Functional Organic Field‐Effect Transistors

Guo, Yunlong; Yu, Gui; Liu, Yunqi

doi:10.1002/adma.201000740

Cited by 539 publications

(392 citation statements)

References 206 publications

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“…[1][2][3][4][5] In the last few decades, many promising organic materials with high charge mobilities have been developed. [6][7][8] Unfortunately, in spite of the high bulk mobility of many organic materials, the corresponding OFETs often exhibited relatively low performance when utilizing these organic materials to fabricate bottomcontact (BC) devices.…”

Section: Introductionmentioning

confidence: 99%

Source/drain electrodes contact effect on the stability of bottom-contact pentacene field-effect transistors

Huang

et al. 2012

AIP Advances

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Bottom-contact pentacene field-effect transistors were fabricated with a PMMA dielectric layer, and the air stability of the transistors was investigated. To characterize the device stability, the field-effect transistors were exposed to ambient conditions for 30 days and subsequently characterized. The degradation of electrical performance was traced to study the variation of field-effect mobility, saturation current and off-state current. By investigating the morphology variance of the pentacene film at the channel and source/drain (S/D) contact regions by atomic force microscopy, it was clear that the morphology of the pentacene film adhered to the S/D degenerated dramatically. Moreover, by studying the variation of contact resistance in detail, it was found that the S/D contact effect was the main reason for the degradation in performance

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Section: Introductionmentioning

confidence: 99%

Source/drain electrodes contact effect on the stability of bottom-contact pentacene field-effect transistors

Huang

et al. 2012

AIP Advances

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“…Nanocrystals dispersed in the semiconductor polymer matrix as the charge-trapping element is a critical step in the quest to fabricate low-cost flash memory [35][36][37][38] . Meanwhile, using nanocrystals as charge-trapping elements can control the trapping levels and sites through solution process, which is highly desirable for printed electronics [39][40][41] . Finally, with UC nanocrystals dispersed in a three-dimensional space of the polymer matrix, we demonstrate an approach to manipulate the data storage levels with IR assistance.…”

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confidence: 99%

An upconverted photonic nonvolatile memory

et al. 2014

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Conventional flash memory devices are voltage driven and found to be unsafe for confidential data storage. To ensure the security of the stored data, there is a strong demand for developing novel nonvolatile memory technology for data encryption. Here we show a photonic flash memory device, based on upconversion nanocrystals, which is light driven with a particular narrow width of wavelength in addition to voltage bias. With the help of near-infrared light, we successfully manipulate the multilevel data storage of the flash memory device. These upconverted photonic flash memory devices exhibit high ON/OFF ratio, long retention time and excellent rewritable characteristics.

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“…This gap can be modified by substituting hydrogen or oxygen atoms for various functional groups. PTCDA and its derivatives [7] are widely applied in the fields of organic photovoltaic cells (OPVCs) and organic light emitting diodes (OLEDs) [8].…”

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confidence: 99%