltage and subthreshold characteristics compared to Si nanotube FET at the same temperature. In addition, we investigated the impact of different lengths and thicknesses of the embedded gate on the subthreshold characteristics. As the length and thickness of the embedded gate are increased, SS and ION /IOF F are improved. This excellent electrical performance demonstrates the possibility of GaN as a channel material in MOSFETs and embedded gate as an effective design to improve subthreshold characteristics, opening a new way for continued device scaling.

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GaN Nanowire n-MOSFET With 5 nm Channel Length for Applications in Digital Electronics

Cited by 53 publications

References 19 publications

Analysis of GaN nanoscale FinFET for low power circuit applications

Analysis of GaN nanoscale FinFET for low power circuit applications

Investigation of Carbon Nanotube FET with Coaxial Geometry

GaN Nanotube FET With Embedded Gate for High Performance, Low Power Applications

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