(Ga,Mn)As: A new diluted magnetic semiconductor based on GaAs

Ohno, Hiroshi; Shen, Aidong; Matsukura, F.; Oiwa, A.; Endo, Akira; Katsumoto, Shingo; Iye, Yasuhiro

doi:10.1063/1.118061

Cited by 2,333 publications

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“…The details of growth were described elsewhere [11,15,19,24,25]. Since the times of the pioneering work for InMnAs [10,11], the other systems such as GaMnAs [15,19], GaFeAs [26], and GaMnSb [27] were also obtained. So far, the most popular III-V DMS are InMnAs and GaMnAs.…”

Section: Methodsmentioning

confidence: 99%

“…Tuning the growth conditions it is possible to have epilayers with the same Mn content x, but very different carrier concentrations [17]. The details of this problem were discussed elsewhere [11,15,19,24,25]. Typically, the carrier concentration is closely related to the Mn concentration, since Mn acts as an acceptor.…”

Section: Transport Propertiesmentioning

confidence: 99%

“…For a long time these materials were unavailable, since it was not possible to obtain III-V crystals with a reasonable concentration of magnetic ions. Only the application of MBE methods resulted in crystals with few molar percent of Mn [10][11][12][13][14][15][16][17][18][19][20][21][22]. Both quasi 3D epilayers, as well as quantum structures were obtained [18].…”

Section: Introductionmentioning

confidence: 99%

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Diluted Magnetic III-V Semiconductors

Twardowski

2000

Acta Phys. Pol. A

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During recent years diluted magnetic semiconductors based on III-V compounds have been of considerable interest. In this respect we review the basic properties of these materials, which are nearly exclusively Mn-based systems, such as GaMnAs, InMnAs, GaMnSb, and GaN:Mn. We discuss the nature of Mn impurity. Different Mn centers are considered and experimental pieces of evidence suggesting the dominating role of Mn (d5 ) configuration are given. Then we analyze s, p -d exchange, together with resulting magnetooptical properties (in particular absorption edge slitting for heavily p-type GaMnAs). The coupling between Mn ions (d-d exchange) and ferromagnetic ordering observed in InMnAs and GaMnAs is the next subject. Some mechanisms responsible for this ordering are presented. Finally we discuss transport properties and some selected problems of quantum structures based on III-V diluted magnetic semiconductors.

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Section: Methodsmentioning

confidence: 99%

Section: Transport Propertiesmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Diluted Magnetic III-V Semiconductors

Twardowski

2000

Acta Phys. Pol. A

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“…D iluted Magnetic Semiconductors (DMSs) have received much attention due to their potential applications for spin-sensitive electronics (spintronics) [1][2][3][4][5] . DMS systems are produced by doping semiconductors with magnetic metal elements.…”

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confidence: 99%

New diluted ferromagnetic semiconductor with Curie temperature up to 180 K and isostructural to the ‘122’ iron-based superconductors

et al. 2013

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Diluted magnetic semiconductors have received much attention due to their potential applications for spintronics devices. A prototypical system (Ga,Mn)As has been widely studied since the 1990s. The simultaneous spin and charge doping via hetero-valent (Ga 3 þ ,Mn 2 þ ) substitution, however, resulted in severely limited solubility without availability of bulk specimens. Here we report the synthesis of a new diluted magnetic semiconductor (Ba 1 À x K x )(Zn 1 À y Mn y ) 2 As 2 , which is isostructural to the 122 iron-based superconductors with the tetragonal ThCr 2 Si 2 (122) structure. Holes are doped via (Ba 2 þ , K 1 þ ) replacements, while spins via isovalent (Zn 2 þ ,Mn 2 þ ) substitutions. Bulk samples with x ¼ 0.1 À 0.3 and y ¼ 0.05 À 0.15 exhibit ferromagnetic order with T C up to 180 K, which is comparable to the highest T C for (Ga,Mn)As and significantly enhanced from T C up to 50 K of the '111'-based Li(Zn,Mn)As. Moreover, ferromagnetic (Ba,K)(Zn,Mn) 2 As 2 shares the same 122 crystal structure with semiconducting BaZn 2 As 2 , antiferromagnetic BaMn 2 As 2 and superconducting (Ba,K)Fe 2 As 2 , which makes them promising for the development of multilayer functional devices.

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“…To circumvent the solubility problem, a non-equilibrium, low-temperature molecular-beam-epitaxy (LT-MBE) technique was employed, which led to first successful growths of (Ga,Mn)As ternary alloys with more than 1% Mn and to the discovery of ferromagnetism in these materials [1][2][3][4] . The compounds qualify as ferromagnetic semiconductors to the extent that their magnetic and other properties can be altered by the usual semiconductor electronics engineering variables, such as doping, electric fields, or light.…”

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confidence: 99%

The essential role of carefully optimized synthesis for elucidating intrinsic material properties of (Ga,Mn)As

et al. 2013

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(Ga,Mn)As is at the forefront of spintronics research exploring the synergy of ferromagnetism with the physics and the technology of semiconductors. However, the electronic structure of this model spintronics material has been debated and the systematic and reproducible control of the basic micromagnetic parameters and semiconducting doping trends has not been established. Here we show that seemingly small departures from the individually optimized synthesis protocols yield non-systematic doping trends, extrinsic charge and moment compensation, and inhomogeneities that conceal intrinsic properties of (Ga,Mn)As. On the other hand, we demonstrate reproducible, well controlled and microscopically understood semiconducting doping trends and micromagnetic parameters in our series of carefully optimized epilayers. Hand-in-hand with the optimization of the material synthesis, we have developed experimental capabilities based on the magneto-optical pumpand-probe method that allowed us to simultaneously determine the magnetic anisotropy, Gilbert damping and spin stiffness constants from one consistent set of measured data.

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(Ga,Mn)As: A new diluted magnetic semiconductor based on GaAs

Cited by 2,333 publications

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Diluted Magnetic III-V Semiconductors

Diluted Magnetic III-V Semiconductors

New diluted ferromagnetic semiconductor with Curie temperature up to 180 K and isostructural to the ‘122’ iron-based superconductors

The essential role of carefully optimized synthesis for elucidating intrinsic material properties of (Ga,Mn)As

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