Abstract:On the road of CMOS device continuously scaling, there are lots of challenges regarding the device structure and material engineering. GaN channel has recently been used in MOSFETs and achieved excellent performance. In this paper, we study a novel embedded gate GaN nanotube field effect transistor of 5 nm gate length with ION /IOF F as high as 10 6 , and subthreshold swing (SS) as small as 64 mV/dec using Sentaurus TCAD simulation. The device can effectively improve subthreshold characteristics due to the GaN… Show more
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