GaN-based Gate Injection Transistors for power switching applications

Ueda, T.; Handa, Hiroyuki; Kinoshita, Yusuke; Umeda, Hidekazu; Ujita, Shinji; Kajitani, Ryo; Ogawa, Masahiro; Tanaka, Kenichiro; Morita, Tatsuo; Tamura, Shinichi; Ishida, Hideyuki; Ishida, M.

doi:10.1109/iedm.2014.7047031

Cited by 11 publications

(5 citation statements)

References 6 publications

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“…Injection of holes through the gate can significantly increase the drain current by means of conductivity modulation but at the cost of increased gate leakage current. 7,8 Furthermore, adding a second pGaN region near the drain can create what is known as a Hybrid-Drain Gate Injection Transistor (HD-GIT) where the pGaN near the gate injects holes under the drain in the off-state with a high drain bias. This effectively releases trapped electrons during the process of switching which effectively eliminates current collapse.…”

Section: Device Structure and Simulation Methodologymentioning

confidence: 99%

Effects of Heterostructure Design on Performance for Low Voltage GaN Power HEMTs

Binder

Khan

Yang

et al. 2019

ECS J. Solid State Sci. Technol.

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This paper presents a fabless design approach focusing on the impact of heterostructure design on the performance of low voltage GaN power HEMTs. Compared to the standard high voltage design process, low voltage design (<100 V) comes with a unique set of challenges especially concerning breakdown rules. Low voltage simulations reveal less dependence on vertical leakage current and substrate breakdown compared to high voltage designs, and more reliance on buffer leakage and punch-through as the dominant factors leading to breakdown. To analyze the impact of heterostructure design on the device performance, optimization curves are presented for breakdown voltage, on-state resistance, and gate charge. Simulations are performed in Sentaurus TCAD and correlated to known existing experimental results where possible. Trends are presented for the optimization of the channel layer thickness, barrier layer thickness and molar fraction, and impact of an AlN interlayer.

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Section: Device Structure and Simulation Methodologymentioning

confidence: 99%

Effects of Heterostructure Design on Performance for Low Voltage GaN Power HEMTs

Binder

Khan

Yang

et al. 2019

ECS J. Solid State Sci. Technol.

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“…16. 14) The breakdown voltage of the employed GITs is 30 V. Figure 17 shows the operating efficiencies of the POL for the down conversion from 12 to 1.2 V at various frequencies plotted as a function of the operating current. The peak operating efficiency at 2 MHz reaches 90%, while the operating current can be increased up to 50 A by a single converter module.…”

Section: Power Switching Systems Using Gitsmentioning

confidence: 99%

“…[10][11][12] By using the GaN transistors with breakdown voltages up to 600 V, highly efficient switching systems exhibiting a great potential of the new material have been demonstrated. 13,14) High-frequency applications can also receive the benefit of the established GaN-on-Si technology for further cost reduction. Thus, GaN transistors on Si are very promising in various applications because of their inherent low cost fabrication and highly efficient operations.…”

Section: Introductionmentioning

confidence: 99%

GaN transistors on Si for switching and high-frequency applications

Ueda

Ishida

Tanaka

et al. 2014

Jpn. J. Appl. Phys.

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In this paper, recent advances of GaN transistors on Si for switching and high-frequency applications are reviewed. Novel epitaxial structures including superlattice interlayers grown by metal organic chemical vapor deposition (MOCVD) relieve the strain and eliminate the cracks in the GaN over large-diameter Si substrates up to 8 in. As a new device structure for high-power switching application, Gate Injection Transistors (GITs) with a p-AlGaN gate over an AlGaN/GaN heterostructure successfully achieve normally-off operations maintaining high drain currents and low onstate resistances. Note that the GITs on Si are free from current collapse up to 600 V, by which the drain current would be markedly reduced after the application of high drain voltages. Highly efficient operations of an inverter and DC-DC converters are presented as promising applications of GITs for power switching. The high efficiencies in an inverter, a resonant LLC converter, and a point-of-load (POL) converter demonstrate the superior potential of the GaN transistors on Si. As for high-frequency transistors, AlGaN/GaN heterojuction field-effect transistors (HFETs) on Si designed specifically for microwave and millimeter-wave frequencies demonstrate a sufficiently high output power at these frequencies. Output powers of 203 W at 2.5 GHz and 10.7 W at 26.5 GHz are achieved by the fabricated GaN transistors. These devices for switching and highfrequency applications are very promising as future energy-efficient electronics because of their inherent low fabrication cost and superior device performance.

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“…[1][2][3][4][5] For power electronics applications, GaN HEMTs are more attractive compared with silicon-based power devices because of their higher critical breakdown electric field and higher current driving capability. [6,7] For safe-failed operation and simple drive circuits, designs of normally-off GaN devices are essential, [8,9] and several techniques to realize normally-off GaN devices have been proposed like thin AlGaN barrier, [10] fluorine implantation, [11] trench gate. [12] Recently p-GaN gate technique has become the most prevalent method to achieve normally-off GaN HEMTs, [13][14][15] and based on this technique several high breakdown voltage GaN HEMTs with high breakdown voltage and high switching speed have been released.…”

Section: Introductionmentioning

confidence: 99%

A novel high breakdown voltage and high switching speed GaN HEMT with p-GaN gate and hybrid AlGaN buffer layer for power electronics applications*

Liu

2020

Chinese Phys. B

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A novel p-GaN gate GaN high-electron-mobility transistor (HEMT) with an AlGaN buffer layer and hybrid dielectric zone (H-HEMT) is proposed. The hybrid dielectric zone is located in the buffer and composed of horizontal arranged HfO2 zone and SiN x zone. The proposed H-HEMT is numerically simulated and optimized by the Silvaco TCAD tools (ATLAS), and the DC, breakdown, C–V and switching properties of the proposed device are characterized. The breakdown voltage of the proposed HEMT is significantly improved with the introduction of the hybrid dielectric zone, which can effectively modulate the electric field distribution in the GaN channel and the buffer. High breakdown voltage of 1490 V, low specific on-state resistance of 0.45 mΩ⋅cm2 and high Baliga’s figure of merit (FOM) of 5.3 GW/cm2, small R on Q oss of 212 mΩ⋅nC, high turn-on speed 627 V/ns and high turn-off speed 87 V/ns are obtained at the same time with the gate-to-drain distance L gd of 6 μm.

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GaN-based Gate Injection Transistors for power switching applications

Cited by 11 publications

References 6 publications

Effects of Heterostructure Design on Performance for Low Voltage GaN Power HEMTs

Effects of Heterostructure Design on Performance for Low Voltage GaN Power HEMTs

GaN transistors on Si for switching and high-frequency applications

A novel high breakdown voltage and high switching speed GaN HEMT with p-GaN gate and hybrid AlGaN buffer layer for power electronics applications*

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