Fundamental mode colpitts VCOs at 115 and 165-GHz

Zhao, Yan; Heinemann, B.; Pfeiffer, Ullrich R.

doi:10.1109/bctm.2011.6082744

Cited by 16 publications

(2 citation statements)

References 14 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Whereas RFCMOS heavily favors a cross-coupled structure as a result of an easy start-up with lower power consumption (cf. Figure 5), SiGe uses its higher transconductance gm to drive colpitts/hartley VCOs that usually have better noise and power performance (Figures 3-5) [15,16]. Considering that a decent number of III-V semiconductor VCOs could only be gathered prior to 2010 (see Figure 1), a lot of miscellaneous (Misc) circuit concepts were found alongside the prevalent cross-coupled and colpitts structure.…”

Section: Voltage-controlled Oscillator (Vco)mentioning

confidence: 99%

An Overview of State-of-the-Art D-Band Radar System Components

Stadler

Papurcu

Welling

et al. 2022

Chips

View full text Add to dashboard Cite

In this article, a literature study has been conducted including 398 radar circuit elements from 311 recent publications (mostly between 2010 and 2022) that have been reported mainly in the F-, D- and G-Band (80–200 GHz). This study is intended to give a state-of-the-art comparison on the performance of the different technologies—RFCMOS, SiGe/BiCMOS and III–V semiconductor composites—regarding the most crucial circuit parameters of Voltage-Controlled Oscillators (VCO), Power Amplifiers (PA), Phase Shifters (PS), Low-Noise Amplifiers (LNA) and Mixers. The most common topologies of each circuit element as well as the differences between the technolgies will futher be laid out while reasoning their benefits. Since not all devices were derived solely from single device publications, necessary steps to yield as fairly a comparison as possible were taken. Results include the area and power efficiency in RFCMOS, superior noise and power performance in III–V semiconductors and a continuous compromise between efficiency and performance in SiGe. The most rarely published devices, being Mixers and PSs, in the given frequency range have also been identified to give incentive for further developments.

show abstract

Section: Voltage-controlled Oscillator (Vco)mentioning

confidence: 99%

An Overview of State-of-the-Art D-Band Radar System Components

Stadler

Papurcu

Welling

et al. 2022

Chips

View full text Add to dashboard Cite

show abstract

“…Fundamental-wave circuits are well suited showcasing the performance of a given technology, and SiGe-based fundamental-wave VCOs with upper limits of 130, 165, and 186 GHz have already been presented in [3], [5], and [6] (the latter two are single building blocks without buffer and prescaler). The circuits designed in this work will be used in future mm-wave applications; thus, they are integrated together with a frequency divider chain (prescaler) in order to facilitate closed-loop frequency modulation.…”

Section: Introductionmentioning

confidence: 99%

125 to 181 GHz fundamental-wave VCO chips in SiGe technology

Jahn

Aufinger

Meister

et al. 2012

2012 IEEE Radio Frequency Integrated Circuits Symposium

View full text Add to dashboard Cite

This paper presents four signal-generation chips that comprise a fundamental-wave voltage-controlled oscillator (VCO), an output buffer, and a divide-by-32 prescaler. The VCOs with contiguous tuning ranges cover almost the full waveguide band from 110 to 170 GHz (D-band). The fastest VCO operates at up to 181 GHz in combination with the prescaler. The VCOs run on 1.8 V, draw ∼35 mA, and achieve a single-sideband phase noise ranging from −92 to −82 dBc/Hz at 1 MHz offset frequency. Power consumption of the high-speed frequency divider in the first prescaler stage is 70 mW. The circuits are based on an Infineon SiGe technology, which features HBTs with an fmax of 340 GHz.

show abstract

Low phase‐noise high output power 176‐GHz voltage‐controlled oscillator in a 130‐nm BiCMOS technology

Bello

Pantoli

et al. 2019

IET Microwaves, Antennas & Propagation

View full text Add to dashboard Cite

In this study, the authors present the design and measurement results of a voltage‐controlled oscillator (VCO) that is based on a Colpitts core topology and a cascade output buffer. The circuit has a centre frequency of 176 GHz and is implemented in a 130 nm SiGe BiCMOS technology provided by IHP foundry. The VCO is a differential fundamental wave tunable oscillator that makes use of a transistor‐based LC‐resonator. On‐wafer measurements show a tuning range of about 5% from 171 to 179.5 GHz. The circuit achieves a maximum output power of 7.3 dBm when biased at 1.6 V and 6.5 dBm if biased at 1.4 V, both with an efficiency of ∼ 6.6%. DC power consumption is 82 and 52 mW, respectively. The measured phase‐noise of the VCO is − 110 dBc/Hz at 10 MHz offset. The VCO demonstrates state‐of‐the‐art performance at these frequencies with very good performance in term of output power, efficiency linearity, phase noise and compactness; in addition, thanks to the proposed architecture it shows high integrability at the system level.

show abstract

Fundamental mode colpitts VCOs at 115 and 165-GHz

Cited by 16 publications

References 14 publications

An Overview of State-of-the-Art D-Band Radar System Components

An Overview of State-of-the-Art D-Band Radar System Components

125 to 181 GHz fundamental-wave VCO chips in SiGe technology

Low phase‐noise high output power 176‐GHz voltage‐controlled oscillator in a 130‐nm BiCMOS technology

Contact Info

Product

Resources

About