Ga migration process in Au film on (100) GaAs under temperature treatment in vacuum

Bryantseva, T. A.; Lioubtchenko, Dmitri; Лопатин, В. В.

doi:10.1016/0169-4332(96)00280-2

Cited by 9 publications

(1 citation statement)

References 2 publications

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“…In this paper we present results of photometric measurements, used earlier on GaAs and Si [6][7][8] for the determination of the amount of "free" or "non-interconnected" Si and B, produced at the surface of single-crystalline silicon as a result of the RTD process. We also present additional supporting measurements on these samples using SIMS and SEM.…”

Section: Introductionmentioning

confidence: 99%

Process‐Induced Modification to the Surface of Crystalline Silicon Measured by Precise Chemical Analysis

Briantseva

Lebedeva

Lioubtchenko

et al. 2000

Interface Controlled Materials

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The Photometric Chemical Analysis technique was used to evaluate the amount of "free" noninterconnected Si atoms, produced at the surface of crystalline <100> oriented silicon by proximity Rapid Thermal Processing (RTP) using Spin-On Dopants (SOD). Secondary Ion Mass Spectroscopy (SIMS) was used to investigate the elemental composition at the silicon surface after RTP. Photometric Chemical Analysis measured quantitatively the "free" boron and phosphorus atoms that were detected by the SIMS measurement. It is shown that thermal treatments considerably change the amount of "free" silicon, boron and phosphorus atoms on the silicon surface as measured by photometry.

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Section: Introductionmentioning

confidence: 99%

Process‐Induced Modification to the Surface of Crystalline Silicon Measured by Precise Chemical Analysis

Briantseva

Lebedeva

Lioubtchenko

et al. 2000

Interface Controlled Materials

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Strong blue emission from ZnSe nanowires grown at low temperature

Zannier

Martelli²,

Grillo

et al. 2013

Physica Rapid Research Ltrs

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We report optimized photoluminescence of ZnSe nanowires grown by molecular beam epitaxy, obtained by lowering the growth temperature down to 300 °C. The low-temperature growth method has been developed using Si(111) and GaAs(111)B substrates. On the latter, vertical oriented blue-emitting nanowires have been obtained. The growth mecha- nism is discussed with the help of in-situ and ex-situ electronic and structural measurements. We also report strong blue luminescence from ZnSe nanowires grown on ITO-coated glasses, demonstrating that ZnSe nanowires are optimal candidates for transparent optoelectronics

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Effect of e-beam dose on the fractional density of Au-catalyzed GaAs nanowire growth

2016

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Using Au/GaAs as a model system, the effect of initial catalyst conditions on nanowire densities was studied. Resulting morphologies and fractional surface densities are determined as a function of e-beam dose, dot size, and inter-dot spacing using scanning and transmission electron microscopies. The majority of resulting nanowires exhibited randomly oriented growth with the respect to the substrate and tapered with narrow tops, wider bases, and the catalyst tipscharacteristics of vapor-liquid-solid process. The base diameters of the wires are larger than the dot size, which is likely due to the non-catalyzed vapor-solid deposition along the sidewalls. The higher dose rate in pattering leads the formation of higher aspect ratio nanowires with narrower base. The fractional surface density follows the trend of clearing dose and critical dose for nanowire growth increases with decreasing catalyst pattering size and spacing. At a given dose, the fractional density increased with increasing Au dot size and with decreasing inter-dot spacing. Our results may provide new insights into the role of catalyst preparing conditions on the density controlled growth of nanowires in a single wafer.

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Ga migration process in Au film on (100) GaAs under temperature treatment in vacuum

Cited by 9 publications

References 2 publications

Process‐Induced Modification to the Surface of Crystalline Silicon Measured by Precise Chemical Analysis

Process‐Induced Modification to the Surface of Crystalline Silicon Measured by Precise Chemical Analysis

Strong blue emission from ZnSe nanowires grown at low temperature

Effect of e-beam dose on the fractional density of Au-catalyzed GaAs nanowire growth

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