Experimental evaluation of interfaces using atomic-resolution high angle annular dark field (HAADF) imaging

Robb, Paul D.; Finnie, Michael; Longo, Paolo; Craven, A. J.

doi:10.1016/j.ultramic.2011.10.015

Cited by 16 publications

(5 citation statements)

References 33 publications

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“…24) Further careful processing of HAADF-STEM images will statistically quantify the transition region thickness and enable us to examine interface abruptness more rigorously. 25) A more quantitative analysis of the HAADF-STEM image of AlAs/ InGaAs/InAs DB structures will be described elsewhere.…”

Section: Resultsmentioning

confidence: 99%

Structural and electrical transport properties of MOVPE-grown pseudomorphic AlAs/InGaAs/InAs resonant tunneling diodes on InP substrates

Sugiyama

Teranishi

Suzuki

et al. 2014

Jpn. J. Appl. Phys.

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We report metal–organic vapor-phase epitaxy (MOVPE) growth of pseudomorphic AlAs/InGaAs/InAs resonant tunneling diodes (RTDs) on InP substrates for the first time. X-ray diffraction (XRD) measurements and transmission electron microscopy (TEM) observations reveal that a uniform strained InAs subwell is coherently grown in the double-barrier (DB) structure. The AlAs/InGaAs/InAs RTDs exhibit excellent current–voltage characteristics with a high peak current density (J P) of around 2 × 105 A/cm2 and peak-to-valley ratio (PVR) of around 6. A comparison with control RTDs consisting of AlAs/In0.8Ga0.2As DB confirms the effectiveness of InAs subwell insertion for the improvement of PVR.

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Section: Resultsmentioning

confidence: 99%

Structural and electrical transport properties of MOVPE-grown pseudomorphic AlAs/InGaAs/InAs resonant tunneling diodes on InP substrates

Sugiyama

Teranishi

Suzuki

et al. 2014

Jpn. J. Appl. Phys.

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“…Most nanorods do not persist through the entire thickness as is discussed further in the Supporting Information with the aid of image simulations. In addition, the electron beam tends to spread significantly after channelling along a heavy column for a few unit cells resulting in significant background signals in both imaging and spectroscopy 15. Thus, each atomic column in the spectrum image will also contain unknown contributions from the BiFeO 3 matrix and the chemistry cannot be absolutely quantified from the EELS‐SI.…”

Section: Resultsmentioning

confidence: 99%

Novel Nanorod Precipitate Formation in Neodymium and Titanium Codoped Bismuth Ferrite

MacLaren

Wang

Schaffer

et al. 2012

Adv Funct Materials

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The discovery of unusual nanorod precipitates in bismuth ferrite doped with Nd and Ti is reported. The atomic structure and chemistry of the nanorods are determined using a combination of high angle annular dark field imaging, electron energy loss spectroscopy, and density functional calculations. It is found that the structure of the BiFeO3 matrix is strongly modified adjacent to the precipitates; the readiness of BiFeO3 to adopt different structural allotropes in turn explains why such a large axial ratio, uncommon in precipitates, is stabilized. In addition, a correlation is found between the alignment of the rods and the orientation of ferroelastic domains in the matrix, which is consistent with the system's attempt to minimize its internal strain. Density functional calculations indicate a finite density of electronic states at the Fermi energy within the rods, suggesting enhanced electrical conductivity along the rod axes, and motivating future investigations of nanorod functionalities.

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“…Compound semiconductors of III–V type, in particular composition variations and interface properties, are investigated in Refs. . The possibilities of HAADF‐STEM considerably increased with the availability of spherical aberration‐corrected electron microscopes.…”

Section: Methodsmentioning

confidence: 99%

Interfacial intermixing in SrRuO₃/Pr_0.7Ca_0.3MnO₃ epitaxial superlattices: A HAADF‐STEM study

Hillebrand

Pippel

Vrejoiu

et al. 2013

Physica Status Solidi (a)

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We quantitatively interpret HAADF‐STEM images of SrRuO3/Pr0.7Ca0.3MnO3 (SRO/PCMO) superlattices. The images were taken in a probe‐corrected (cs = 0) FEI microscope at 300 kV. The specimen thickness is estimated by comparing experimental and simulated Z‐contrast ratios. The intermixing at the interfaces is different for the growth of SRO on PCMO and that of PCMO on SRO. In addition, the thermal stability of SRO/PCMO superlattices is studied by HAADF‐STEM, based on a series of annealing experiments. Colored HAADF‐STEM image (V = 300 kV, cs = 0 mm) of part of a SrRuO3/Pr0.7Ca0.3MnO3 epitaxial superlattice.

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Experimental evaluation of interfaces using atomic-resolution high angle annular dark field (HAADF) imaging

Cited by 16 publications

References 33 publications

Structural and electrical transport properties of MOVPE-grown pseudomorphic AlAs/InGaAs/InAs resonant tunneling diodes on InP substrates

Structural and electrical transport properties of MOVPE-grown pseudomorphic AlAs/InGaAs/InAs resonant tunneling diodes on InP substrates

Novel Nanorod Precipitate Formation in Neodymium and Titanium Codoped Bismuth Ferrite

Interfacial intermixing in SrRuO₃/Pr_0.7Ca_0.3MnO₃ epitaxial superlattices: A HAADF‐STEM study

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Experimental evaluation of interfaces using atomic-resolution high angle annular dark field (HAADF) imaging

Cited by 16 publications

References 33 publications

Structural and electrical transport properties of MOVPE-grown pseudomorphic AlAs/InGaAs/InAs resonant tunneling diodes on InP substrates

Structural and electrical transport properties of MOVPE-grown pseudomorphic AlAs/InGaAs/InAs resonant tunneling diodes on InP substrates

Novel Nanorod Precipitate Formation in Neodymium and Titanium Codoped Bismuth Ferrite

Interfacial intermixing in SrRuO3/Pr0.7Ca0.3MnO3 epitaxial superlattices: A HAADF‐STEM study

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Interfacial intermixing in SrRuO₃/Pr_0.7Ca_0.3MnO₃ epitaxial superlattices: A HAADF‐STEM study