Low-loss high-isolation 60-80 GHz GaAs SPST PIN switch

Efficient Modeling of PIN Diode Switches Employing Time-Domain Electromagnetic-Physics-Based Simulators

“…(7)- (10). The proposed simulator is validated by modeling the configuration provided in [9], where the switch is realized using the CPW configuration with a shunt SPST GaAs PIN diode. The airbridge is assumed to be 10 mm wide.…”

“…Figures [7] and [8] show comparison with measurements for the insertion loss for the forward and reverse bias cases. It is worth noting that since doping profile and other semiconductor parameters were not provided in [9], we had to use Eqs. (5) and (6) instead of driftdiffusion simulation only for validation and comparison with the measurements presented in [9].…”

“…It is worth noting that since doping profile and other semiconductor parameters were not provided in [9], we had to use Eqs. (5) and (6) instead of driftdiffusion simulation only for validation and comparison with the measurements presented in [9]. Considering Figs.…”

“…In our GaAs PIN diode case, m n and m p are 450 and 8000 cm 2 /Vs. On the other hand, under reverse bias, another approximation that is used instead of running a driftdiffusion simulator is to assume a constant depletion capacitance [9]: (6) Here e is the dielectric constant of the depletion layer material. In Fig.…”

A X-band SPDT Switch

“…A switch may receive an input signal at one terminal and a control signal. The switch may pass the input signal to the other terminal if it is turned on by the control signal and may block the input signal if it is turned off by the control signal [2] . Increasing needs for RF systems covering ultra wideband bands have been leading us to the development of the ultra wideband switch, switches is one of the most crucial components in RF systems.…”