Atomic Layer Deposition for Graphene Device Integration

Abstract

Graphene is a two dimensional material with extraordinary properties, which make it an interesting material for many optical and electronic devices. The integration of graphene in these devices often requires the deposition of thin dielectric layers on top of graphene. Atomic layer deposition (ALD) is the method of choice to deposit these layers due to its ability to deposit ultra‐thin, high quality films with sub‐monolayer thickness control. ALD on graphene however, is a challenge due to the lack of reactive surface sites on graphene. This leads to the selective growth on grain boundaries, wrinkles and defect sites present in the graphene. In this review an overview of the different methods to achieve uniform deposition of ALD on graphene is presented. The advantages and disadvantages of each method are discussed from the perspective of ALD together with the opportunities for further research. Special emphasis is given to the recent advancements in the understanding of the ALD process conditions and their influence on the deposition uniformity on graphene. Particularly, improving the quality of the dielectric layers deposited by ALD while maintaining the pristine properties of graphene, will prove vital for the device integration of graphene.

Spaced TiO2 Nanotubes Enable Optimized Pt Atomic Layer Deposition for Efficient Photocatalytic H2 Generation

“…In the literature, the importance of surface termination on the nucleation and growth of ALD is discussed in detail To determine the influence of the chemical state of the surface, we performed XPS analysis of reference SP and CP NTs (annealed at 450 °C in air), see Ti 1s and fitted O 1s peaks in Figure S2.…”

Vertical Transistors Based on 2D Materials: Status and Prospects

“…In this context, due to the layer-by-layer deposition mechanism, atomic layer deposition (ALD) has been considered as method of choice to grow thin high-k dielectrics (such as Al 2 O 3 and HfO 2 ) on Gr and TMDs [125]. The main challenge related to ALD on the chemically inert and dangling-bonds' free surface of 2D materials is the activation of nucleation sites from which the growth can initiate.…”

Bioelectronics and Interfaces Using Monolayer Graphene

“…First, the modification leads to the realization of new hybrid nanostructures that have interesting catalytic or sensing properties. Some examples include the deposition of metal or metal oxide nanoparticles such as Cu, Pt, [251,252] Pd, [125,253] Ru, [254] Ag, [255] Au or Al 2 O 3 . On the other hand, the presence of metal particles can be utilized to study surface‐enhanced Raman scattering (SERS) and hence can be used as efficient SERS substrates ,.…”

“…Very often, the particles are realized by electrodeposition, although direct metal evaporation and atomic layer deposition (ALD) are also common. While electrodeposition often leads to a variation in the particle density, ALD and metal deposition provides typically high quality deposition of metal over large surface areas . For the modification of graphene electrodes, the initiation of ALD requires defective sites as well as the presence of chemical functionalities on to the surface.…”

“…Some examples include the deposition of metal or metal oxide nanoparticles such as Cu, [250] Pt, [251,252] Pd, [125,253] Ru, [254] Ag, [255] Au [256] or Al 2 O 3 . [257] On the other hand, the presence of metal particles can be utilized to study surfaceenhanced Raman scattering (SERS) and hence can be used as efficient SERS substrates. [258,259] Very often, the particles are 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 realized by electrodeposition, although direct metal evaporation and atomic layer deposition (ALD) are also common.…”