GaN hydrogen sensor with Pd-SiO2 mixture forming sensing nanoparticles

Chiu, Shao−Yen; Huang, Hsin-Hsiung; Liang, Kun-Chieh; Huang, Tze-Hsuan; Liu, K.P.; Tsai, Jung‐Hui; Lour, Wen‐Shiung

doi:10.1049/el:20092158

Cited by 6 publications

(4 citation statements)

References 9 publications

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“…Another key merit is response time ( t a ) as defined in [9]. Table 1 summarizes current gains and response times obtained from the measured sensing diode, base, and collector currents.…”

Section: Resultsmentioning

confidence: 99%

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Heterojunction bipolar transistors with a planar‐type extended base as a hydrogen‐sensitive sensor

Huang

Tan

et al. 2022

Electronics Letters

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A hydrogen sensing transistor fabricated by a heterojunction bipolar transistor (HBT) with an extended base (EB) formed by a metal–semiconductor–metal (MSM) hydrogen sensor is reported. The power consumption in stand‐by mode is smaller than 2 µW. Common‐emitter characteristics show that the sensing base (collector) current gains at 25°C in 0.01%, 0.1%, and 1% H2/N2 are as high as 75 (512), 134, (977), and 233 (2.89 × 103), respectively. Low‐power consumption and high‐sensitive gains are indicative that our HBT together with planar‐type MSM sensor is very promising for applications to hydrogen sensing transistors using one voltage source.

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“…Another key merit is response time ( t a ) as defined in [9]. Table 1 summarizes current gains and response times obtained from the measured sensing diode, base, and collector currents.…”

Section: Resultsmentioning

confidence: 99%

“…Power consumption in a stand-by situation is still an issue. Fortunately, a metal-semiconductor-metal (MSM) diode was reported to have two Schottky contacts on the same layer [8,9]. Furthermore, only one source is required to obtain current-voltage characteristics and a very small stand-by current is expected.…”

mentioning

confidence: 99%

Heterojunction bipolar transistors with a planar‐type extended base as a hydrogen‐sensitive sensor

Huang

Tan

et al. 2022

Electronics Letters

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“…Figure 7 shows transient-state responses of the studied ITO-Au device upon the introduction and removal of 175 ppb, 500 ppb, 3,35,200, and 1000 ppm NH 3 gases in air ambience at 150 • C. The applied voltage is fixed at 2 V. In transient-state response, the adsorption (response) and desorption (recovery) times 33,34 are important parameters. Apparently, both the response and recovery times are decreased with increasing the ammonia gas concentration and good transient responses at the introduction and removal of ammonia gases are found.…”

Section: Resultsmentioning

confidence: 99%

Ammonia Gas Sensing Performance of an Indium Tin Oxide (ITO) Based Device with an Underlying Au-Nanodot Layer

Hsu

Chen

Lin

et al. 2012

J. Electrochem. Soc.

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The temperature-dependent ammonia gas sensing performance of an interesting indium tin oxide (ITO) based device with an underlying Au-nanodot layer (ITO-Au) is studied and demonstrated. The studied ITO-Au device exhibits good ammonia gas sensing performance and widespread ammonia gas concentration regime. The optimal operation temperature of the studied ITO-Au device is 150°C. The studied ITO-Au device exhibits the benefit of improved sensing performance and extremely low ammonia gas concentration detecting ability. For example, under introduced 1000 ppm and 175 ppb NH3/air gases, the studied ITO-Au device demonstrates remarkable sensitivity ratios of 1786% and 98%, respectively, at 150°C. The related transient responses are also studied. The enhanced sensing performance of the studied ITO-Au device is primarily caused by the presented rougher surface which gives to the increased effective adsorption area. Experimentally, the studied ITO-Au device reveals advantages of simple structure, ease of fabrication, high sensing response, extremely low ammonia gas detecting limit, and low temperature operation capability.

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“…III-V compound semiconductor-based materials have attracted much attention. Their intrinsic properties, including large and changeable energy-bandgap, high electron mobility make themselves good candidates for the fabrication of electronic devices in specialized fields [2], for example, high-frequency devices, gas sensors, and light-emitting diode (LED) [3][4][5]. Hydrogen sensors based on Schottky diodes, field-effect transistors, and high electron mobility transistors (HEMTs) were successfully fabricated and investigated [6][7][8][9].…”

Section: Introductionmentioning

confidence: 99%

A hydrogen sensor based on a metamorphic high electron mobility transistor (MHEMT)

Tsai

Chen

Lin

et al. 2010

Microelectronics Reliability

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GaN hydrogen sensor with Pd-SiO2 mixture forming sensing nanoparticles

Cited by 6 publications

References 9 publications

Heterojunction bipolar transistors with a planar‐type extended base as a hydrogen‐sensitive sensor

Heterojunction bipolar transistors with a planar‐type extended base as a hydrogen‐sensitive sensor

Ammonia Gas Sensing Performance of an Indium Tin Oxide (ITO) Based Device with an Underlying Au-Nanodot Layer

A hydrogen sensor based on a metamorphic high electron mobility transistor (MHEMT)

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