Low reverse voltage Ku-Band 10W MMIC SPDT Tx/Rx switch using offset PIN diodes

Abstract

In this paper we present the design and performance of a Ku-Band MMIC SPDT power switch utilizing low reverse voltage for the PIN diodes control, by placing diodes in a quarter wavelength distance from the main path. The isolation is better than 35dB, return loss better than 19dB at all states and insertion loss is about 0.5dB. The power handling capability exceeds 10W, while control signals are no higher then 5V for all states (i.e. Tx and Rx states). To our best knowledge, this is the first reported low reverse voltage switch to posses all of the above properties.

High power 3-bit GaN high-pass/low-pass phase shifter for X-band applications

“…The PIN diode phase shifter can handle high power up to 40 dBm, but it draws significant DC current when the diodes conduct. Although the GaAs FET phase shifter draw very low DC current, they have limited RF power handing capability which is about 25 dBm (Wu et al , 2007; Bob et al , 2008; Hamerman et al , 2009; Hangai et al , 2010). The significant progress made in the wide-band-gap semiconductor technology, specifically the Gallium Nitride (GaN) HEMT devices, offers the potential for a superior high power, high breakdown voltages (∼100 V) and high current densities (∼1.5 A/mm) (Robert, 2002).…”