Gain and bandwidth of fast near-infrared photodetectors: A comparison of diodes, phototransistors, and photoconductive devices

Beneking, H.

doi:10.1109/t-ed.1982.20892

Cited by 51 publications

(10 citation statements)

References 8 publications

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“…In other words, decreased ΔN 0 with increased N D is compensated by increased ΔN 0 with increased N . This is the reason why the greater the N D , the closer the N 1 p to N D .For the same reasons, non-monotonic dependence τ p on N cancels out, as shown above (Figure 3b), at N D > 2 × (θ × p t ) 2 / n t (increased ΔN 0 with increasing N is not able to compensate decreas-ing ΔN 0 with increasing N D ).Non-monotonic character of dependence τ p on N does not occur and at low concentrations N D {see inequities(27), expressions(22), andFigure 3b}, when equilibrium electron population at recombination level is determined mostly by electron-hole transitions between that level and free bands. In this case, values δ cannot provide prevailing growth of hole thermal emission rate from nonequilibrium centers over the growth of capture rate of nonequilibrium holes at equilibrium hole traps with increasing N .Maximal value of ratioK p ≡ τ p / τ ̮…”

supporting

confidence: 60%

“…It was first reported in [20] that vanishing μ(N ) in points of maximal extremum of dependences τ n (N ) and τ p (N ) allows avoiding highly undesirable effect -saturation of G in intrinsic photoconductors, when applied bias voltage V increases [5,9,18,19,21,22]. As is known [19], this disadvantage is the most evident in photoconductors with sweep-out effect on contact electrodes, i.e., when relations (1) are fulfilled.…”

Section: Preliminariesmentioning

confidence: 99%

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The Theory of Giant Splash of Photoresponse in Semiconductors at Low-Level Illumination with Increasing Concentration of Deep Recombination Impurity

Kholodnov¹,

Nikitin²

2015

Optoelectronics - Materials and Devices

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Recombination of excess nonequilibrium electrons and holes in semiconductors through impurity recombination centers traps known as trap-assisted ShockleyRead-Hall recombination is in many cases the dominant process. In this chapter, we develop the general theory of trap-assisted recombination and study in detail two key characteristics dependences of excess charge carriers' lifetime and photoelectric gain on concentration N of recombination centers and effectiveness of band-toband photoexcitation of charge carriers and photo-emf in semiconductors at low-level illumination considered outside quasi-neutrality approximation.

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supporting

confidence: 60%

Section: Preliminariesmentioning

confidence: 99%

The Theory of Giant Splash of Photoresponse in Semiconductors at Low-Level Illumination with Increasing Concentration of Deep Recombination Impurity

Kholodnov¹,

Nikitin²

2015

Optoelectronics - Materials and Devices

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“…Modern field-effect phototransistors demonstrate the gain values of 10 2 -10 3 with the operating bandwidth of ~ 10 6 Hz [56,57]. In phototransistor, the electron-hole pairs are generated in the gate volume and may be transferred via thermionic or tunneling effects to the high-mobility source-drain channel.…”

Section: Hybrid Qd-2d Conductor Phototransistorsmentioning

confidence: 99%

High-response hybrid quantum dots- 2D conductor phototransistors: recent progress and perspectives

et al. 2017

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Abstract:Having been inspired by the tremendous progress in material nanoscience and device nanoengineering, hybrid phototransistors combine solution processed colloidal semiconductor quantum dots (QDs) with graphene or two-dimensional (2D) semiconductor materials. Novel detectors demonstrate ultrahigh photoconductive gain, high and selective photoresponse, low noise, and very high responsivity in visible-and near-infrared ranges. The outstanding performance of phototransistors is primarily due to the strong, selective, and size tunable absorption of QDs and fast charge transfer in 2D high mobility conductors. However, the relatively small mobility of QD nanomaterials was a technological barrier, which limited the operating rate of devices. Very recent innovations in detector design and significant progress in QD ligand engineering provide effective tools for further qualitative improvements. This article reviews the recent progress in material science, nanophysics, and device engineering related to hybrid phototransistors. Detectors based on various QD nanomaterials and several 2D conductors are compared, and advantages and disadvantages of various nanomaterials for applications in hybrid phototransistors are identified. We also benchmark the experimental characteristics with model results that establish interrelations and tradeoffs between detector characteristics, such as responsivity, dark and noise currents, the photocarrier lifetime, response, and noise bandwidths. We have shown that the most recent phototransistors demonstrate performance limited by the fundamental generation recombination noise in high gain devices. Interrelation between the dynamic range of the detector and the detector sensitivity is discussed. The review is concluded with a brief discussion of the remaining challenges and possible significant improvements in the performance of hybrid phototransistors.

