“…This hierarchical procedure was already adopted for the analysis of different types of CVD reactors (barrel & horizontal ones) thus it will be not addressed here in detail, being the model equations described in . In summary, the procedure conceptually here adopted to analyze the problem was the following : –To roughly design the reactor through analytical models assuming the process is in mass transport limited conditions.–To derive a lumped kinetic expression able to substantially represent the detailed chemistry in the temperature and pressure ranges of interest by means of a very fast running simplified 1D model, like the one adopted several times by our research group an described in detail in reference .–To verify the lumped kinetics previously derived through a 2D model of the reactor. In that case the calculations are also repeated through the detailed mechanism to compare the accuracy of the calculations.–To embed the now verified lumped kinetics into the detailed 3D model to perform the reactor optimization and design.–To perform sensitivity analysis to identify the construction features affecting in the largest extent the reactor performance.…”
The computational design of a high throughput chemical vapor deposition (CVD) reactor to deposit silicon films is here presented. The reactor is characterized by a multichannel hot wall structure, atmospheric operation, and an alternated feeding of reactants from the two reactor sides to ensure the maximum consumption of precursors while keeping an acceptable film thickness uniformity. Particular care was ensured in developing an inlet/exhaust design to uniformly distribute/exhaust the reactants and byproducts through the different channels of the reactor.
“…This hierarchical procedure was already adopted for the analysis of different types of CVD reactors (barrel & horizontal ones) thus it will be not addressed here in detail, being the model equations described in . In summary, the procedure conceptually here adopted to analyze the problem was the following : –To roughly design the reactor through analytical models assuming the process is in mass transport limited conditions.–To derive a lumped kinetic expression able to substantially represent the detailed chemistry in the temperature and pressure ranges of interest by means of a very fast running simplified 1D model, like the one adopted several times by our research group an described in detail in reference .–To verify the lumped kinetics previously derived through a 2D model of the reactor. In that case the calculations are also repeated through the detailed mechanism to compare the accuracy of the calculations.–To embed the now verified lumped kinetics into the detailed 3D model to perform the reactor optimization and design.–To perform sensitivity analysis to identify the construction features affecting in the largest extent the reactor performance.…”
The computational design of a high throughput chemical vapor deposition (CVD) reactor to deposit silicon films is here presented. The reactor is characterized by a multichannel hot wall structure, atmospheric operation, and an alternated feeding of reactants from the two reactor sides to ensure the maximum consumption of precursors while keeping an acceptable film thickness uniformity. Particular care was ensured in developing an inlet/exhaust design to uniformly distribute/exhaust the reactants and byproducts through the different channels of the reactor.
A doublecrucible (DC) Czochralski setup has been used for the pulling of semi-insulating Fedoped InP. The level of the Fedoped melt in the growth crucible is replanished with the undoped InP from the reservoir crucible. In this way, since the distribution coefficient of iron is very small (about 0.001), the Fe concentration in the growth crucible is virtually unchanged during the pulling so that the axial Fe concentration is much more uniform than in standard LEC crystals. The use of two concentric crucibles has great implications in terms of convective flows, stability of the melt temperature and interface shape. In this paper we report the results of a study on striations and structural defects in InP grown from a double-crucible LEC arrangement. A dimensionless relationship for correlating striation features with melt motions is also proposed.
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