2013
DOI: 10.1002/pssr.201308264
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Strong blue emission from ZnSe nanowires grown at low temperature

Abstract: We report optimized photoluminescence of ZnSe nanowires grown by molecular beam epitaxy, obtained by lowering the growth temperature down to 300 °C. The low-temperature growth method has been developed using Si(111) and GaAs(111)B substrates. On the latter, vertical oriented blue-emitting nanowires have been obtained. The growth mecha- nism is discussed with the help of in-situ and ex-situ electronic and structural measurements. We also report strong blue luminescence from ZnSe nanowires grown on ITO-coated gl… Show more

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Cited by 11 publications
(14 citation statements)
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“…During the measurements the status of the cell attached to the cantilever did not show significant morphological variations, and the life time of the cell on Si NWs is observed to be comparable to that on collagen and glass coverslip. On the contrary, similar measurements performed on ZnSe NWs grown at low temperature on ITO substrates (online supplementary figure S2) [31] reveal that after a few contacts, the cell forms globular structures related to cell injury and death, with a fast reduction of adhesion forces (online supplementary figures S3 and S4). The same behavior is observed on flat ZnSe substrates and we conclude that the effect arises from ZnSe toxicity rather than a topographical effect.…”
Section: Resultsmentioning
confidence: 88%
“…During the measurements the status of the cell attached to the cantilever did not show significant morphological variations, and the life time of the cell on Si NWs is observed to be comparable to that on collagen and glass coverslip. On the contrary, similar measurements performed on ZnSe NWs grown at low temperature on ITO substrates (online supplementary figure S2) [31] reveal that after a few contacts, the cell forms globular structures related to cell injury and death, with a fast reduction of adhesion forces (online supplementary figures S3 and S4). The same behavior is observed on flat ZnSe substrates and we conclude that the effect arises from ZnSe toxicity rather than a topographical effect.…”
Section: Resultsmentioning
confidence: 88%
“…The PL spectra of ZnSe at 10 K typically show three emission bands corresponding to the NBE region, to shallow centers and to the Y-line at low energies. [21,28] ZnSe being a polar crystal, because of Fröhlich interaction, phonon replicas often appear in the PL spectra from phononassisted emission of free and bound excitons as well as donor-acceptor pair (DAP) [28]. In particular, the spectra of the pristine sample (red lines in parts (a), (b), and (c) of Figure 8) are characterized by a broad NBE emission peaked at about 2.8 eV followed by a broader emission at low energies (the Y-line, see also ref.…”
Section: Photoluminescencementioning
confidence: 99%
“…In order to allow for transient absorption measurements, we have used NWs grown on transparent substrates. As these kinds of substrates do not withstand high temperatures, we turned our attention to materials that can be grown at low temperature with good optical quality, as ZnSe [57] and Si NWs [58]. This type of samples are semitransparent and allow for a good signal-to-noise ratio in the transient measurements [20,21].…”
Section: Znse and Si Nanowiresmentioning
confidence: 99%