The technological settings of a modified sol-gel method for preparation of highly fine homogeneous powder Ca 2 CuO 3 doped with uranium 238 (x=0−0.05) is presented. The analysis of structure, purity of phases and the justification for the role of uranium in the given compounds are provided together with almost complete classification of observed optical phonons by means of the Raman, IR measurements and ab initio calculation. The significant reduction in particle size was achieved by doping and the strong correlation between resistivity and doping concentration was observed and explained using the phonon-assisted electron hopping conduction model. The persistence of covalent insulation state in all compounds is a key feature of this class of compounds.

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. (2012) Characterisation of InAs/GaAs short period superlattices using column ratio mapping in aberration-corrected scanning transmission electron microscopy. Micron, 43 (10 AbstractThe image processing technique of column ratio mapping was applied to aberration-corrected high angle annular dark field (HAADF) images of short period MBE (molecular beam epitaxy) grown InAs/GaAs superlattices. This method allowed the Indium distribution to be mapped and a more detailed assessment of interfacial quality to be made. Frozen-phonon multislice simulations were also employed to provide a better understanding of the experimental column ratio values. It was established that ultra-thin InAs/GaAs layers can be grown sufficiently well by MBE. This is despite the fact that the Indium segregated over 3-4 monolayers. Furthermore, the effect of the growth temperature on the quality of the layers was also investigated. It was demonstrated that the higher growth temperature resulted in a better quality superlattice structure.

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High angle annular dark field (HAADF) image simulations were performed on a series of AlAs/GaAs interfacial models using the frozen-phonon multislice method. Three general types of model were considered-perfect, vicinal/sawtooth and diffusion. These were chosen to demonstrate how HAADF image measurements are influenced by different interfacial structures in the technologically important III-V semiconductor system. For each model, interfacial sharpness was calculated as a function of depth and compared to aberrationcorrected HAADF experiments of two types of AlAs/GaAs interfaces. The results show that the sharpness measured from HAADF imaging changes in a complicated manner with thickness for complex interfacial structures. For vicinal structures, it was revealed that the type of material that the probe projects through first of all has a significant effect on the measured sharpness. An increase in the vicinal angle was also shown to generate a wider interface in the random step model. The Moison diffusion model produced an increase in the measured sharpness with depth which closely matched the experimental results of the AlAson-GaAs interface. In contrast, the measured sharpness decreased as a function of depth in the linear diffusion model. Only in the case of the perfect model was it possible to ascertain the underlying structure directly from HAADF image analysis.

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