III-nitride-based planar lightwave circuits for long wavelength optical communications

Hui, Rongqing; Wan, Yueting; Li, Jing; Jin, S. X.; Lin, J. Y.; Jiang, H. X.

doi:10.1109/jqe.2004.838169

Cited by 35 publications

(6 citation statements)

References 28 publications

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“…[14][15][16] Since then, recent advances in GaN processing has reduced ridge waveguide propagation loss below 1 dB/cm using AlGaN cladding, 17 wet etching, 18 or short period-superlattice structures. 19 Our group has previously demonstrated high Q optical resonance and second harmonic generation in GaN 20 using an oxideassisted wafer bonding process.…”

mentioning

confidence: 99%

Broadband nanophotonic waveguides and resonators based on epitaxial GaN thin films

Bruch

Xiong

Leung

et al. 2015

Applied Physics Letters

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We demonstrate broadband, low loss optical waveguiding in single crystalline GaN grown epitaxially on c-plane sapphire wafers through a buffered metal-organic chemical vapor phase deposition process. High Q optical microring resonators are realized in near infrared, infrared, and near visible regimes with intrinsic quality factors exceeding 50 000 at all the wavelengths we studied. TEM analysis of etched waveguide reveals growth and etch-induced defects. Reduction of these defects through improved material and device processing could lead to even lower optical losses and enable a wideband photonic platform based on GaN-on-sapphire material system.

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mentioning

confidence: 99%

Broadband nanophotonic waveguides and resonators based on epitaxial GaN thin films

Bruch

Xiong

Leung

et al. 2015

Applied Physics Letters

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“…15 However, it is not always easy to compare to previous studies on Al x Ga 1Àx N with x ( 0.7) composition such as Hui et al 9 Nevertheless, compared to Ref. 9 polynomial expression linking the averaged refractive index dependence on the Al molar fraction at 1550 nm, our refractive index values are slightly higher (2.034/2.075 compared to 2.031).…”

Section: A Photocurrent Spectroscopymentioning

confidence: 58%

“…Present GaN-based optical waveguide on sapphire need a lattice match layer as Al x Ga 1Àx N with low x content. 9 In comparison, AlN-based waveguiding structure can be formed by a thin film directly grown on sapphire (Al 2 O 3 ) substrate because it has a lower refractive index than AlN. The growth of c-oriented AlN on (001) sapphire exhibits a lattice mismatch of about 12.4%.…”

mentioning

confidence: 99%

Dispersion properties and low infrared optical losses in epitaxial AlN on sapphire substrate in the visible and infrared range

Soltani

Stolz

Charrier

et al. 2014

Journal of Applied Physics

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The authors are grateful to John Jackson from Metricon Corp., for the technical support provided.International audienceOptical waveguiding properties of a thick wurtzite aluminum nitride highly [002]-textured hetero-epitaxial film on (001) basal plane of sapphire substrate are studied. The physical properties of the film are determined by X-ray diffraction, atomic force microscopy, microRaman, and photocurrent spectroscopy. The refractive index and the thermo-optic coefficients are determined by m-lines spectroscopy using the classical prism coupling technique. The optical losses of this planar waveguide are also measured in the spectral range of 450-1553 nm. The lower value of optical losses is equal to 0.7 dB/cm at 1553 nm. The optical losses due to the surface scattering are simulated showing that the contribution is the most significant at near infrared wavelength range, whereas the optical losses are due to volume scattering and material absorption in the visible range. The good physical properties and the low optical losses obtained from this planar waveguide are encouraging to achieve a wide bandgap optical guiding platform from these aluminum nitride thin films. © 2014 AIP Publishing LL

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“…For instance, the input coupling efficiency C can be increased with the use of antireflection coatings and/or coupling optics providing a better match to the waveguide fundamental mode. Based on previously reported results with similar waveguides, 15,27 a factor of at least 2 improvement in C can be readily achieved, leading to a decrease in the required in-fiber control-pulse switching energy by the same amount. A similar improvement can be obtained using QWs providing ISB transitions at slightly longer wavelengths so that the effective nonlinear index is peaked at the desired operation wavelength of 1550 nm ͑cf.…”

Section: Discussionmentioning

confidence: 71%

Refractive-index nonlinearities of intersubband transitions in GaN/AlN quantum-well waveguides

Li¹,

Bhattacharyya²,

Thomidis³

et al. 2008

Journal of Applied Physics

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The refractive-index nonlinearities of intersubband transitions in GaN/AlN quantum-well waveguides are investigated. A large spectral broadening of TM-polarized near-infrared pulses is observed after propagation through these devices due to intersubband self-phase modulation. From the measured data, a nonlinear refractive index n 2 of 1.8ϫ 10 −12 cm 2 / W is estimated at the operating wavelength of 1550 nm. A detailed theoretical model of the intersubband refractive index as a function of wavelength and optical intensity is then presented. This model assumes an inhomogeneously broadened transition line and is based on experimentally determined material and device parameters. The results of this study are finally used to discuss the prospects of nitride quantum wells for all-optical switching via cross-phase modulation.

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III-nitride-based planar lightwave circuits for long wavelength optical communications

Cited by 35 publications

References 28 publications

Broadband nanophotonic waveguides and resonators based on epitaxial GaN thin films

Broadband nanophotonic waveguides and resonators based on epitaxial GaN thin films

Dispersion properties and low infrared optical losses in epitaxial AlN on sapphire substrate in the visible and infrared range

Refractive-index nonlinearities of intersubband transitions in GaN/AlN quantum-well waveguides

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