In this paper we present the design and performance of millimeter wave MMIC switches in the patented MA-COM AlGaAs heterojunction PIN Diode process that allow us to produce high power and low insertion loss devices. The design process from a reflective SPDT switch to a non-reflective version of the switch, with intense use of HFSS and ADS software, is presented. These switches were designed to meet demanding requirements: low insertion loss less than 0.8 dB, 40dBm peak power and 37dBm CW power, and 30dB isolation.
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