A compact GaN-based DC-DC converter IC with high-speed gate drivers enabling high efficiencies

Ujita, Shinji; Kinoshita, Yusuke; Umeda, Hidekazu; Morita, Tatsuo; Tamura, Shinichi; Ishida, M.; Ueda, T.

doi:10.1109/ispsd.2014.6855973

Cited by 70 publications

(26 citation statements)

References 5 publications

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“…This has been accomplished at 12 V by EPC and Panasonic, although isolation of the two devices on a shared die may be difficult to accomplish at higher voltage [72], [73]. Furthermore, a GaNbased gate driver can be monolithically integrated on the same die as the HFET for ultra-fast switching capabilities.…”

Section: B Device Packaging and Pcb Layoutmentioning

confidence: 99%

Review of Commercial GaN Power Devices and GaN-Based Converter Design Challenges

Jones

Wang

Costinett

2016

IEEE J. Emerg. Sel. Topics Power Electron.

837

324

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GaN power devices are an emerging technology that have only recently become available commercially. This new technology enables the design of converters at higher frequencies and efficiencies than those achievable with conventional Si devices. This paper reviews the characteristics and commercial status of both vertical and lateral GaN power devices, providing the background necessary to understand the significance of these recent developments. Additionally, the challenges encountered in GaN-based converter design are considered, such as the consequences of faster switching on gate driver design and board layout. Other issues include the unique reverse conduction behavior, dynamic Rds,on, breakdown mechanisms, thermal design, device availability, and reliability qualification. This review will help prepare the reader to effectively design GaN-based converters as these devices become increasingly available on a commercial scale.

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Section: B Device Packaging and Pcb Layoutmentioning

confidence: 99%

Review of Commercial GaN Power Devices and GaN-Based Converter Design Challenges

Jones

Wang

Costinett

2016

IEEE J. Emerg. Sel. Topics Power Electron.

837

324

View full text Add to dashboard Cite

show abstract

“…44 Its first fully all-GaN-based IC published in Ref. 85 utilizes one normally-ON device and one normally-OFF device to form an inverter, which is the basic structure of a voltage-driven gate driver. More monolithic GaN IC designs with additional functions and improved driving features are reported in Refs.…”

Section: Gan Power Modulesmentioning

confidence: 99%

Current Trends in the Development of Normally-OFF GaN-on-Si Power Transistors and Power Modules: A Review

Kim

Zhang

et al. 2020

Journal of Elec Materi

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Gallium nitride (GaN) power transistors have attracted significant interest in the power electronics industry over the past decade as the next-generation power semiconductor devices. GaN power transistors are suitable for high power and high frequency applications due to their higher electron mobility, temperature tolerance, electrical conductivity, critical breakdown electric field, and breakdown voltage compared to the conventional silicon-based transistors and other wide bandgap (WBG) power transistors. In particular, GaN-on-silicon (GaN-on-Si) technology has opened up the possibility of manufacturing high-performance, low-cost WBG power devices in silicon-compatible fabrication facilities. The first GaN power transistor structure to be developed was the normally-ON depletion mode (D-mode) device. It relies on the highly mobile two-dimension electron gas (2DEG) at the GaN/AlGaN epitaxial layers' interface to provide very low on-resistance. The normally-OFF enhancement mode (E-mode) GaN power transistor soon became available by controlling the 2DEG using various gate structures. This paper provides a review of the developments of GaN power transistors followed by a survey on current state-of-the-art GaN power technologies and applications, including comparisons between GaN growth substrates and developments of enhancement mode (E-mode) device structures and their process techniques. Moreover, developments of power module designs are also addressed, including gate driver designs and their requirements, and packaging techniques for power transistors and power modules.

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“…Integration schemes in power converters start from normally-OFF HEMTs with diodes for boost converters using fluorine-ion implantation technique in 2008 [39], [40] and p-type cap-layer Gate-Injection-Transistor technique in 2012 [41]. Later integrated half-bridges, full-bridges are realized with pre-gate driver to reduce the inductance of gate drive loop and a 12 V-1.8 V converter exhibits peak efficiency of 86.6 % at 2 MHz [42]. In the meantime, functional circuits such as inverter [43], comparator [44], voltage reference generator [45] and pulse-width-modulation circuit [46] are fabricated and have successfully demonstrated the analog functions of GaN integrated circuits.…”

Section: Introductionmentioning

confidence: 99%

GaN Power Integration for High Frequency and High Efficiency Power Applications: A Review

et al. 2020

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High frequency and high efficiency operation is one of the premier interests in the signal and energy conversion applications. The wide bandgap GaN based devices possess superior properties and have demonstrated exceeding performance than Si or GaAs devices. In order to further exploit the potential of GaN electronics, monolithic power integration is proposed. Firstly, this paper discusses the structure and properties of GaN power devices to explain the choice of lateral integration in the view of GaN power ICs. Then the state-of-the-art performance of GaN power integration in two major application areas is reviewed, which are the microwave power amplification and DC-DC power conversion. The GaN power integration technologies in MMIC platforms are summarized in terms of the gate length, operation frequency and power added efficiency of ICs. On the other hand, the smart GaN power IC platforms have boosted the development of DC-DC power converters. Demonstrations of high frequency (>1 MHz) and high efficiency (>95 %) converters with various kinds of integration technology and topology are reviewed. Lastly novel integration schemes and methods are introduced to stimulate new thoughts on GaN power integration road.

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A compact GaN-based DC-DC converter IC with high-speed gate drivers enabling high efficiencies

Cited by 70 publications

References 5 publications

Review of Commercial GaN Power Devices and GaN-Based Converter Design Challenges

Review of Commercial GaN Power Devices and GaN-Based Converter Design Challenges

Current Trends in the Development of Normally-OFF GaN-on-Si Power Transistors and Power Modules: A Review

GaN Power Integration for High Frequency and High Efficiency Power Applications: A Review

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