Furnace grown gate oxynitride using nitric oxide (NO)

Okada, Yoshio; Tobin, Philip J.; Reid, K.; Hegde, Rama I.; Maiti, B.; Ajuria, Sergio A.

doi:10.1109/16.310113

Cited by 82 publications

(28 citation statements)

References 11 publications

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“…Annealing in NO and N O appear to be the two most promising techniques. While both techniques lead to incorporation of nitrogen at the interface, the annealing in N O leads to new oxide growth [7], as opposed to the annealing in NO which nitrides the interface with virtually no new oxide growth [8]- [11]. The nitrogen accumulation at the interface is related to observed improvements of the electrical characteristics of oxide/silicon interface [8]- [14].…”

Section: Si Background Sic Results and Discussionmentioning

confidence: 99%

Nitridation of silicon-dioxide films grown on 6H silicon carbide

Dimitrijev

Harrison

et al. 1997

IEEE Electron Device Lett.

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Abstract-This letter addresses the question of why it is possible to grow high-quality oxide films on N-type but not on P-type SiC. It provides results which indicate that the oxide/SiC interface would be inferior to the oxide/Si interface for both, N-type and P-type SiC, if it were not for the beneficial effects of nitrogen incorporation. The letter presents, for the first time, results on nitridation of thermally grown oxides in NO and N2O. The results demonstrate that the oxides grown on P-type can be improved by NO annealing, but not by N2O annealing.

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Section: Si Background Sic Results and Discussionmentioning

confidence: 99%

Nitridation of silicon-dioxide films grown on 6H silicon carbide

Dimitrijev

Harrison

et al. 1997

IEEE Electron Device Lett.

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“…Oxynitride prepared by NH 3 nitridation would introduce a large amount of traps because of the hydrogen incorporation and the amount of nitrogen incorporation at high temperature (>1000°C) is still too low (<5%) [70,71,[85][86][87] to improve the j value. With the advantages of low hydrogen content and the selflimited low growth rate, N 2 O oxide permits a better control of film thickness and slightly increases the resistance to boron diffusion [88][89][90][91][92][93][94][95][96][97][98][99][100][101][102][103][104][105].…”

Section: The Prospect and Process Variantsmentioning

confidence: 99%

On the scaling issues and high-κ replacement of ultrathin gate dielectrics for nanoscale MOS transistors

Wong

Iwai

2006

Microelectronic Engineering

350

184

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“…3͒, most likely due to a higher N incorporation by the growth in NO than in N 2 O during reoxynitridation. 12,15,26 Besides, increasing the first oxynitridation time from 60 to 120 min does not result in a higher N peak , as can be seen in Figs. 4͑a͒ and 4͑b͒.…”

Section: Resultsmentioning

confidence: 57%

“…5 and 6, at 900°C and 1 atm. 12,15,26 Since film growth retardation increases with an increase in the N content in the film, the middle oxidation step moves the dielectric/substrate interface much farther into the substrate after growth in N 2 O as compared to that in NO. Therefore, after the N 2 O˜O 2 processing sequence, as new N is incorporated into the oxynitride during reoxynitridation ͑using either NO or N 2 O), a bimodal N profile is obtained in the oxynitride.…”

Section: Resultsmentioning

confidence: 98%

“…Since N 2 O and NO do not result in hydrogen incorporation into the dielectric film, they are preferred to NH 3 for the fabrication of oxynitrides. 3 Growth in N 2 O 9-12,16 and NO [13][14][15] has been generally seen to incorporate N near the oxynitride/Si interface, whereas reoxidation in O 2 , 12,16,18 after oxynitridation, has been found to shift the interface deeper into the substrate, thus taking the N concentration profile relatively away from the interface. A bimodal profile of N in silicon oxynitride films might, therefore, be obtained via the following steps: [17][18][19][20] This study aims at identifying the growth sequence͑s͒ and processing conditions necessary to obtain a bimodal N concentration profile in silicon oxynitrides.…”

Section: Introductionmentioning

confidence: 94%

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Optimization of bimodal nitrogen concentration profiles in silicon oxynitrides

Dang

Takoudis

1999

Journal of Applied Physics

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Since the presence of nitrogen is responsible for highly desirable properties of silicon oxynitrides in the ultra-large-scale integration era, the amount, position, and concentration profile of N in these films are of great interest. In this regard, we have studied several processing sequences (using successive oxynitridation/oxidation/oxynitridation steps) in order to obtain a bimodal N concentration profile with one peak close to the dielectric/Si interface and the other near the top surface of the dielectric. At 900 °C and 1 atm, it is found that the first oxynitridation step is required to incorporate less than a “critical” amount of N so that a bimodal profile is eventually obtained. Suggestions on how to optimize the concentration and profile of N within the silicon oxynitride film through process–property relationships are presented. Further, the flexibility in N incorporation offered by a mixed ambience of nitrous oxide (N2O) and nitric oxide (NO) coupled with the observation that pure NO processing incorporates about one order of magnitude more nitrogen than pure N2O processing could indeed result in novel approaches in designing and optimizing the chemical (electrical and physical) properties of the oxynitrides. Such results may have significant implications for microelectronic applications of the silicon oxynitridation technology.

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Furnace grown gate oxynitride using nitric oxide (NO)

Cited by 82 publications

References 11 publications

Nitridation of silicon-dioxide films grown on 6H silicon carbide

Nitridation of silicon-dioxide films grown on 6H silicon carbide

On the scaling issues and high-κ replacement of ultrathin gate dielectrics for nanoscale MOS transistors

Optimization of bimodal nitrogen concentration profiles in silicon oxynitrides

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