Gain Investigation for commercial GaAs and SiGe HBT LNA's under Electron irradiation

Youssouf, Abdouraouf Said; Habaebi, Mohamed Hadi; Ibrahim, Siti Noorjannah; Hasbullah, Nurul Fadzlin

doi:10.1109/scored.2016.7810094

Cited by 9 publications

(5 citation statements)

References 13 publications

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“…Finally, the recorded increase in collector current, despite constant base bias current, may be attributed to various effects. It may be attributed to increased effective base current as a result of trapped charges between the emitter-base junction [8] [13]. The sudden increase (as observed in Fig 12) under moderate damage, however, is contrary to the gradual degradation observed in other performance parameters.…”

Section: Resultsmentioning

confidence: 86%

“…The data would indicate very limited open sources data in electron radiation effect on mm-wave LNAs. In [13], where electron irradiation is investigated, NF degradation data is not provided, nor is the FoM. It is, however, interesting to note the severe gain degradation observed under electron radiation > 10 Mrad(Si), both in this work and in [13], while SiGe's resilience to irradiation in [19] is only discussed in terms of gamma, neutron and proton radiation.…”

Section: Resultsmentioning

confidence: 92%

“…According to [12], the increased noise figure in the reported 60 GHz LNA is due to increased rb, while the increase in the output reflection was associated to proton effect on microstrip transmission lines following 63.3-MeV proton exposure. The data in [13] indicates up to 94 % reduction in |S21|, following electron irradiation at S-band. It is important to note that V-band LNAs in 3rd generation 130 nm BiCMOS are not included in these studies.…”

Section: Introductionmentioning

confidence: 95%

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Effect of TID electronradiation on SiGe BiCMOS LNAs at V-band

Minko

Stander

2020

Microelectronics Reliability

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Section: Resultsmentioning

confidence: 86%

Section: Resultsmentioning

confidence: 92%

Section: Introductionmentioning

confidence: 95%

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Effect of TID electronradiation on SiGe BiCMOS LNAs at V-band

Minko

Stander

2020

Microelectronics Reliability

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“…The forward current gain ( / I I C B ) of the designed device obtained is about 500. The gain is higher than that previously reported [1,[39][40][41]. The device with high gain is of interest for ensuring the effective operation of the SiGe HBT within an amplification circuit [42][43][44].…”

Section: Sige Hbt Structure and Physical Modelsmentioning

confidence: 77%

Simulation and analysis of inverse-mode operation of single event transient mechanisms on NPN-SiGe HBT

Adekoya,

Liu,

Wang

et al. 2024

Phys. Scr.

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This paper presents single-event transient (SET) mechanisms on a 3D NPN-SiGe HBT structure using Silvaco TCAD simulations under three conditions. The three conditions were the linear energy transfer (LET), striking angle, and bias voltage. A three-dimensional (3D) structure of the NPN-SiGe HBT was built on the DevEdit simulator and simulated on Deckbuild using device and radiation effect simulations. The length, breadth, and height of the structure were; 6.0 µm, 4.55 µm, and 2.5 µm, with doping concentrations of cm3 and cm3. The results obtained show that the TCAD simulation on the three conditions significantly influences the trends of heavy ion transient current and collected charge. The results reveal that the increased collected charge and wider pulse width result from the bipolar amplification effect. The drift and diffusion mechanisms also influence the increase in the emitter current as the ion loses energy along the trajectory path.

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“…To address the challenges and explore the capability of the 23-GHz solution, this work presents a high-efficiency and low-NF TX/LNA FEM, implemented in a 130-nm SiGe BiCMOS process for its high gain and built-in radiation resistivity [16], [17], [18]. The proposed TX/LNA FEM is designed to be compact in order to minimize the overall cost.…”

Section: Circuit-level Solutionsmentioning

confidence: 99%

A 23-GHz TX/LNA Front-End Module for Inter-Satellite Links With 27.8% Peak Efficiency in the TX Path and 3.1-dB NF in the RX Path

Ding,

Vidojkovic,

Milosevic

et al. 2024

IEEE J. Solid-State Circuits

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This article presents a 23-GHz transmitter/lownoise amplifier (TX/LNA) front-end module (FEM) in 130-nm SiGe BiCMOS for inter-satellite links (ISLs) in the system of orbiting low-frequency antenna array (OLFAR). The FEM consists of an LNA, a power amplifier (PA), a variable-gain amplifier (VGA), a phase shifter (PS), and a TX/receiver switch (T/R SW). By applying the combination of different techniques: 1) multi-function block design strategy; 2) current reuse and g m boosting implemented by a triple-coil transformer in the LNA; 3) dual-LC-tank-based integrated T/R SW, a compact FEM is achieved, simultaneously with an advanced-state-of-theart efficiency in the TX path and a competitive noise figure (NF) in the receiver (RX) path. In the TX path, it demonstrates a measured saturated output power (P sat ) of 16.8 dBm, a peak TX efficiency of 27.8%, and a 34.1-dB gain. It supports 900-Mbps 64-QAM signals with 4.9% error vector magnitude (EVM) and −27.5-dBc adjacent channel power ratio (ACPR), at 9.0-dBm output power (P out ) with 8.8% TX efficiency. In the RX path, an NF of 3.1 dB and an input 1-dB compression point (IP 1 dB ) of −19.4 dBm are achieved with a 19.3-dB gain and a 10-mW power consumption. The core chip area is 1.11 × 0.48 mm.

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Gain Investigation for commercial GaAs and SiGe HBT LNA's under Electron irradiation

Cited by 9 publications

References 13 publications

Effect of TID electronradiation on SiGe BiCMOS LNAs at V-band

Effect of TID electronradiation on SiGe BiCMOS LNAs at V-band

Simulation and analysis of inverse-mode operation of single event transient mechanisms on NPN-SiGe HBT

A 23-GHz TX/LNA Front-End Module for Inter-Satellite Links With 27.8% Peak Efficiency in the TX Path and 3.1-dB NF in the RX Path

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