Fully Integrated Switch-LNA Front-End IC Design in CMOS: A Systematic Approach for WLAN

Madan, Anuj; McPartlin, Mike; Zhou, Z.; Huang, C-W P.; Masse, C.; Cressler, John D.

doi:10.1109/jssc.2011.2166216

Cited by 13 publications

(2 citation statements)

References 19 publications

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“…Here, L s = 0.3 nH, L g = 3.1 nH and C g = 0.25 pF. It is notable that device cannot be sized too small due to the input P 1dB constraint [3]. There is a trade-off between DC power consumption and power handling performance.…”

Section: Circuit Designmentioning

confidence: 99%

“…As an essential part of the RF FEM, the receiver low-noise amplifier (LNA) generally integrates a single-pole double-throw (SPDT) switch for transmitting and receiving paths because the WLAN standards are time division duplex (TDD) communication systems [1,2]. Furthermore, to emerge short-range wireless communication markets, such as WLAN and Bluetooth, the feasibility of integrating a single-pole triple-throw (SP3T) switch into a front-end receiver has been pointed out for the 2.4-2.5 GHz frequency range [3,4].…”

Section: Introductionmentioning

confidence: 99%

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A 2.4-GHz Fully-Integrated GaAs pHEMT Front-End Receiver for WLAN and Bluetooth Applications

et al. 2022

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This paper describes a 2.4-GHz fully-integrated front-end receiver including a single-pole triple-throw (SP3T) switch and a low-noise amplifier (LNA) with bypass function, which was fabricated in a 0.25 μm GaAs pHEMT process. An asymmetrical SP3T switch architecture is incorporated to enable the receiver to operate in four modes. The exploration of impedance and voltage gain behavior of the proposed LNA help to establish the matching network and alleviate the trade-off between noise figure (NF) and gain performance. In LNA high gain mode, the implemented front-end receiver shows 1.7 dB of NF and 6dBm of input third-order intercept point (IIP3) with 20 dB of power gain drawing 11 mA of current from 5 V power supply at 2.4 GHz. All input and output return loss had exceeded 10 dB with fully on-chip impedance matching network. In bypass mode, the measured insertion loss of typically 7.5 dB is achieved.

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Section: Circuit Designmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

A 2.4-GHz Fully-Integrated GaAs pHEMT Front-End Receiver for WLAN and Bluetooth Applications

et al. 2022

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Design of Transmit/Receive Switches in CMOS

Zhang

2012

Wiley Encyclopedia of Electrical and Electronics Engineering

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In this chapter, a concise comparison of wireless communication technologies was provided, from which we noticed that time‐division duplexing ( TDD ) is becoming popular and operating frequency continues increasing. We focused our discussion on an important block, i.e., transmit/receive switch (T/R switch) in a TDD‐based radio front‐end. The discussion started with different categories of T/R switch topologies, followed by device models, and then various design techniques. In particular, we looked at techniques including optimizing device dimensions, maximizing/minimizing substrate resistance, body‐floating, transistor stacking, stepped impedance, and traveling wave concept. Besides a detailed summary on proposed design techniques, recommendation on future work was also provided. Continued innovations and novel ideas on design techniques may provide a comprehensive CMOS solution to the challenges of design of T/R switches for mobile cellular and radio systems operating at 60‐GHz or even high frequencies.

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WLAN Receiver Front End

Rawlins¹

2021

Low Power Wireless Receivers for IoT Applications With Multi-Band Calibration Algorithms

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Fully Integrated Switch-LNA Front-End IC Design in CMOS: A Systematic Approach for WLAN

Cited by 13 publications

References 19 publications

A 2.4-GHz Fully-Integrated GaAs pHEMT Front-End Receiver for WLAN and Bluetooth Applications

A 2.4-GHz Fully-Integrated GaAs pHEMT Front-End Receiver for WLAN and Bluetooth Applications

Design of Transmit/Receive Switches in CMOS

WLAN Receiver Front End

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