Functionalized Graphene as an Ultrathin Seed Layer for the Atomic Layer Deposition of Conformal High-<i>k</i> Dielectrics on Graphene

Shin, Woo Cheol; Bong, Jae Hoon; Choi, Sung‐Yool; Cho, Byung Jin

doi:10.1021/am4039807

Cited by 30 publications

(55 citation statements)

References 29 publications

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“…To generate seeding sites on graphene, functional groups can be directly introduced to the graphene surface by oxidizing carbon atoms of graphene [112,[127][128][129] [128]. They reported an increase of the defect level in graphene on the basis of Raman measurements, indicating that graphene was functionalized during the O 2 plasma-assisted ALD process.…”

Section: Functionalization Of Graphenementioning

confidence: 99%

“…Both drain current and mobility were enhanced in graphene FETs with 9-nm-thick Al 2 O 3 by plasmaassisted ALD, compared to those obtained with a 9-nmthick, e-beam-evaporated SiO 2 interfacial layer plus a 15-nm-thick Al 2 O 3 layer by thermal ALD (Figure 6d). In order to avoid uncontrolled damage of graphene in O 2 plasma or O 3 -assisted ALD, Shin et al proposed a novel approach for reliable high-k dielectric formation on graphene with ALD by introducing an additional functionalized graphene single layer as an ultrathin seed layer on the graphene channel (Figure 6e) [129]. Pristine graphene was transferred to a target substrate and then functionalized (O 2 plasma treated) graphene was stacked on the pristine graphene prior to conducting the ALD process.…”

Section: Functionalization Of Graphenementioning

confidence: 99%

Section: Functionalization Of Graphenementioning

confidence: 99%

Section: Functionalization Of Graphenementioning

confidence: 99%

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Interface engineering for high performance graphene electronic devices

et al. 2015

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A decade after the discovery of graphene flakes, exfoliated from graphite, we have now secured large scale and high quality graphene film growth technology via a chemical vapor deposition (CVD) method. With the establishment of mass production of graphene using CVD, practical applications of graphene to electronic devices have gained an enormous amount of attention. However, several issues arise from the interfaces of graphene systems, such as damage/unintentional doping of graphene by the transfer process, the substrate effects on graphene, and poor dielectric formation on graphene due to its inert features, which result in degradation of both electrical performance and reliability in actual devices. The present paper provides a comprehensive review of the recent approaches to resolve these issues by interface engineering of graphene for high performance electronic devices. We deal with each interface that is encountered during the fabrication steps of graphene devices, from the graphene/metal growth substrate to graphene/high-k dielectrics, including the intermediate graphene/target substrate.

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Section: Functionalization Of Graphenementioning

confidence: 99%

Section: Functionalization Of Graphenementioning

confidence: 99%

Section: Functionalization Of Graphenementioning

confidence: 99%

Section: Functionalization Of Graphenementioning

confidence: 99%

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Interface engineering for high performance graphene electronic devices

et al. 2015

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“…Whereas graphene encapsulation with atomic layer deposited (ALD) alumina at the post-transfer stage has enabled reproducible device behaviour with negligible gate hysteresis and low doping levels [38][39][40]. Due to its scalability and atomic layer growth control, ALD is particularly suited to be used in conjunction with CVD graphene, and initial progress has been made in exploring the ALD parameter space to achieve conformal nucleation of ultrathin oxides on graphene and to improve rational 2D/non-2D material integration [41][42][43][44].…”

Section: Introductionmentioning

confidence: 99%

Atomic layer deposited oxide films as protective interface layers for integrated graphene transfer

et al. 2017

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The transfer of chemical vapour deposited graphene from its parent growth catalyst has become a bottleneck for many of its emerging applications. The sacrificial polymer layers that are typically deposited onto graphene for mechanical support during transfer are challenging to remove completely and hence leave graphene and subsequent device interfaces contaminated. Here, we report on the use of atomic layer deposited (ALD) oxide films as protective interface and support layers during graphene transfer. The method avoids any direct contact of the graphene with polymers and through the use of thicker ALD layers (≥100 nm), polymers can be eliminated from the transfer-process altogether. The ALD film can be kept as a functional device layer, facilitating integrated device manufacturing. We demonstrate back-gated field effect devices based on single-layer graphene transferred with a protective Al2O3 film onto SiO2 that show significantly reduced charge trap and residual carrier densities. We critically discuss the advantages and challenges of processing graphene/ALD bilayer structures.

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Atomic Layer Deposition for Graphene Device Integration

Vervuurt

Kessels

Bol

2017

Adv Materials Inter

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Graphene is a two dimensional material with extraordinary properties, which make it an interesting material for many optical and electronic devices. The integration of graphene in these devices often requires the deposition of thin dielectric layers on top of graphene. Atomic layer deposition (ALD) is the method of choice to deposit these layers due to its ability to deposit ultra‐thin, high quality films with sub‐monolayer thickness control. ALD on graphene however, is a challenge due to the lack of reactive surface sites on graphene. This leads to the selective growth on grain boundaries, wrinkles and defect sites present in the graphene. In this review an overview of the different methods to achieve uniform deposition of ALD on graphene is presented. The advantages and disadvantages of each method are discussed from the perspective of ALD together with the opportunities for further research. Special emphasis is given to the recent advancements in the understanding of the ALD process conditions and their influence on the deposition uniformity on graphene. Particularly, improving the quality of the dielectric layers deposited by ALD while maintaining the pristine properties of graphene, will prove vital for the device integration of graphene.

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Functionalized Graphene as an Ultrathin Seed Layer for the Atomic Layer Deposition of Conformal High-k Dielectrics on Graphene

Cited by 30 publications

References 29 publications

Interface engineering for high performance graphene electronic devices

Interface engineering for high performance graphene electronic devices

Atomic layer deposited oxide films as protective interface layers for integrated graphene transfer

Atomic Layer Deposition for Graphene Device Integration

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