Fundamentals of Semiconductor Physics and Devices

Enderlein, R.; Horing, Norman J. M.

doi:10.1142/9789812384690

Cited by 66 publications

(77 citation statements)

References 0 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…Bulk AlAs, bulk GaAs and AlAs / GaAs interfaces were all grown epitaxially on the same GaAs wafer along the [001] crystal direction by MBE [1][2][3]. The substrate was polished to a tolerance of ±0.…”

Section: Sample Preparationmentioning

confidence: 99%

“…The sharpness of semiconductor layers is an active area of interest as the quality of such structures has a direct influence on the electronic and optical properties of the latest highspeed semiconductor devices [1][2][3][4]. In this context, interfacial sharpness is considered a general term for the level of deviation from a perfect interface that gives rise to a compositional transition region between two materials.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Experimental evaluation of interfaces using atomic-resolution high angle annular dark field (HAADF) imaging

et al. 2012

View full text Add to dashboard Cite

Section: Sample Preparationmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Experimental evaluation of interfaces using atomic-resolution high angle annular dark field (HAADF) imaging

et al. 2012

View full text Add to dashboard Cite

“…Usually these mobilities are calculated within the EMA. [12][13][14] This approximation is however not anymore valid for a superlattice with extremely small layer thicknesses w Si and w SiO 2 . The confinement leads to many electron and hole subbands, which are all involved in the transport processes.…”

Section: ͑2͒mentioning

confidence: 99%

“…They correspond to quantities averaged also over all directions. In the bulk case with an isotropic electron ͑hole͒ effective mass m n ͑m p ͒ expression ͑3͒ yields, 13,14 N C = 1…”

Section: ͑2͒mentioning

confidence: 99%

“…The first step needs to derive material parameters theoretically. This task may be realized for instance by first-principles calculations or calculations via the effective-mass approximation ͑EMA͒ [12][13][14] that determines the band structure of the new material. From this band structure, quantities such as absorption coefficient and density of states follow, which subsequently serve to evaluate the efficiency limits of the given material.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Efficiency limits of Si/SiO2 quantum well solar cells from first-principles calculations

Kirchartz

Seino

Wagner

et al. 2009

Journal of Applied Physics

View full text Add to dashboard Cite

In order to investigate the applicability of new photovoltaic absorber materials, we show how to use first-principles calculations combined with device simulations to determine the efficiency limits of solar cells made from SiO2/Si superlattices and from coaxial ZnO/ZnS nanowires. Efficiency limits are calculated for ideal systems according to the Shockley–Queisser theory but also for more realistic devices with finite mobilities, nonradiative lifetimes, and absorption coefficients. Thereby, we identify the critical values for mobility and lifetime that are required for efficient single junction as well as tandem solar cells.

show abstract

Engineering Temperature‐Dependent Carrier Concentration in Bulk Composite Materials via Temperature‐Dependent Fermi Level Offset

Hui

Gao

et al. 2017

Advanced Energy Materials

View full text Add to dashboard Cite

concentration that maximizes the dimensionless thermoelectric (TE) figure of merit ZT (and thus the energy conversion efficiency) of a TE material depends upon the temperature, as illustrated in Figure 1a,b (which derives from expressions detailed in Section S1 of the Supporting Information). ZT is defined as S 2 σT/κ, where S is the Seebeck coefficient, σ is the electrical conductivity, T is the absolute temperature, and κ is the thermal conductivity. The temperature dependence of the optimal carrier concentration poses a challenge since TE devices are typically operated over a wide range of temperatures and, with a fixed carrier concentration, the performance degrades at temperatures for which the carrier concentration is not optimal. This problem is magnified by the fact that the figure of merit is also strongly temperature-dependent and is typically optimized by adjusting the carrier concentration near its peak value. Conventional doping strategies based on adding impurity atoms do not offer a means of controlling the temperature dependence of the carrier concentration because Precise control of carrier concentration in both bulk and thin-film materials is crucial for many solid-state devices, including photovoltaic cells, superconductors, and high mobility transistors. For applications that span a wide temperature range (thermoelectric power generation being a prime example) the optimal carrier concentration varies as a function of temperature. This work presents a modified modulation doping method to engineer the temperature dependence of the carrier concentration by incorporating a nanosize secondary phase that controls the temperature-dependent doping in the bulk matrix. This study demonstrates this technique by de-doping the heavily defect-doped degenerate semiconductor GeTe, thereby enhancing its average power factor by 100% at low temperatures, with no deterioration at high temperatures. This can be a general method to improve the average thermoelectric performance of many other materials.

show abstract

Fundamentals of Semiconductor Physics and Devices

Abstract: FUNDAMENTALS OF SEMICONDIJC'IOK PHYSICS AND DEVICES

Cited by 66 publications

References 0 publications

Experimental evaluation of interfaces using atomic-resolution high angle annular dark field (HAADF) imaging

Experimental evaluation of interfaces using atomic-resolution high angle annular dark field (HAADF) imaging

Efficiency limits of Si/SiO2 quantum well solar cells from first-principles calculations

Engineering Temperature‐Dependent Carrier Concentration in Bulk Composite Materials via Temperature‐Dependent Fermi Level Offset

Contact Info

Product

Resources

About