Purpose: f this paper is to is to establish the patterns of oxide formation on the surface of indium phosphide during electrochemical etching of mono-InP. Design/methodology/approach: A porous surface was formed with the anode electrolytic etching. Morphology of the surface was studied with the help of scanning electron microscope JSM-6490. The analysis of chemical composition of porous surface of samples was also performed. Findings: It was shown that during the electrochemical etching of indium phosphide, oxide films and crystallites form on the surface. It has been established that crystalline oxides are formed mainly on the surface of n-type indium phosphide. Continuous oxide films are predominantly formed on the surface of p-InP. Research limitations/implications: The research was carried out for indium phosphide samples synthesized in the solution of hydrofluoric acid, though, carrying out of similar experiments for crystalline oxides on the surface of porous indium phosphide obtained in other conditions, is necessary. Practical implications: The study of oxide crystals on the surface of porous indium phosphide has great practical importance since it is the reproducibility of experimental results that is the main problem of modern materials science, the more nanoengineering. Oxides can significantly affect the properties of materials. On the one hand, oxides significantly affect the recombination properties of materials, this can impair the operation of semiconductor devices. On the other hand, oxide films can serve as a passivating coating for the surface of a porous semiconductor. Such an oxide property will be useful for the practical application of nanostructured indium phosphide. Therefore, questions of the conditions for the formation of semiconductor intrinsic oxides, their structure, and chemical composition, and also the effect of oxides on the physical and technical characteristics of materials are important. Originality/value: The patterns of oxide formation on the surface of indium phosphide during electrochemical etching are investigated in this work. It is shown for the first time that the structure of an oxide depends on the orientation of the surface of the semiconductor. It was shown that continuous oxide films are formed on the surface of p-InP, and oxide crystalline clusters are formed on the surface of n-InP.
Purpose: The purpose of this study is to establish the quality of tests for determining the chemical composition of the porous surface obtained by the method of electrochemical etching, based on the indicators of convergence and reproducibility of the results. Design/methodology/approach: The method of electrochemical etching was used to obtain layers of porous gallium phosphide, which can be used as buffer layers for nitrides formation on their basis. Por-GaP was formed in a solution of hydrofluoric acid at a current density of j =100 mA/cm2, etching was carried out for 20 minutes. The resulting structures sulfide passivation was carried out, thus avoiding the formation of an oxide film on the samples surfaces. For this purpose, porous gallium phosphide samples were kept in a sulfide solution for 10 minutes and dried in a stream of nitrogen. The chemical composition of the porous GaP surface layers has been investigated. To do this, the method of electronprobe INCA Energy microanalysis was used. The research was carried out on the entire surface of the sample in order to calculate the total spectrum of the elemental composition of the sample under study. Findings: It was established that during anodizing, the stoichiometry of the crystals investigated did not shift significantly towards the excess of gallium atoms. Oxygen is present at an insignificant concentration of 0.3%. This indicates the effectiveness of conducting the sulfide passivation of the sample surface following the electrochemical treatment. The presence of fluorine atoms that appeared on the surface as a result of the reaction with the electrolyte during etching, is observed in extremely low concentration. Experimental studies have shown that the sample chosen can be used as a standard enterprise sample when analyzing the chemical composition of the surface of porous gallium phosphide due to its convergence, reproducibility, homogeneity. In addition, the given method for determining the standard sample can be applied to other porous semiconductors. Conducting such studies is an important technological task that will allow us to create a series of standard samples of porous semiconductors of A3B5 group. Research limitations/implications: The research was carried out for porous gallium phosphide samples synthesized in the solution of hydrofluoric acid, though, carrying out of similar experiments for por-GaP obtained in other conditions, is necessary. Practical implications: The studies of the reproducibility and convergence of the experiment have an important practical significance, since it is the reproducibility of the experiment results that is the main problem to modern material science, all the more to nanoengineering. Therefore, the technique proposed, will allow the synthesis of por-GaP layers with adjustable properties, will facilitate their widespread implementation in the real sectors of industry. The obtained porous layers can be used as standard samples. Originality/value: The main problem in the nanostructures synthesis is the adjustability of properties. The technique presented allows to form stable layers of the porous gallium phosphide with the surface chemical composition known in advance. In addition, carrying out the sulfide passivation allows to stabilize por-GaP properties, which is an important process task. For the first time, a study of the presented technique as to convergence, reproducibility and homogeneity, was conducted.
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