Gallium arsenide Schottky power rectifiers

Baliga, B. Jayant; Sears, A.R.; Barnicle, M.M.; Campbell, Paul M.; Garwacki, W.; Walden, J.P.

doi:10.1109/t-ed.1985.22085

Cited by 29 publications

(3 citation statements)

References 3 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…This analysis indicated a 13.7-times improvement by replacing silicon with gallium arsenide. Based upon this projection, GaAs power devices with high performance were developed at GE in the 1980s [7,8]. Subsequently, GaAs Schottky power rectifiers with breakdown voltage of 200 V became commercially available from several companies by leveraging this work.…”

Section: Introductionmentioning

confidence: 99%

Gallium nitride devices for power electronic applications

Baliga

2013

Semicond. Sci. Technol.

525

264

View full text Add to dashboard Cite

Recent success with the fabrication of high-performance GaN-on-Si high-voltage HFETs has made this technology a contender for power electronic applications. This paper discusses the properties of GaN that make it an attractive alternative to established silicon and emerging SiC power devices. Progress in development of vertical power devices from bulk GaN is reviewed followed by analysis of the prospects for GaN-on-Si HFET structures. Challenges and innovative solutions to creating enhancement-mode power switches are reviewed.

show abstract

Section: Introductionmentioning

confidence: 99%

Gallium nitride devices for power electronic applications

Baliga

2013

Semicond. Sci. Technol.

525

264

View full text Add to dashboard Cite

show abstract

“…Schottky junctions have the characteristics of high frequency, low power consumption and high speed, and thus are important devices in electronics and optoelectronics [2], such as metal semiconductor field effect * Authors to whom any correspondence should be addressed. transistors (FETs) [3], rectifiers [4,5], photodetectors [6], etc. Therefore, it is very important to study and understand the properties of the metal-semiconductor interface for better interface tailoring engineering and design.…”

Section: Introductionmentioning

confidence: 99%

Interface effects of Schottky devices built from MoS₂ and high work function metals

Zhen

Weng

et al. 2022

J. Phys.: Condens. Matter

View full text Add to dashboard Cite

Schottky junctions, formed by high work function metals and semiconductors, are important devices in electronics and optoelectronics. The metal deposition in traditional Schottky interfaces usually damages the semiconductor surface and causes defect states, which reduces the Schottky barrier height and device performance. This can be avoided in the atomically smooth interface formed by two-dimensional (2D) metals and semiconductors. For better interface tailoring engineering, it is particularly important to understand various interface effects in such 2D Schottky devices under critical or boundary conditions. Here we report the fabrication and testing of three types of MoS2 devices, i.e., using PtTe2, Cr and Au as contact materials. While the Cr/MoS2 contact is an ohmic contact, the other two are Schottky contacts. The van-der-Waals interface of PtTe2-MoS2 results in a well-defined OFF state and a significant rectification ratio of 104. This parameter, together with an ideality factor 2.1, outperforms the device based on evaporated Au. Moreover, a device in the intermediate condition is also presented. An abrupt increase in the reverse current is observed and understood based on the enhanced tunneling current. Our work manifests the essential role of doping concentration and provides another example for 2D Schottky interface design.

show abstract

“…In addition, these materials provide improved electronic transport due to higher mobilities, wider band gap and higher peak electrical ®eld strength at breakdown. The only material mature enough technologically and superior to Si is GaAs [1]. Epitaxial structures of GaAs with low-doped and thick enough epi-layers to obtain a reasonably high breakdown voltage are available, and dierent types of metal for the formation of Schottky barrier (SB) diodes deposition have been developed by several authors [1,3,9±13].…”

Section: Introductionmentioning

confidence: 99%

Breakdown characteristics of MOVPE grown Si-doped GaAs Schottky diodes

Hudait

Krupanidhi

1999

Solid-State Electronics

View full text Add to dashboard Cite

The breakdown characteristics of Au/n-GaAs Schottky contacts on metal-organic vapor-phase epitaxy grown Sidoped n-GaAs were measured in the doping range of 6 Â 10 15 ±1.5 Â 10 18 cm À3 . These results are compared with the experimentally measured breakdown voltages by several workers and also with the theoretical calculation predicted by Sze and Gibbons [Sze SM, Gibbons G. Appl. Phys. Lett. 1966;8:111]. Good agreement was observed between the measured data and the breakdown voltages by Sze and Gibbons in the high doping concentrations. The maximum depletion layer width is found to be in good agreement with the theoretical analysis by Sze and Gibbons. The breakdown voltage at higher doping concentration will be useful for the design and development of GaAs switching devices and the emitter-base region of bipolar transistors. #

show abstract

Gallium arsenide Schottky power rectifiers

Cited by 29 publications

References 3 publications

Gallium nitride devices for power electronic applications

Gallium nitride devices for power electronic applications

Interface effects of Schottky devices built from MoS₂ and high work function metals

Breakdown characteristics of MOVPE grown Si-doped GaAs Schottky diodes

Contact Info

Product

Resources

About

Gallium arsenide Schottky power rectifiers

Cited by 29 publications

References 3 publications

Gallium nitride devices for power electronic applications

Gallium nitride devices for power electronic applications

Interface effects of Schottky devices built from MoS2 and high work function metals

Breakdown characteristics of MOVPE grown Si-doped GaAs Schottky diodes

Contact Info

Product

Resources

About

Interface effects of Schottky devices built from MoS₂ and high work function metals