Interface engineering for high performance graphene electronic devices

Abstract

A decade after the discovery of graphene flakes, exfoliated from graphite, we have now secured large scale and high quality graphene film growth technology via a chemical vapor deposition (CVD) method. With the establishment of mass production of graphene using CVD, practical applications of graphene to electronic devices have gained an enormous amount of attention. However, several issues arise from the interfaces of graphene systems, such as damage/unintentional doping of graphene by the transfer process, the substrate effects on graphene, and poor dielectric formation on graphene due to its inert features, which result in degradation of both electrical performance and reliability in actual devices. The present paper provides a comprehensive review of the recent approaches to resolve these issues by interface engineering of graphene for high performance electronic devices. We deal with each interface that is encountered during the fabrication steps of graphene devices, from the graphene/metal growth substrate to graphene/high-k dielectrics, including the intermediate graphene/target substrate.

Strain-engineered high-responsivity MoTe2 photodetector for silicon photonic integrated circuits

“…3f). This mismatch in strain variation (with predicted 4% tensile strain) can be attributed to the nature of DFT calculations where MoTe2 is in its isolated form, without considering the effects of substrates and environment [37,38]. A similar work function change induced by strain and its detection by KPFM is reported for WS2 and graphene [37,39].…”

Quantum Optic Entanglement Using Graphene Clad Surface Plasmonic Polariton Device

“…Figure -4a shows CC versus x determined by using the equation ( 6) for incident optical pulse energy E = 0, 2.13, 3.33 and 5.12 pJ with pulse width of 3.8 ps. The HOM dip is quantified with quantum visibility which is obtained by using formula, Quantum entanglement also depends on spatial degree of coherence () of SPP modes (which corresponds to photons)as visibility is directly proportional to  [29]. As roughness of graphene-dielectric interface [29], the  has negligible effect on quantum entanglement due to having constant value of unity.…”

“…The HOM dip is quantified with quantum visibility which is obtained by using formula, Quantum entanglement also depends on spatial degree of coherence () of SPP modes (which corresponds to photons)as visibility is directly proportional to  [29]. As roughness of graphene-dielectric interface [29], the  has negligible effect on quantum entanglement due to having constant value of unity. By considering bending loss of 0.12 dB [30], radius of curvature of bending (R) and separation between access waveguides (2HT) are estimated as 8 μm and 10 μm respectively and longitudinal length of access waveguide is determined as [30]…”

Biochars as Innovative Humidity Sensing Materials

“…Usually, humidity sensors are based on metal oxide semiconductors, conducting polymers, carbon nanotubes, and/or graphene oxides. At room temperature, the adsorption of water vapor/molecules changes the resistance or the capacitance of the sensing film [4][5][6][7][8][9][10][11][12][13][14][15].…”