GaAs planar doped barrier diodes for millimetre-wave detector applications

Kearney, M. J.; Condie, A.; Dale, I.

doi:10.1049/el:19910448

Cited by 32 publications

(14 citation statements)

References 4 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Furthermore, Schottky diodes have considerable 1/ f noise under bias condition [3]. Therefore, several types of zero-bias detectors have been proposed [4]- [7]. In these detectors, GaSb-based backward diodes have particularly high sensitivity [8]- [11].…”

Section: Introductionmentioning

confidence: 99%

Sensitivity Improvement in GaAsSb-Based Heterojunction Backward Diodes by Optimized Doping Concentration

Takahashi

Sato

Nakasha

et al. 2015

IEEE Trans. Electron Devices

View full text Add to dashboard Cite

An impedance-matched voltage sensitivity (β v,opt ) of 20 400 V/W at 94 GHz was achieved at zero bias and room temperature using heterojunction backward diodes that were based on a p + -GaAsSb/i-InAlAs/n-InGaAs that was lattice matched to an InP substrate. Doping concentrations in the diodes were adjusted to optimize the sensitivity and its nonlinear characteristic. The proper donor doping concentration in n-InGaAs to increase its sensitivity was determined to be 1×10 18 cm −3 . Meanwhile, the proper acceptor doping concentration in a p-GaAsSb layer was 5 × 10 18 cm −3 to achieve a large nonlinearity as a curvature coefficient (γ ) of −49.4 V −1 , which exceeded that of ideal Schottky diode. The dependence of doping concentration on noise performance was also considered. The lattice-matched GaAsSb-based backward diodes are applicable in millimeter wave detectors and mixers.Index Terms-Backward diode, GaAsSb, interband tunneling, lattice match, millimeter wave, nonlinearity, sensitivity, zero bias.

show abstract

Section: Introductionmentioning

confidence: 99%

Sensitivity Improvement in GaAsSb-Based Heterojunction Backward Diodes by Optimized Doping Concentration

Takahashi

Sato

Nakasha

et al. 2015

IEEE Trans. Electron Devices

View full text Add to dashboard Cite

show abstract

“…Several device technologies have been demonstrated that offer good millimeter-wave direct-detection properties, including low-barrier Schottky diodes 4,5 , planar-doped barrier diodes 6 , and Sb-based heterostructure backward tunnel diodes (HBDs). Among semiconductor-based detector technologies, Sb-based HBDs offer some unique features and potential advantages.…”

Section: Introductionmentioning

confidence: 99%

High-performance heterostructure backward diode detectors

Fay

Zhang

2011

SPIE Proceedings

View full text Add to dashboard Cite

The combination of atmospheric propagation windows and notches, in conjunction with the rich spectral signatures of many materials in the millimeter-wave through THz region of the electromagnetic spectrum, make sensing and imaging in this spectral range of particular interest in security, defense, and medical spheres. For sensing and imaging systems, high-sensitivity and low-noise detectors are key components; micro-and nano-scale devices are especially promising for detectors since small device scales naturally lead to lower device capacitances (and thus increased operational frequency) while the exploitation of quantum mechanical tunneling at the nanoscale offers significant potential for improving intrinsic detector performance. We report recent developments in InAs/AlSb/GaSb heterostructure backward tunnel diodes for millimeter-wave through THz detection and imaging applications. These devices have demonstrated measured room-temperature curvatures of 47 V -1 , exceeding the fundamental limitation of q/kT=38.5 V -1 for Schottky diodes. Since detector sensitivity is proportional to curvature, these increases in curvature translate to improved sensitivity; unmatched sensitivities of 4600 V/W at 94 GHz have been measured, and sensitivities of nearly 50,000 V/W are projected under conjugately-matched conditions. These devices also offer extremely low noise performance; we report projected NEP values below 0.2 pW/Hz 1/2 at 94 GHz for conjugately-matched detectors. A challenging issue in the design of optimized interband tunneling-based devices is the difficulty in accurately simulating and modeling the devices. We have developed a numerical model based on self-consistent solution of the Poisson/Schrodinger equations coupled with 8-band k•p band structure and transfer-matrix calculations that agrees well with experimental device results and enables projection of performance for novel structures. This simulation framework suggests several promising avenues for further device performance improvement, and provides a means to optimize detector performance for applications.

show abstract

“…Commercial planar doped barrier diodes are available that have frequency response up to 50 GHz, and some diodes have been developed with response up to 94 GHz. 18 Therefore, our device can potentially be used to monitor the envelopes of high repetition rate optical pulse trains without the use of expensive high-speed sampling oscilloscopes. The observed rise time of the signal, of the order of 30 ns, is determined by the AOM bandwidth.…”

mentioning

confidence: 99%

A contactless microwave-based diagnostic tool for high repetition rate laser systems

Braggio

Borghesani

2014

Review of Scientific Instruments

View full text Add to dashboard Cite

We report on a novel electro-optic device for the diagnostics of high repetition rate laser systems. It is composed of a microwave receiver and of a second order nonlinear crystal, whose irradiation with a train of short laser pulses produces a time-dependent polarization in the crystal itself as a consequence of optical rectification. This process gives rise to the emission of microwave radiation that is detected by a receiver and is analyzed to infer the repetition rate and intensity of the pulses. We believe that this new method may overcome some of the limitations of photodetection techniques.

show abstract

GaAs planar doped barrier diodes for millimetre-wave detector applications

Cited by 32 publications

References 4 publications

Sensitivity Improvement in GaAsSb-Based Heterojunction Backward Diodes by Optimized Doping Concentration

Sensitivity Improvement in GaAsSb-Based Heterojunction Backward Diodes by Optimized Doping Concentration

High-performance heterostructure backward diode detectors

A contactless microwave-based diagnostic tool for high repetition rate laser systems

Contact Info

Product

Resources

About