Fully terminated Ka band high isolation, high power MMIC SPDT switch in GaAs PIN technology

In this paper we present the design and performance of millimeter wave MMIC switches in the patented MA-COM AlGaAs heterojunction PIN Diode process that allow us to produce high power and low insertion loss devices. The design process from a reflective SPDT switch to a non-reflective version of the switch, with intense use of HFSS and ADS software, is presented. These switches were designed to meet demanding requirements: low insertion loss less than 0.8 dB, 40dBm peak power and 37dBm CW power, and 30dB isolation.

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“…remarkable insertion loss is the best that is known for this type of switch [3]. As presented in Fig.…”

Section: Rf Bias Biasmentioning

confidence: 95%

Ka band high power AlGaAs PIN diode switches

Rozbicki

Brogle

Jain

et al. 2009

2009 IEEE MTT-S International Microwave Symposium Digest

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“…The P À1dB of the typical GaAs switch is relatively lower [4,5,6,7], which is not more than 29 dBm. In the practical application, the PIN switch [8] or GaN switch [9] is chosen to meet the phased array system requirement instead of GaAs switch. However, the PIN switch draws significant DC current and GaN switch is expensive.…”

Section: Introductionmentioning

confidence: 99%

Ku band 2 watt TR chip for phased array based on GaAs technology

Yuan

Yang

Chen

et al. 2016

IEICE Electron. Express

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A Ku-band transceiver chip (TR chip), which can be used for the phased array system, is presented in this paper. It includes a high power amplifier (HPA), a low noise amplifier (LNA) and two switches. The transmitting chain can provide over 2 watt (W) RF output power and 14 dB gain, meanwhile the receiving chain shows less than 3 dB noise figure and 25 dB gain in the frequency range of 15 to 17.5 GHz. A novel switch based on GaAs pHEMT process is also proposed, which can handle over 2 W RF output power without sacrificing the performance of the receiving chain. The size of the TR chip is 3 mm × 3 mm.

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Low reverse voltage Ku-Band 10W MMIC SPDT Tx/Rx switch using offset PIN diodes

Hamerman

Matarasso

Shapir

2009

2009 IEEE International Conference on Microwaves, Communications, Antennas and Electronics Systems

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In this paper we present the design and performance of a Ku-Band MMIC SPDT power switch utilizing low reverse voltage for the PIN diodes control, by placing diodes in a quarter wavelength distance from the main path. The isolation is better than 35dB, return loss better than 19dB at all states and insertion loss is about 0.5dB. The power handling capability exceeds 10W, while control signals are no higher then 5V for all states (i.e. Tx and Rx states). To our best knowledge, this is the first reported low reverse voltage switch to posses all of the above properties.

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Fully terminated Ka band high isolation, high power MMIC SPDT switch in GaAs PIN technology

Cited by 9 publications

References 6 publications

Ka band high power AlGaAs PIN diode switches

Ka band high power AlGaAs PIN diode switches

Ku band 2 watt TR chip for phased array based on GaAs technology

Low reverse voltage Ku-Band 10W MMIC SPDT Tx/Rx switch using offset PIN diodes

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