Design of GaN-Based Low-Loss Y-Branch Power Splitter

Abstract

We present a Y-branch power splitter design with a multimode section using GaN on Sapphire at telecommunication wavelength. The GaN sample optical properties were also investigated, resulting in a refractive index for the GaN layers nTE=2.289±0.001 and nTM=2.324±0.00. Optimization of the structure parameters for this structure was conducted accurately using BPM methods. The results demonstrated the possibility of realizing a GaN-based Y-branch power splitter for various applications. AbstrakDesain Pembagi Daya Pencabangan Y Rugi-Rugi Rendah Berbasis GaN. Pada penelitian ini dilaporkan desain pembagi daya pencabangan Y dengan memanfaatkan pandu gelombang moda jamak pada panjang gelombang telekomunikasi menggunakan material GaN pada Safir. Hasil pengukuran sifat optik menunjukkan bahwa indek bias sampel GaN pada Safir adalah nTE=2,289±0,001 dan nTM= 2,324±0,00. Dari hasil optimasi parameter struktur dengan metoda BPM ditunjukan bahwa pembagi daya pencabangan Y berbasis bahan GaN.berpotensi untuk direalisasi

Design of a Four-Branch Optical Power Splitter Based on Gallium-Nitride Using Rectangular Waveguide Coupling for Telecommunication Links

“…Next, the transmission coefficient for each output waveguide at the C-band range was observed by calculating it using (17) as follows:…”

“…However, besides being developed as a light source and photodetectors, III-nitride based waveguide device design has also been developed. The design of the Y junction and MMI structure splitter using GaN/sapphire for long wavelength optical communication systems have been demonstrated [17,18]. A transferrable monolithic IIInitride photonic circuit for multifunctional optoelectronics has been developed [19].…”

III-Nitride Semiconductors based Optical Power Splitter Device Design for underwater Application

“…The III-nitride system includes three binary compounds consisting of aluminum nitride (AlN), gallium nitride (GaN), and indium nitride (InN); three ternary compounds of AlxGa1-xN, InxGa1-xN, and InxAl1-xN; and the quaternary compounds AlxInyGa1-x-yN. This system is particularly suitable for Optoelectronics since its band gap continuously ranges from 6.2 eV for AlN to 1 eV for InN, which covers the entire visible, near ultraviolet and near-infrared portions of the electromagnetic wave spectrum [21].…”

“…Finally, an interlayer consisting of 10 times GaN/AlN layers having a total thickness of 200 nm were carried out under the same HT conditions, and GaN has grown on top of the interlayer. The experimental process is described in the literature [21].…”

“…The design of III-nitride based on Y junction, MMI structure splitter used for high-speed optical communication systems have been demonstrated [21], [22]. Design of free standing GaN waveguides has also reported [23].…”