Fundamental properties of a-SiNx:H thin films deposited by ICP-PECVD for MEMS applications

Dergez, D.; Schalko, J.; Bittner, A.; Schmid, U.

doi:10.1016/j.apsusc.2013.07.104

Cited by 29 publications

(22 citation statements)

References 36 publications

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“…Up to P RF = 20-35 W a further increase of was observed to the maximum value of ∼2.5 GPa, whereas between P RF = 35 and 150 W a slow reduction of to ∼1.75 GPa was determined. Furthermore, unlike in the case of layers deposited at P RF = 0 with similar N 2 /SiH 4 flow rate ratios, a post-deposition drifting of in the compressive direction [20] was not observed. A change of this magnitude cannot be caused by the TCE (temperature coefficient of expansion) related component of the total film stress, but by an abrupt change in the chemical composition or microstructure of the films.…”

Section: Optical and Mechanical Film Propertiescontrasting

confidence: 51%

“…This can be attributed to compositional changes in the a-SiN x :H thin films. Recently published X-ray photoelectron spectroscopy (XPS) measurements [20,21] indicate that the layers deposited without any additional capacitively coupled plasma excitation can be silicon-rich. This is also true when n < 2.0, despite the refractive index being lower than that of stoichiometric Si 3 N 4 .…”

Section: Optical and Mechanical Film Propertiesmentioning

confidence: 99%

“…As the power of the inductively coupled plasma source (P ICP ) was found to have only a minor impact on the properties of a-SiN x :H thin films between 500 and 1000 W [20], this parameter was kept at 750 W. The capacitively coupled plasma power (P RF ) was varied between 0 and 150 W. The flow rate of N 2 gas was varied in some cases in the range of 6-24 sccm, whereas flow rates of Ar and SiH 4 were also kept constant at 48 and 12 sccm, respectively. A summary of the different deposition parameters is given in Table 1.…”

Section: Sample Preparationmentioning

confidence: 99%

“…4 and 5, FT-IR spectra of selected samples deposited using different nitrogen flow rates [20], with and without the application of auxiliary capacitively coupled plasma are shown. In accordance with previous results [21], the relative intensity of Si N absorption band exhibits a maximum at the N 2 flow rate of 9 sccm, independent whether the deposition was assisted by a capacitively coupled plasma or not.…”

Section: Microstructure and Chemical Analysesmentioning

confidence: 99%

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Impact of auxiliary capacitively coupled plasma on the properties of ICP-CVD deposited a-SiNx:H thin films

Dergez

Schalko

Löffler³

et al. 2015

Sensors and Actuators A: Physical

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Section: Optical and Mechanical Film Propertiescontrasting

confidence: 51%

Section: Optical and Mechanical Film Propertiesmentioning

confidence: 99%

Section: Sample Preparationmentioning

confidence: 99%

Section: Microstructure and Chemical Analysesmentioning

confidence: 99%

See 2 more Smart Citations

Impact of auxiliary capacitively coupled plasma on the properties of ICP-CVD deposited a-SiNx:H thin films

Dergez

Schalko

Löffler³

et al. 2015

Sensors and Actuators A: Physical

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“…By introducing novel plasma processes, enhanced structures with new functionalities emerged . Besides deposition of thin films by plasma techniques like sputtering, or plasma enhanced chemical vapor deposition (PECVD), etching processes like reactive ion etching (RIE), or highly anisotropic etching of silicon by deep reactive ion etching (DRIE) have enabled production of surface micromachined MEMS, which have become a huge commercial success story.…”

Section: Introductionmentioning

confidence: 99%

Plasma techniques in the production of customized MEMS‐applications

Bittner

Hochstein

Rockstroh

et al. 2019

Plasma Processes & Polymers

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Micro electromechanical systems (MEMS) have found their way into many kinds of applications. Especially sensors are daily used by each of us in products like cars and smartphones. The focus of Hahn‐Schickard is the development and the production of highly specialized MEMS products, ones that especially enable small companies the access to MEMS technology. The portfolio includes specific inertial sensors like gyroscopes for navigation and safety, acceleration sensors for crash‐test dummies, microfluidic devices for biological, and medical applications, and so on. All of these devices are manufactured in the institute's cleanroom in volumes ranging from single devices up to hundreds of thousands of chips. In this article, the multitude of application scenarios will be demonstrated by way of diverse MEMS components.

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Inductively Coupled Plasma Chemical Vapor Deposition for Silicon‐Based Technology Compatible with Low‐Temperature (≤220 °C) Flexible Substrates

Yang

Sagazan

Pichon

et al. 2020

Physica Status Solidi (a)

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Herein, an inductively coupled plasma chemical vapor deposition (CVD) (ICP‐CVD) technique is adopted for deposition of silicon dioxide and silicon thin films to fabricate metal–oxide–semiconductor (MOS) capacitors and thin film transistors (TFTs). Prior to the fabrication and characterization of the TFTs, C–V measurements and breakdown tests are conducted on MOS capacitors based on silicon dioxide deposited under temperatures as low as 20 °C. The breakdown field of 9 MV cm−1 is validated afterward, which implies the good electrical insulating property for acting as a gate insulator and the feasibility of the TFTs. After going through forming gas and thermal annealing with the highest temperature of 220 °C, the TFTs yield good gate insulating properties, a threshold voltage of 3.7 V, an on/off ratio of 6.4 × 102, field effect mobility of 1.2 cm2 (V s)−1, and a subthreshold slope of 3.9 V dec−1. They show promising electrical properties under such a low‐temperature fabrication process using ICP‐CVD technique compatible for silicon electronics using low‐cost flexible substrates.

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Fundamental properties of a-SiNx:H thin films deposited by ICP-PECVD for MEMS applications

Cited by 29 publications

References 36 publications

Impact of auxiliary capacitively coupled plasma on the properties of ICP-CVD deposited a-SiNx:H thin films

Impact of auxiliary capacitively coupled plasma on the properties of ICP-CVD deposited a-SiNx:H thin films

Plasma techniques in the production of customized MEMS‐applications

Inductively Coupled Plasma Chemical Vapor Deposition for Silicon‐Based Technology Compatible with Low‐Temperature (≤220 °C) Flexible Substrates

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