Gamma and Proton-Induced Dark Current Degradation of 5T CMOS Pinned Photodiode $0.18~\mu\hbox{m}$ CMOS Image Sensors

Martin, E.; Nuns, T.; David, Jean‐Pierre; Gilard, O.; Vaillant, Jacques; Fereyre, Pierre; Prevost, V.; Boutillier, M.

doi:10.1109/tns.2013.2297204

Cited by 6 publications

(5 citation statements)

References 31 publications

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“…Finally, as regards the dark current uniformity, the dark current distributions were pretty uniform and no border effect was observed (contrary to what has been reported in [29]- [31]).…”

Section: Dark Current Increasecontrasting

confidence: 90%

Multi-MGy Radiation Hard CMOS Image Sensor: Design, Characterization and X/Gamma Rays Total Ionizing Dose Tests

Goiffon

Corbière

Rolando

et al. 2015

IEEE Trans. Nucl. Sci.

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International audienceA Radiation Hard CMOS Active Pixel Image Sensor has been designed, manufactured and exposed to X and 60Co γ-ray sources up to several MGy of Total Ionizing Dose (TID). It is demonstrated that a Radiation-Hardened-By-Design (RHBD) CMOS Image Sensor (CIS) can still provide useful images after 10 MGy(SiO2) (i.e. 1 Grad). This paper also presents the first detailed characterizations of CIS opto-electrical performances (i.e. dark current, quantum efficiency, gain, noise, transfer functions, etc.) in the MGy range. These results show that it is possible to design a CIS with good performances even after having absorbed several MGy. Four different RHBD photodiode designs are compared: a standard photodiode design, two well known RHBD layouts and a proposed improvement of the gated photodiode design. The proposed layout exhibits the best performances over the entire studied TID range and further optimizations are discussed. Several original MGy radiation effects are presented and discussed at the device and circuit levels and mitigation techniques are proposed to improve further the radiation hardness of future Rad-Hard CIS developments for extreme TID applications (e.g. for nuclear power plant monitoring/dismantling, experimental reactors (e.g. ITER) or next generation particle physics experiments (e.g. CERN))

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“…Finally, as regards the dark current uniformity, the dark current distributions were pretty uniform and no border effect was observed (contrary to what has been reported in [29]- [31]).…”

Section: Dark Current Increasecontrasting

confidence: 90%

Multi-MGy Radiation Hard CMOS Image Sensor: Design, Characterization and X/Gamma Rays Total Ionizing Dose Tests

Goiffon

Corbière

Rolando

et al. 2015

IEEE Trans. Nucl. Sci.

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“…This is in good agreement with [6] which reports no difference between PPD CIS irradiated ON and those grounded during exposure. However, this is in clear contradiction with [14] 2 that demonstrates an effect of duty cycle on the dark current increase. There is no obvious explanation for these discrepancies and more data on more technologies and bias conditions would be needed to clarify this point.…”

Section: A Overview and Effect Of Bias During Irradiationcontrasting

confidence: 82%

“…The effect of TG OFF bias during irradiation has also been studied and no difference has been observed between the two tested conditions (in agreement with [6] but in contradiction with [14]). Contrary to what has been suggested in [6], the PPD capacitance is not influenced by the TID in the tested dose range and it is not the cause of the FWC reduction.…”

Section: Discussionmentioning

confidence: 60%

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Influence of Transfer Gate Design and Bias on the Radiation Hardness of Pinned Photodiode CMOS Image Sensors

Goiffon

Estribeau

Cervantes

et al. 2014

IEEE Trans. Nucl. Sci.

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The effects of Cobalt 60 gamma-ray irradiation on pinned photodiode (PPD) CMOS image sensors (CIS) are investigated by comparing the total ionizing dose (TID) response of several transfer gate (TG) and PPD designs manufactured using a 180 nm CIS process. The TID induced variations of charge transfer efficiency (CTE), pinning voltage, equilibrium full well capacity (EFWC), full well capacity (FWC) and dark current measured on the different pixel designs lead to the conclusion that only three degradation sources are responsible for all the observed radiation effects: the pre-metal dielectric (PMD) positive trapped charge, the TG sidewall spacer positive trapped charge and, with less influence, the TG channel shallow trench isolation (STI) trapped charge. The different FWC evolutions with TID presented here are in very good agreement with a recently proposed analytical model. This work also demonstrates that the peripheral STI is not responsible for the observed degradations and thus that the enclosed layout TG design does not improve the radiation hardness of PPD CIS. The results of this study also lead to the conclusion that the TG OFF voltage bias during irradiation has no influence on the radiation effects. Alternative design and process solutions to improve the radiation hardness of PPD CIS are discussed.

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“…In the presence of a significant electric field, the deep trap level emits more charge carriers, so its generation rate increases. The influence of the electric field in the vicinity of a deep trap level has been described for the first time by J. Frenkel 7 and the electric field enhanced generation (EFEG) phenomena are often cited to explain high dark current events in image sensors 2,6,[8][9][10][11][12][13] . To our knowledge, except the paper from Bogaerts et al 10 which proposed a combination between a 1D and 3D EFEG model, the EFEG mechanisms are often described with a one dimensional approach 6,9,14 in the literature.…”

Section: Introductionmentioning

confidence: 99%

Influence of a 3D electric field enhancement model on the Monte Carlo calculation of the dark current in pixel arrays

Lemiere

Inguimbert

Nuns

2020

Journal of Applied Physics

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A new three-dimensional electric field enhanced generation model has been developed to describe the electric field effects on the thermal electron-hole pair generation rate. The originality of this model lies on the full threedimensional description of the synergetic mechanism between the Poole-Frenkel barrier lowering and the Phonon-Assisted Tunneling mechanism. To do this, a classical 1D model has been integrated over all possible directions of emission of the carriers. The 3D model has been implemented in a Monte Carlo tool devoted to the simulation of the dark current increase induced by radiations in image sensors. Our three-dimensional simulation has been compared to one-dimensional electric field effects simulations and experimental data found in the literature in the context of gold contamination. The consequence of using a three-dimensional electric field enhanced generation (EFEG) model is the reduction of the dispersive effect on the dark current distribution of the electric field: hence each dark current peak is narrower and shows higher peak's amplitude. The threedimensional model needs to slightly change the cross section parameters used for a 1D EFEG case to keep a realistic description of each dark current peak of the histogram. In the rest of the paper, we extended our work on constraints relative to space applications. The histograms of the simulated dark current taking into account one and three dimensional electric field enhancement effects have been estimated and compared to experimental data acquired after a proton irradiation at room temperature. The use of a three-dimensional model tends to give a more realistic prediction of the dark current non uniformity in an irradiated pixel array.

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Gamma and Proton-Induced Dark Current Degradation of 5T CMOS Pinned Photodiode $0.18~\mu\hbox{m}$ CMOS Image Sensors

Cited by 6 publications

References 31 publications

Multi-MGy Radiation Hard CMOS Image Sensor: Design, Characterization and X/Gamma Rays Total Ionizing Dose Tests

Multi-MGy Radiation Hard CMOS Image Sensor: Design, Characterization and X/Gamma Rays Total Ionizing Dose Tests

Influence of Transfer Gate Design and Bias on the Radiation Hardness of Pinned Photodiode CMOS Image Sensors

Influence of a 3D electric field enhancement model on the Monte Carlo calculation of the dark current in pixel arrays

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