Gallium oxide films deposition by RF magnetron sputtering; a detailed analysis on the effects of deposition pressure and sputtering power and annealing

Mobtakeri, Soheil; Akaltun, Yunus; Özer, Ali; Kılıç, Merhan; Tüzemen, Ebru Şenadım; Gür, Emre

doi:10.1016/j.ceramint.2020.08.289

Cited by 40 publications

(16 citation statements)

References 25 publications

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“…Figure a shows the measured bandgap ( E g ) data plotted as a function indium fraction ( x ) in (In x Ga 1– x ) 2 O 3 . The values we measured for pure In 2 O 3 (3.30 eV) and Ga 2 O 3 (4.77 eV) films are in the middle of the ranges that have been reported for In 2 O 3 (2.9–3.6 eV , ) and Ga 2 O 3 (4.5–4.9 eV − ). The dotted curve in Figure a shows that the data are nicely fit between the pure compound limits by an expression that considers band bowing during alloying (eq ).…”

supporting

confidence: 62%

“…A recent modeling paper by Dive et al suggested that the materials in the In 2 O 3 –Ga 2 O 3 system could possibly be a second potential candidate materials system for CdTe emitter fabrication . Although the component oxides, In 2 O 3 and Ga 2 O 3 , have bandgaps between 2.9 and 3.6 eV − and 4.5–4.9 eV − and would form negative and large positive CBOs with CdTe, respectively, an alloy of composition (In x Ga 1– x ) 2 O 3 (IGO) should allow the CBO and bandgap to be continuously varied. In fact, recent numerical modeling indicates that a high efficiency emitter for CdTe should be achievable with the InGaO 3 composition with a bandgap of ∼4 eV, but no experimental work has verified the modeled results.…”

mentioning

confidence: 99%

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Indium Gallium Oxide Emitters for High-Efficiency CdTe-Based Solar Cells

Jamarkattel

Phillips

Subedi

et al. 2022

ACS Appl. Energy Mater.

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There are limited choices for front-surface, electron-selective contacts (emitters) for CdTe solar cells, thus hindering scientific and technical development. Here we investigate the photovoltaic performance of devices fabricated with (In x Ga 1−x ) 2 O 3 (IGO) emitters with varying In-to-Ga ratios prepared by cosputtering. In agreement with predictions, an IGO emitter with a 4.03 eV bandgap (x = 0.36) allowed fabrication of devices with efficiencies of 16%. Increasing the performance to higher values will be enabled by increasing the transmission through the IGO-coated substrate and decreasing the bulk and back interface recombination. These findings demonstrate IGO materials as effective emitters in highefficiency CdTe-based solar cells.

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supporting

confidence: 62%

mentioning

confidence: 99%

Indium Gallium Oxide Emitters for High-Efficiency CdTe-Based Solar Cells

Jamarkattel

Phillips

Subedi

et al. 2022

ACS Appl. Energy Mater.

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“…where λ, β, and θ are the X-ray wavelength, the FWHM of the most intense peak, and the Bragg diffraction angle, respectively. 56 The following eq 8 was also used to calculate the amount of lattice dislocation density: 57…”

Section: β-Ga 2 O 3 Depositionmentioning

confidence: 99%

Ultrahigh Performance of β-Ga₂O₃-Based MSM Solar-Blind Photodetectors Fabricated via the Glancing Angle Deposition Technique

Yaghoubizadeh,

Eshraghi,

Hajati

et al. 2023

ACS Appl. Electron. Mater.

