GaN nanostructures by hot dense and extremely non-equilibrium plasma and their characterizations

Mangla, Onkar; Srivastava, M. P.

doi:10.1007/s10853-012-6746-y

Cited by 23 publications

(8 citation statements)

References 29 publications

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“…Two bursts of focused plasma were used for the deposition of ZrO2 nanostructures. The process of formation of a high temperature, high density, and extremely nonequilibrium argon plasma on the top of an anode along with the modifications to the DPF device for nanofabrication have been reported in earlier literature [22,23]. The focused argon plasma formed at the top of modified anode ablates ZrO2 pellet and ablated material ions move vertically upward in a fountain-like structure and are deposited on quartz substrates.…”

Section: Methodsmentioning

confidence: 91%

Monoclinic Zirconium Oxide Nanostructures Having Tunable Band Gap Synthesized under Extremely Non-Equilibrium Plasma Conditions

Mangla

Roy

2018

Iocn 2018

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Zirconium oxide (ZrO2) is a wide and direct band gap semiconductor used for the fabrication of optoelectronic devices. ZrO2 based optoelectronic devices span a wide optical range depending on the band gap of ZrO2 material. The band gap of ZrO2 can be tuned by fabricating it to the nanoscale. In this paper, we synthesized the ZrO2 nanostructures on quartz substrate using ZrO2 ions produced by the ablation of ZrO2 pellet due to high temperature, high density, and extremely non-equilibrium argon plasma in a modified dense plasma focus device. Uniformly distributed monoclinic ZrO2 nanostructures with an average dimension of ~14 nm were obtained through X-ray diffraction and scanning electron microscopy studies. The monoclinic phase of ZrO2 nanostructures is further confirmed from photoluminescence (PL) and Raman spectra. PL spectra show peaks in ultra-violet (UV), near-UV, and visible regions with tunable band gap of nanostructures. A similar tunability of band gap was observed from absorption spectra. The obtained structural, morphological, and optical properties are compared to investigate the potential applications of ZrO2 nanostructures in optoelectronic devices.

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Section: Methodsmentioning

confidence: 91%

Monoclinic Zirconium Oxide Nanostructures Having Tunable Band Gap Synthesized under Extremely Non-Equilibrium Plasma Conditions

Mangla

Roy

2018

Iocn 2018

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“…13,[16][17][18] A schematic arrangement of the DPF device with the modified anode and other modifications is shown in Fig. A 200 nm-thick aluminum (Al) metal film was deposited on the wafer as the bottom electrode by thermal evaporation.…”

Section: Methodsmentioning

confidence: 99%

Metal-insulator-metal capacitors based on lanthanum oxide high-κ dielectric nanolayers fabricated using dense plasma focus device

Mangla

Srivastava

Malhotra

et al. 2014

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Articles you may be interested inHigh aspect ratio iridescent three-dimensional metal-insulator-metal capacitors using atomic layer deposition The role of carbon contamination in voltage linearity and leakage current in high-k metal-insulator-metal capacitors J. Appl. Phys. 104, 054510 (2008); 10.1063/1.2973687 High capacitance density metal-insulator-metal structure based on Al 2 O 3 -Hf Ti O nanolaminate stacks Appl. Phys. Lett. 90, 013506 (2007); 10.1063/1.2425030 Physical and electrical characterization of HfO 2 metal-insulator-metal capacitors for Si analog circuit applicationsMetal-insulator-metal (MIM) capacitors with lanthanum oxide (La 2 O 3 ) high-j dielectric, for potential applications in mixed-signal integrated circuit (IC), have been fabricated using a dense plasma focus device. The electrical characteristics and morphological properties of the fabricated nanodevices are studied. The MIM capacitors were further annealed to enhance the electrical properties in terms of the low leakage current density, the high capacitance density, and the improved capacitance voltage linearity. The minimum leakage current densities of $1.6 Â 10 À9 A/cm 2 and $2.0 Â 10 À10 A/cm 2 at À1 V are obtained along with the maximum capacitance densities of $17.96 fF/lm 2 at 100 kHz and $19.10 fF/lm 2 at 1 MHz, 0 V for as-fabricated and annealed MIM capacitors having 15 nm thick dielectric layers as measured using ellipsometry. The nanofilms with the minimum root mean square roughness of $10 nm are examined using atomic force microscopy. The results are superior compared to some other MIM capacitors and can be optimized to achieve the best electrical parameters for potential applications in radio frequency (RF)/mixed signal ICs. The high frequency C-V measurements indicate an increase in the capacitance density upon increasing the frequency which supports the possibility of potential high-frequency/RF applications of the MIM capacitors.

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“…There are several chemical [14,15] and physical methods that have been successfully employed for fabricating the nanostructures of various materials [16]. Plasma-based processing, such as [17,18], remain popular:…”

Section: усовершенствован способ формирования пористого арсенида галлmentioning

confidence: 99%

Research into effect of electrochemical etching conditions on the morphology of porous gallium arsenide

Vambol

Богданов

Vambol

et al. 2017

EEJET

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GaN nanostructures by hot dense and extremely non-equilibrium plasma and their characterizations

Cited by 23 publications

References 29 publications

Monoclinic Zirconium Oxide Nanostructures Having Tunable Band Gap Synthesized under Extremely Non-Equilibrium Plasma Conditions

Monoclinic Zirconium Oxide Nanostructures Having Tunable Band Gap Synthesized under Extremely Non-Equilibrium Plasma Conditions

Metal-insulator-metal capacitors based on lanthanum oxide high-κ dielectric nanolayers fabricated using dense plasma focus device

Research into effect of electrochemical etching conditions on the morphology of porous gallium arsenide

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