Breakdown characteristics of MOVPE grown Si-doped GaAs Schottky diodes

Abstract

The breakdown characteristics of Au/n-GaAs Schottky contacts on metal-organic vapor-phase epitaxy grown Sidoped n-GaAs were measured in the doping range of 6 Â 10 15 ±1.5 Â 10 18 cm À3 . These results are compared with the experimentally measured breakdown voltages by several workers and also with the theoretical calculation predicted by Sze and Gibbons [Sze SM, Gibbons G. Appl. Phys. Lett. 1966;8:111]. Good agreement was observed between the measured data and the breakdown voltages by Sze and Gibbons in the high doping concentrations. The maximum depletion layer width is found to be in good agreement with the theoretical analysis by Sze and Gibbons. The breakdown voltage at higher doping concentration will be useful for the design and development of GaAs switching devices and the emitter-base region of bipolar transistors. #

Doping dependence of the barrier height and ideality factor of Au/n-GaAs Schottky diodes at low temperatures

“…In the case of depletion type MESFETs, the performance is determined by the reverse bias voltage, which decreases very sharply with the doping concentration. In our earlier work [29], we showed that the reverse bias breakdown voltage decreased below 2.8 V when the doping concentration increased to N d > 1 Â 10 18 cm À3 . Therefore, there is a technological importance in studying the barrier height and ideality factor as a function of doping concentration.…”