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“…To achieve this goal, a trade-off between minimizing transit time and RC time delay is required. The total response time, , can be determined by combining carrier transit time tr and RC time, RC 16,19,22,23 …”

Section: Resultsmentioning

confidence: 99%

Design of Transparent Indium Tin Oxide-Based Interdigitated Fingers for Metal Semiconductor Metal Photodetector

Jang¹,

Ren²,

Emanetoglu

et al. 2007

J. Electrochem. Soc.

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We report on the optimum geometric design of In 0.53 Ga 0.47 As metal-semiconductor-metal ͑MSM͒ photodetectors for maximizing external quantum efficiency with transparent indium tin oxide ͑ITO͒-based interdigitated fingers. Both ITO finger and conventional metal finger MSM photodetectors were fabricated to verify the simulated external quantum efficiency and good agreement between experimental and simulated results was obtained. In all cases, the ITO provided higher efficiencies, particularly at short finger gap spacings.There has been strong recent interest in transparent conducting oxides ͑TCOs͒ for optical device applications. Among the various possible TCOs, indium tin oxide ͑ITO͒ is commonly used as a contact for transparent electrodes due to its excellent properties in transmittance, electrical conductivity, substrate adhesion, hardness, and chemical inertness. 1-8 A variety of ITO deposition techniques have been reported, including electron-beam evaporation, 9 dc or radio frequency ͑rf͒ sputtering, 10 reactive ion plating, 11 chemical vapor deposition, 12 and pulsed laser deposition. 13 ITO has been used for interdigitated finger electrodes on metalsemiconductor-metal photodetectors ͑MSM͒, improving the photon responsivity by minimizing blocking of incoming light by the finger electrodes. 14 However, studies of the optimal geometric design of transparent ITO finger MSM photodetectors have not been reported to date. The optimized designs employed for the more conventional metal-based interdigitated fingers 15,16 are not suitable for the ITObased transparent contacts due to the absence of shadowing effects in the latter case.In this paper, we present a study of the effects of using ITO as the interdigitated electrodes for InGaAs-based MSM photodectors in terms of both external quantum efficiency and response time. InGaAs-based MSM photodectors with conventional metal and transparent ITO interdigitated electrodes were fabricated with various configurations to verify the simulation results. ExperimentalThe InGaAs MSM photodetector structure consisted of 150 Å of InAlAs as a Schottky enhancement layer, a 230 Å In͑Ga,Al͒As graded layer, a 1.0 m InGaAs absorption layer, and a 0.3 m InAlAs buffer layer grown on a semi-insulating InP/Fe substrate with a molecular beam epitaxy system ͑MBE͒. 17 The device fabrication started with a blanket deposition of SiN x using a low-power plasma-enhanced chemical vapor deposition ͑PECVD͒ system. Buffered oxide etch ͑BOE͒-based wet chemical etching was used for opening the interdigitated finger contact window. A 200 Å Ti/1800 Å Au deposition with an electron-beam evaporator was used for the contacts to the conventional-metal-based interdigitated electrode devices. For the devices with transparent ITO fingers, 2000 Å ITO was deposited with a plasma-assisted rf sputtering system using Ar/3% O 2 discharges at a pressure of 4 mTorr and 125 W of rf power ͑13.56 MHz͒. The sputtering target for the ITO was a composite target consisting of 90% In 2 O 3 and 10% SnO 2 . The testing contact...

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Gain and bandwidth of fast near-infrared photodetectors: A comparison of diodes, phototransistors, and photoconductive devices

Cited by 51 publications

References 8 publications

The Theory of Giant Splash of Photoresponse in Semiconductors at Low-Level Illumination with Increasing Concentration of Deep Recombination Impurity

The Theory of Giant Splash of Photoresponse in Semiconductors at Low-Level Illumination with Increasing Concentration of Deep Recombination Impurity

High-response hybrid quantum dots- 2D conductor phototransistors: recent progress and perspectives

Design of Transparent Indium Tin Oxide-Based Interdigitated Fingers for Metal Semiconductor Metal Photodetector

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