GaN-based waveguide devices for long-wavelength optical communications

Hui, Rongqing; Taherion, Saeed; Wan, Yueting; Li, Jilu; Jin, S. X.; Lin, J. Y.; Jiang, H. X.

doi:10.1063/1.1557790

Cited by 69 publications

(46 citation statements)

References 9 publications

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“…In this paper, we propose to make functional optical waveguide devices using GaN-AlGaN semiconductor materials and explore their potential applications in infrared wavelength regions for fiber-optic communications. We found that the refractive index of GaN decreases with wavelength and reaches to approximately 2.31 in the 1550-nm wavelength window [8]. This provides a much better refractive index match with optical fibers than InP does.…”

mentioning

confidence: 78%

III-nitride-based planar lightwave circuits for long wavelength optical communications

Hui

Wan

et al. 2005

IEEE J. Quantum Electron.

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mentioning

confidence: 78%

III-nitride-based planar lightwave circuits for long wavelength optical communications

Hui

Wan

et al. 2005

IEEE J. Quantum Electron.

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“…However, a limited number of experimental studies, performed with GaN channel waveguides, have shown the measured values of the propagation loss at 1550 nm ranging from 18 dB/cm to 34.4 dB/cm [25][26][27] for a variety of substrate materials, such as sapphire, silicon, and aluminum nitride. There is a single study reporting the propagation loss as low as 1 dB/cm for a GaN ridge waveguide on sapphire [28].…”

Section: Optical Characterizationmentioning

confidence: 99%

Fabrication and optical characterization of GaN waveguides on (−201)-oriented β-Ga_2O_3

Awan

Muhammad

Sivan

et al. 2017

Opt. Mater. Express

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KAUST RepositoryAbstract: Gallium nitride (GaN), a wide-bandgap III-V semiconductor material with a bandgap wavelength λ g = 366 nm (for Wurtzite GaN) and transparency window covering the visible spectrum, has a large number of applications for photonics and optoelectronics. However, the optical quality of this material suffers from growth imperfections due to the lack of a suitable substrate. Recent studies have shown that GaN grown on (-201) β − Ga 2 O 3 (gallium oxide) has better lattice matching and hence superior optical quality as compared to GaN grown traditionally on Al 2 O 3 (sapphire). In this work, we report on the fabrication of GaN waveguides on Ga 2 O 3 substrate, followed by a wet-etch process aimed at the reduction of waveguide surface roughness and improvement of side-wall verticality in these waveguides. The propagation loss in the resulting waveguides has been experimentally determined to be 7.5 dB/cm.

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“…Thus far, research in III-nitrides has focused on applications in the blue/UV wavelength regions [3][4][5][6]. However, very little work has been done on the GaN-based optical waveguide for application in optical communication [7][8][9]. In this paper, we propose a design of a low-loss Y-branch, which is a fundamental element in constructing photonic integrated circuits, such as power splitters, and Mach Zehnder interferometers.…”

Section: Introductionmentioning

confidence: 99%

Design of GaN-Based Low-Loss Y-Branch Power Splitter

Purnamaningsih

Saraswati

Poespawati

et al. 2015

MST

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We present a Y-branch power splitter design with a multimode section using GaN on Sapphire at telecommunication wavelength. The GaN sample optical properties were also investigated, resulting in a refractive index for the GaN layers nTE=2.289±0.001 and nTM=2.324±0.00. Optimization of the structure parameters for this structure was conducted accurately using BPM methods. The results demonstrated the possibility of realizing a GaN-based Y-branch power splitter for various applications. AbstrakDesain Pembagi Daya Pencabangan Y Rugi-Rugi Rendah Berbasis GaN. Pada penelitian ini dilaporkan desain pembagi daya pencabangan Y dengan memanfaatkan pandu gelombang moda jamak pada panjang gelombang telekomunikasi menggunakan material GaN pada Safir. Hasil pengukuran sifat optik menunjukkan bahwa indek bias sampel GaN pada Safir adalah nTE=2,289±0,001 dan nTM= 2,324±0,00. Dari hasil optimasi parameter struktur dengan metoda BPM ditunjukan bahwa pembagi daya pencabangan Y berbasis bahan GaN.berpotensi untuk direalisasi

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GaN-based waveguide devices for long-wavelength optical communications

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Cited by 69 publications

References 9 publications

III-nitride-based planar lightwave circuits for long wavelength optical communications

III-nitride-based planar lightwave circuits for long wavelength optical communications

Fabrication and optical characterization of GaN waveguides on (−201)-oriented β-Ga_2O_3

Design of GaN-Based Low-Loss Y-Branch Power Splitter

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