Vertical geometry Ni/Au-b-Ga 2 O 3 Schottky rectifiers were fabricated on Hydride Vapor Phase Epitaxy layers on conducting bulk substrates, and the rectifying forward and reverse current-voltage characteristics were measured at temperatures in the range of 25-100 C. The reverse breakdown voltage (V BR) of these b-Ga 2 O 3 rectifiers without edge termination was a function of the diode diameter, being in the range of 920-1016 V (average value from 25 diodes was 975 6 40 V, with 10 of the diodes over 1 kV) for diameters of 105 lm and consistently 810 V (810 6 3 V for 22 diodes) for a diameter of 210 lm. The Schottky barrier height decreased from 1.1 at 25 C to 0.94 at 100 C, while the ideality factor increased from 1.08 to 1.28 over the same range. The figure-of-merit (V BR 2 192101-3 Yang et al.

The robust radiation resistance of wide-band gap materials is advantageous for space applications, where the high-energy particle irradiation deteriorates the performance of electronic devices. We report on the effects of proton irradiation of β-GaO nanobelts, whose energy band gap is ∼4.85 eV at room temperature. Back-gated field-effect transistor (FET) based on exfoliated quasi-two-dimensional β-GaO nanobelts were exposed to a 10 MeV proton beam. The proton-dose- and time-dependent characteristics of the radiation-damaged FETs were systematically analyzed. A 73% decrease in the field-effect mobility and a positive shift of the threshold voltage were observed after proton irradiation at a fluence of 2 × 10 cm. Greater radiation-induced degradation occurs in the conductive channel of the β-GaO nanobelt than at the contact between the metal and β-GaO. The on/off ratio of the exfoliated β-GaO FETs was maintained even after proton doses up to 2 × 10 cm. The radiation-induced damage in the β-GaO-based FETs was significantly recovered after rapid thermal annealing at 500 °C. The outstanding radiation durability of β-GaO renders it a promising building block for space applications.

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