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Glancing angle deposition (GLAD) is a simple, cost-effective, and mask-free method for fabricating microstructures by controlling the morphological structure. In this study, we investigated the effect of the deposition angle on the growth of nanorod structures on P−Si (100) and quartz substrates using the RF-sputtering method. The X-ray diffraction (XRD) patterns of samples fabricated at various deposition angles of 0°, 45°, and 65°reveal the monoclinic structure of β-Ga 2 O 3 . As the flux angle of the sputtered atoms increased, the intensity and width of the (−110), (−202), and (111) planes decreased, while the intensity of the (−111) plane increased. Moreover, the photoluminescence spectra of β-Ga 2 O 3 nanocolumns showed five Gaussian bands with center wavelengths of 390, 434, 470, 494, and 525 nm, whose intensity is strongly affected by the deposition angle due to the increased path length of incident light. The characterization results of the fabricated metal−semiconductor−metal photodetector (MSM-PD) revealed the improvement of the optical properties of the sample deposited at a 65°oblique angle, which showed a responsivity of 95.28 A/W, a detectivity of 2.51 × 10 13 Jones, a quantum efficiency of 4.8 × 10 4 %, and a rise time of 44 ms for UVC light.

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“…The integrated pulse energy, time of deposition, pressure in the chamber, plasma gas, target-to-substrate angle, and substrate temperature are all crucial elements in diminishing dopant redistribution and defect creation during high-temperature processing. There are several types of high-quality thin films, such as boron carbon nitride [68], aluminum oxide [75], gallium oxide [76], and others [77], deposited via the magnetron sputtering technique [67]. For readers interested in the history of the thin-film sputter deposition process, we recommend consulting the reference [78].…”

Section: B Sputtering Techniquesmentioning

confidence: 99%

Optical Thin Films Fabrication Techniques—Towards a Low-Cost Solution for the Integrated Photonic Platform: A Review of the Current Status

et al. 2022

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In the past few decades, several methods concerning optical thin films have been established to facilitate the development of integrated optics. This paper provides a brief depiction of different techniques for implementing optical waveguide thin films that involve chemical, physical, and refractive index modification methods. Recent advances in these fabrication methods are also been presented. Most of the methods developed for the realization of the thin-films are quite efficient, but they are expensive and require sophisticated equipment. The major interest of the scientists is to develop simple and cost-effective methods for mass production of optical thin films resulting in the effective commercialization of the waveguide technology. Our research group is focused on developing a silica-titania optical waveguide platform via the sol-gel dip-coating method and implementing active and passive optical elements via the wet etching method. We are also exploring the possibility of using nanoimprint lithography (NIL) for patterning these films so that the fabrication process is efficient and economical. The recent developments of this platform are discussed. We believe that silica-titania waveguide technology developed via the sol-gel dip-coating method is highly attractive and economical, such that it can be commercialized for applications such as sensing and optical interconnects.

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Gallium oxide films deposition by RF magnetron sputtering; a detailed analysis on the effects of deposition pressure and sputtering power and annealing

Cited by 40 publications

References 25 publications

Indium Gallium Oxide Emitters for High-Efficiency CdTe-Based Solar Cells

Indium Gallium Oxide Emitters for High-Efficiency CdTe-Based Solar Cells

Ultrahigh Performance of β-Ga₂O₃-Based MSM Solar-Blind Photodetectors Fabricated via the Glancing Angle Deposition Technique

Optical Thin Films Fabrication Techniques—Towards a Low-Cost Solution for the Integrated Photonic Platform: A Review of the Current Status

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Gallium oxide films deposition by RF magnetron sputtering; a detailed analysis on the effects of deposition pressure and sputtering power and annealing

Cited by 40 publications

References 25 publications

Indium Gallium Oxide Emitters for High-Efficiency CdTe-Based Solar Cells

Indium Gallium Oxide Emitters for High-Efficiency CdTe-Based Solar Cells

Ultrahigh Performance of β-Ga2O3-Based MSM Solar-Blind Photodetectors Fabricated via the Glancing Angle Deposition Technique

Optical Thin Films Fabrication Techniques—Towards a Low-Cost Solution for the Integrated Photonic Platform: A Review of the Current Status

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Product

Resources

About

Ultrahigh Performance of β-Ga₂O₃-Based MSM Solar-Blind Photodetectors Fabricated via the Glancing Angle Deposition Technique