GaN Gate Injection Transistor with integrated Si Schottky barrier diode for highly efficient DC-DC converters

Morita, Tatsuo; Ujita, Shinji; Umeda, Hidekazu; Kinoshita, Yusuke; Tamura, Shinichi; Anda, Yoshiharu; Ueda, T.; Tanaka, Tsuyoshi

doi:10.1109/iedm.2012.6478996

Cited by 32 publications

(23 citation statements)

References 4 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Vertical GaN-on-Si P-i-N and Schottky diodes [10][11][12][13][14][15][16][17][18], and more recently, the first vertical transistor have been demonstrated on 6-inch Si substrates [19]. For practical use of the emerging vertical transistors in several topologies of power converters, such as buck/boost converters, voltage-source inverters, and resonant converters, an extra freewheeling diode is required to allow a reverse flow of current during off-state [20][21][22]. The intrinsic body P-i-N diode embedded in GaN vertical MOSFETs could work as a freewheeling diode.…”

Section: Introductionmentioning

confidence: 99%

Vertical GaN-on-Si MOSFETs With Monolithically Integrated Freewheeling Schottky Barrier Diodes

Liu

Khadar

Matioli

2018

IEEE Electron Device Lett.

View full text Add to dashboard Cite

1 Abstract-We demonstrate for the first time the monolithic integration of vertical GaN MOSFETs with freewheeling Schottky barrier diodes (SBD), based on a 6.7-μm-thick n-p-n heterostructure grown on 6-inch silicon substrates by metal organic chemical vapor deposition. The anode of the SBD is integrated in the source pad of the MOSFET and the cathode is directly connected to the MOSFET drain through the bottom n + -GaN layer, eliminating the need of any metal wire interconnection. This monolithic integration scheme offers reduced footprint, minimized parasitic components and simplified packaging. The integrated MOSFET-SBD showed enhancement-mode operation with a threshold voltage of 3.9 V, an on/off ratio of over 10 8 and a dramatic improvement in reverse conduction, without degradation in on-state performance from the integration of the SBD. The integrated GaN-on-Si vertical SBD exhibited excellent performance, with a specific on-resistance of 1.6 mΩ·cm 2 , a turn-on voltage of 0.76 V, an ideality factor of 1.5, along with a breakdown voltage of 254 V. These results reveal the promising potential of emerging GaN vertical devices for future power converters.

show abstract

Section: Introductionmentioning

confidence: 99%

Vertical GaN-on-Si MOSFETs With Monolithically Integrated Freewheeling Schottky Barrier Diodes

Liu

Khadar

Matioli

2018

IEEE Electron Device Lett.

View full text Add to dashboard Cite

show abstract

“…This will increase the output capacitance of the device, and therefore increase switching loss, but it may be a practical solution for some applications. In such a case, it is beneficial to package the diode with the HFET to minimize parasitics and reduce overall size [51].…”

Section: Reverse Conduction Behaviormentioning

confidence: 99%

Review of Commercial GaN Power Devices and GaN-Based Converter Design Challenges

Jones

Wang

Costinett

2016

IEEE J. Emerg. Sel. Topics Power Electron.

883

324

View full text Add to dashboard Cite

GaN power devices are an emerging technology that have only recently become available commercially. This new technology enables the design of converters at higher frequencies and efficiencies than those achievable with conventional Si devices. This paper reviews the characteristics and commercial status of both vertical and lateral GaN power devices, providing the background necessary to understand the significance of these recent developments. Additionally, the challenges encountered in GaN-based converter design are considered, such as the consequences of faster switching on gate driver design and board layout. Other issues include the unique reverse conduction behavior, dynamic Rds,on, breakdown mechanisms, thermal design, device availability, and reliability qualification. This review will help prepare the reader to effectively design GaN-based converters as these devices become increasingly available on a commercial scale.

show abstract

“…The GIT using p-AlGaN gate over AlGaN/GaN hetero-junction is fabricated, where the injected holes from the gate increase the drain current by the conductivity modulation [2,3]. The gate length (Lg) of the GIT is reduced down to 0.5μm to reduce the Ron and the parasitic capacitance (Cgs, Cgd) [4]. The HFET has a schottky gate electrode over the AlGaN/GaN hetero-junction.…”

Section: B Device Structure and Characteristicsmentioning

confidence: 99%

A compact GaN-based DC-DC converter IC with high-speed gate drivers enabling high efficiencies

Ujita

Kinoshita

Umeda

et al. 2014

2014 IEEE 26th International Symposium on Power Semiconductor Devices &Amp; IC's (ISPSD)

Self Cite

View full text Add to dashboard Cite

In this paper, we present a novel compact DC-DC converter IC in which normally-off GaN-GITs (Gate Injection Transistors) and gate drivers are integrated into one chip. The DC-DC converter IC can achieve higher efficiency and smaller chip size by reducing parasitic inductances between switching power devices and gate drivers. The gate driver, having a DCFL (Direct Coupled FET Logic) with a buffer amplifier which is consisted of a GaN-HFET (Hetero-junction FET) andGaN-GITs can operate with higher speed and lower power consumption. The fabricated DC-DC converter IC exhibits a peak efficiency as high as 86.6% at 2MHz for the 12V-1.8V conversion.

show abstract

GaN Gate Injection Transistor with integrated Si Schottky barrier diode for highly efficient DC-DC converters

Cited by 32 publications

References 4 publications

Vertical GaN-on-Si MOSFETs With Monolithically Integrated Freewheeling Schottky Barrier Diodes

Vertical GaN-on-Si MOSFETs With Monolithically Integrated Freewheeling Schottky Barrier Diodes

Review of Commercial GaN Power Devices and GaN-Based Converter Design Challenges

A compact GaN-based DC-DC converter IC with high-speed gate drivers enabling high efficiencies

Contact Info

Product

Resources

About